MBE Growth of GaAs on Si: Problems and Progress

1986 ◽  
Vol 67 ◽  
Author(s):  
Herbert Kroemer
Keyword(s):  
Buffer Layers ◽  
Misfit Dislocations ◽  
Extensive Discussion ◽  
Mbe Growth ◽  
Gaas On Si ◽  
Interface Charge

ABSTRACTSeveral fundamental problems are reviewed that must be solved if GaAs on Si growth is to be achieved with device-quality already close to the GaAs/Si interface, rather than relying on thick buffer layers: (a) antiphase disorder, (b) interface charge and cross-doping, and (c) misfit dislocations. An extensive discussion is given of the mechanism by which antiphase disorder is suppressed on (100)-oriented substrates

Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si

1991 ◽  
Vol 115 (1-4) ◽  
pp. 122-127 ◽  
Author(s):  
W.Y. Uen ◽  
S. Sakawa ◽  
T. Nishinaga
Keyword(s):  
Comparative Study ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Gaas On Si

Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

1995 ◽  
Vol 379 ◽  
Author(s):  
Christos Papavassiliou ◽  
G. Constantinidis ◽  
N. Kornilios ◽  
A. Georgakilas ◽  
E. LÖchterman ◽  
...  
Keyword(s):  
Misorientation Angle ◽  
Defect Density ◽  
Initial Study ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Gaas On Si ◽  
Dc Characteristics

ABSTRACTA systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

MBE Growth of Low Dislocation and High Mobility GaAs-on-Si

1986 ◽  
Vol 67 ◽  
Author(s):  
Jhang Woo Lee
Keyword(s):  
Layer Structure ◽  
High Mobility ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Molecular Beam Epitaxial Growth

ABSTRACTData is presented on the optimization of several molecular beam epitaxial growth processes to provide low dislocation density and high mobility GaAs single crystals on (100) Si wafers. The substrate tilt angle, the growth temperature, and the first buffer layer structure, were investigated Tor this purpose. Using Hall measurements the GaAs layers grown on 2 or 3-degree tilt (100) Si showed consistently high mobilities which are equivalent to the homoepitaxial GaAs mobility. Transmission electron microscopy (TEM) revealed that on tilted (100) Si substrates most of the misfit dislocations were confined within the first 50 Å GaAs layer by forming a type of edge dislocation at the Si surface step edges. Also low temperature grown buffer layers always gave better morphologies and lower etch pit densities while keeping the high mobilities on overgrown GaAs layers.

Investigation of Si-substrate preparation for GaAs-on-Si MBE growth

1996 ◽  
pp. 300-303
Author(s):  
M. Kayambaki ◽  
R. Callec ◽  
G. Constantinidis ◽  
Ch. Papavassiliou ◽  
E. Löchtermann ◽  
...  
Keyword(s):  
Si Substrate ◽  
Substrate Preparation ◽  
Mbe Growth ◽  
Gaas On Si

Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

1993 ◽  
Vol 40 (3) ◽  
pp. 507-512 ◽  
Author(s):  
A. Georgakilas ◽  
G. Halkias ◽  
A. Christou ◽  
C. Papavassiliou ◽  
G. Perantinos ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Gaas On Si
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