Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates

1994 ◽  
Vol 356 ◽  
Author(s):  
Timothy E. Levine ◽  
Michael Nastasi ◽  
T. L. Alford ◽  
Carlos Suchicital ◽  
Stephen Russell ◽  
...  
Keyword(s):  
Free Surface ◽  
Mass Spectroscopy ◽  
Ion Irradiation ◽  
Metal Layer ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Secondary Ion Mass Spectroscopy ◽  
Film Substrate ◽  
Secondary Ion

AbstractThe mixing of titanium overlayers with hydroxyapatite (HA) substrates via ion irradiation has been demonstrated. Analysis via secondary ion mass spectroscopy (SIMS) indicates an interfacial broadening of titanium and calcium of the implanted sample compared to that of the unimplanted sample. Attendant to the observed ion beam mixing of titanium into the HA, the oxygen signal of the titanium overlayer increases as a result of ion irradiation. It is supposed that this change is evident of diffusion through the metal layer and possibly from titania formation at the free surface and perovskite formation at the film/substrate interface. This possibility is consistent with thermodynamic predictions. Additionally, the force required to separate the film from the substrate increased as a result of ion irradiation, validating the continued study of ion beam processing of Ti/HA systems towards the improvement of long term fixation of implant devices.

scholarly journals Secondary ion mass spectroscopy of TiN thin films obtained by ion beam mixing.

Shinku ◽  
1987 ◽  
Vol 30 (5) ◽  
pp. 310-313
Author(s):  
Ichiro TAKANO ◽  
Masahiro ISHIDA ◽  
Tomo BABA ◽  
Masakatsu TAKEMOTO ◽  
Shoji ISOBE
Keyword(s):  
Thin Films ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Secondary Ion Mass Spectroscopy ◽  
Tin Thin Films ◽  
Secondary Ion

Temperature Dependence of Ion Beam Mixing of Ingaas Marker Layers in GaAs

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Forbes ◽  
J.J. Coleman ◽  
J.J. Klatt ◽  
R.R. Averback
Keyword(s):  
Temperature Dependence ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Gaas Matrix ◽  
Similar Temperature Dependence ◽  
Mixing Parameter ◽  
Similar Temperature ◽  
Secondary Ion

ABSTRACTIon beam mixing of In0.20Ga0.80As quantum well marker layers in GaAs following 1 MeV Kr ion irradiation has been measured as a function of irradiation temperature and fluence. Secondary Ion Mass Spectrometry (SIMS) was used to measure the diffusion of the In0.20Ga0.80As layer following irradiation at various temperatures. Rutherford Backscattering (RBS) and channeling methods were used to determine the extent of the amorphization as a result of the implantation. The mixing parameter of the In0.20Ga0.80As in the GaAs matrix increased from σ120 Å5/eV at 77K to σ160Å5/eV in the temperature range of 300K–450K, but decreased somewhat at 573K. This behavior of In0.20Ga0.80As marker layers will be compared to AlAs marker layers which show similar temperature dependence. These results are interpreted on the basis of thermal spikes and crystal structure.

Time-of-flight secondary ion mass spectroscopy for surface analysis of insulators using a cluster ion beam

2003 ◽  
Vol 83 (23) ◽  
pp. 4872-4874 ◽  
Author(s):  
K. Hirata ◽  
Y. Saitoh ◽  
A. Chiba ◽  
K. Narumi ◽  
Y. Kobayashi ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Time Of Flight ◽  
Secondary Ion Mass Spectroscopy ◽  
Cluster Ion ◽  
Secondary Ion
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