Use of an SF[sub 5][sup +] polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument

Greg Gillen; Marlon Walker; Phillip Thompson; Joe Bennett

doi:10.1116/1.591221

Use of an SF[sub 5][sup +] polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591221 ◽

2000 ◽

Vol 18 (1) ◽

pp. 503 ◽

Cited By ~ 38

Author(s):

Greg Gillen ◽

Marlon Walker ◽

Phillip Thompson ◽

Joe Bennett

Keyword(s):

Mass Spectroscopy ◽

Ion Beam ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

Journal of The Electrochemical Society ◽

10.1149/1.1362550 ◽

2001 ◽

Vol 148 (5) ◽

pp. F92 ◽

Cited By ~ 2

Author(s):

A. A. Efremov ◽

V. G. Litovchenko ◽

G. Ph. Romanova ◽

A. V. Sarikov ◽

C. Claeys

Keyword(s):

Computer Simulations ◽

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Buried Oxide ◽

Secondary Ion

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Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1−xGex/Si heterojunction bipolar transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588463 ◽

1996 ◽

Vol 14 (1) ◽

pp. 287 ◽

Cited By ~ 5

Author(s):

D. Krüger

Keyword(s):

Mass Spectroscopy ◽

Heterojunction Bipolar Transistors ◽

Depth Profiling ◽

Bipolar Transistors ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1634957 ◽

2004 ◽

Vol 22 (1) ◽

pp. 341 ◽

Cited By ~ 3

Author(s):

E. de Chambost ◽

A. Merkulov ◽

M. Schuhmacher ◽

P. Peres

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300

Vacuum ◽

10.1016/0042-207x(91)91191-p ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 592

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Primary Beam ◽

Secondary Ion Mass Spectroscopy ◽

Shallow Junctions ◽

Secondary Ion

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High-Throughput Screening of Si–Ni Flux for SiC Solution Growth Using a High-Temperature Laser Microscope Observation and Secondary Ion Mass Spectroscopy Depth Profiling

ACS Combinatorial Science ◽

10.1021/co400009z ◽

2013 ◽

Vol 15 (6) ◽

pp. 287-290 ◽

Cited By ~ 5

Author(s):

Shingo Maruyama ◽

Aomi Onuma ◽

Kazuhisa Kurashige ◽

Tomohisa Kato ◽

Hajime Okumura ◽

...

Keyword(s):

High Temperature ◽

Mass Spectroscopy ◽

High Throughput ◽

High Throughput Screening ◽

Depth Profiling ◽

Microscope Observation ◽

Solution Growth ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC

Applied Physics Letters ◽

10.1063/1.4958144 ◽

2016 ◽

Vol 109 (1) ◽

pp. 011904 ◽

Cited By ~ 20

Author(s):

Paweł Piotr Michałowski ◽

Wawrzyniec Kaszub ◽

Alexandre Merkulov ◽

Włodek Strupiński

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589797 ◽

1998 ◽

Vol 16 (1) ◽

pp. 292 ◽

Cited By ~ 8

Author(s):

D. Krüger

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Adhesion enhancement of magnetron-sputtered copper films by ion bombardment etching treatment of nickel and Inconel substrates: investigations by Auger electron spectroscopy and secondary ion mass spectroscopy of the ion beam effects

Journal of Adhesion Science and Technology ◽

10.1163/156856191x00891 ◽

1991 ◽

Vol 5 (11) ◽

pp. 987-999 ◽

Cited By ~ 5

Author(s):

M. Cahoreau ◽

G.H. Lee ◽

J. Caisso ◽

M. Cailler

Keyword(s):

Auger Electron Spectroscopy ◽

Mass Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Ion Beam ◽

Ion Bombardment ◽

Copper Films ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Optimized time-of-flight secondary ion mass spectroscopy depth profiling with a dual beam technique

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580874 ◽

1997 ◽

Vol 15 (3) ◽

pp. 460-464 ◽

Cited By ~ 99

Author(s):

K. Iltgen ◽

C. Bendel ◽

A. Benninghoven ◽

E. Niehuis

Keyword(s):

Mass Spectroscopy ◽

Time Of Flight ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Dual Beam ◽

Secondary Ion ◽

Beam Technique

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Focused ion beam time-of-flight secondary ion mass spectroscopy tomography of through-silicon vias for 3D integration

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4947463 ◽

2016 ◽

Vol 34 (3) ◽

pp. 03H137 ◽

Cited By ~ 2

Author(s):

Jean-Paul Barnes ◽

Larissa Djomeni ◽

Stéphane Minoret ◽

Thierry Mourier ◽

Jean-Marc Fabbri ◽

...

Keyword(s):

Mass Spectroscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Time Of Flight ◽

3D Integration ◽

Through Silicon Vias ◽

Secondary Ion Mass Spectroscopy ◽

Silicon Vias ◽

Secondary Ion

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