A focused ion beam secondary ion mass spectroscopy system

1995 ◽  
Vol 13 (6) ◽  
pp. 2607 ◽  
Author(s):  
G. A. Crow
Keyword(s):  
Mass Spectroscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Secondary Ion Mass Spectroscopy ◽  
Spectroscopy System ◽  
Secondary Ion

scholarly journals Secondary ion mass spectroscopy of TiN thin films obtained by ion beam mixing.

Shinku ◽  
1987 ◽  
Vol 30 (5) ◽  
pp. 310-313
Author(s):  
Ichiro TAKANO ◽  
Masahiro ISHIDA ◽  
Tomo BABA ◽  
Masakatsu TAKEMOTO ◽  
Shoji ISOBE
Keyword(s):  
Thin Films ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Secondary Ion Mass Spectroscopy ◽  
Tin Thin Films ◽  
Secondary Ion

Time-of-flight secondary ion mass spectroscopy for surface analysis of insulators using a cluster ion beam

2003 ◽  
Vol 83 (23) ◽  
pp. 4872-4874 ◽  
Author(s):  
K. Hirata ◽  
Y. Saitoh ◽  
A. Chiba ◽  
K. Narumi ◽  
Y. Kobayashi ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Time Of Flight ◽  
Secondary Ion Mass Spectroscopy ◽  
Cluster Ion ◽  
Secondary Ion

Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates

1994 ◽  
Vol 356 ◽  
Author(s):  
Timothy E. Levine ◽  
Michael Nastasi ◽  
T. L. Alford ◽  
Carlos Suchicital ◽  
Stephen Russell ◽  
...  
Keyword(s):  
Free Surface ◽  
Mass Spectroscopy ◽  
Ion Irradiation ◽  
Metal Layer ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Secondary Ion Mass Spectroscopy ◽  
Film Substrate ◽  
Secondary Ion

AbstractThe mixing of titanium overlayers with hydroxyapatite (HA) substrates via ion irradiation has been demonstrated. Analysis via secondary ion mass spectroscopy (SIMS) indicates an interfacial broadening of titanium and calcium of the implanted sample compared to that of the unimplanted sample. Attendant to the observed ion beam mixing of titanium into the HA, the oxygen signal of the titanium overlayer increases as a result of ion irradiation. It is supposed that this change is evident of diffusion through the metal layer and possibly from titania formation at the free surface and perovskite formation at the film/substrate interface. This possibility is consistent with thermodynamic predictions. Additionally, the force required to separate the film from the substrate increased as a result of ion irradiation, validating the continued study of ion beam processing of Ti/HA systems towards the improvement of long term fixation of implant devices.

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