Long term reproducibility of secondary ion mass spectroscopy measurements in silicon

1996 ◽  
Vol 14 (5) ◽  
pp. 3321 ◽  
Author(s):  
Paul K. Chu
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates

1994 ◽  
Vol 356 ◽  
Author(s):  
Timothy E. Levine ◽  
Michael Nastasi ◽  
T. L. Alford ◽  
Carlos Suchicital ◽  
Stephen Russell ◽  
...  
Keyword(s):  
Free Surface ◽  
Mass Spectroscopy ◽  
Ion Irradiation ◽  
Metal Layer ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Secondary Ion Mass Spectroscopy ◽  
Film Substrate ◽  
Secondary Ion

AbstractThe mixing of titanium overlayers with hydroxyapatite (HA) substrates via ion irradiation has been demonstrated. Analysis via secondary ion mass spectroscopy (SIMS) indicates an interfacial broadening of titanium and calcium of the implanted sample compared to that of the unimplanted sample. Attendant to the observed ion beam mixing of titanium into the HA, the oxygen signal of the titanium overlayer increases as a result of ion irradiation. It is supposed that this change is evident of diffusion through the metal layer and possibly from titania formation at the free surface and perovskite formation at the film/substrate interface. This possibility is consistent with thermodynamic predictions. Additionally, the force required to separate the film from the substrate increased as a result of ion irradiation, validating the continued study of ion beam processing of Ti/HA systems towards the improvement of long term fixation of implant devices.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
Nobuaki Takahashi ◽  
Teruyasu Mizoguchi ◽  
Tsubasa Nakagawa ◽  
Tetsuya Tohei ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
First Principles ◽  
Secondary Ion Mass Spectroscopy ◽  
First Principles Study ◽  
Secondary Ion
Sign in / Sign up

Export Citation Format

Share Document