Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
K. Masri ◽  
J. P. Boyeaux ◽  
S. N. Kumar ◽  
L. Mayet ◽  
A. Laugier
Keyword(s):  
Grain Boundary ◽  
Light Beam ◽  
High Performance ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
A Value ◽  
Recombination Velocity ◽  
P Type

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

Gettering of Dissolved and Segregated Impurities in Multicrystalline Silicon Wafers

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Stemmer ◽  
I. Perichaud ◽  
S. MartiNuzzi
Keyword(s):  
Grain Boundaries ◽  
Light Beam ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Extended Defects ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
Cast Ingot ◽  
Crystallographic Defects ◽  
Homogeneous Regions

ABSTRACTPhosphorus gettering by diffusion from a POCl3 source was applied to matched wafers cut out of the same region of a cast ingot. Light Beam Induced Current mappings with wavelengths in the range between 840 and 980 nm lead to follow the variation of minority carrier diffusion length after gettering at 900°C for 120 and 240 mn, especially near extended crystallographic defects like dislocations and grain boundaries.The mappings show that after the gettering treatments, the local values of L increase due to the reduction of the recombination strength of extended defects and to the improvement of the homogeneous regions of the grains.As SIMS analyses indicate that Fe, Cu and Ni atoms are gettered, it is reasonable to assume that these impurities were initially dissolved in the grains and also segregated at the extended defects.

Silicon Films Deposited by LPE on Low Cost Multicrystalline Silicon Substrates

1996 ◽  
Vol 426 ◽  
Author(s):  
M. Stemmer ◽  
G. Wagner ◽  
S. Martinuzzi
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Low Cost ◽  
Multicrystalline Silicon ◽  
Silicon Substrates ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
Photovoltaic Applications ◽  
Crystallographic Defects ◽  
P Type

AbstractP type silicon layers for photovoltaic applications have been deposited on low cost multicrystalline silicon substrates prepared by directional solidification or by electromagnetic casting with solar grade charges. The thickness is between 4 to 20 μm. The layers were characterized by Light Beam Induced Current (LBIC) mappings at different wavelengthes. Collecting structures are p-n junctions or Al-Si semitransparent diodes. The layer and the substrate can be investigated separately by changing the wavelength of the LBIC maps, or/and by realizing a collecting structure on the free surface of the substrate.It is found that the same extended crystallographic defects are detected by LBIC in the layer and in the substrate. However their recombination strength in the layer is less marked probably due to a higher purity of the layer. The computed values of minority carrier diffusion length are close or larger than the film thickness and the investigated layers could be used to make solar cells.

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

2017 ◽  
Vol 122 (11) ◽  
pp. 115702 ◽  
Author(s):  
M. Niemeyer ◽  
J. Ohlmann ◽  
A. W. Walker ◽  
P. Kleinschmidt ◽  
R. Lang ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
P Type
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