Temperature Dependence of Ion Beam Mixing of Ingaas Marker Layers in GaAs

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Forbes ◽  
J.J. Coleman ◽  
J.J. Klatt ◽  
R.R. Averback
Keyword(s):  
Temperature Dependence ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Gaas Matrix ◽  
Similar Temperature Dependence ◽  
Mixing Parameter ◽  
Similar Temperature ◽  
Secondary Ion

ABSTRACTIon beam mixing of In0.20Ga0.80As quantum well marker layers in GaAs following 1 MeV Kr ion irradiation has been measured as a function of irradiation temperature and fluence. Secondary Ion Mass Spectrometry (SIMS) was used to measure the diffusion of the In0.20Ga0.80As layer following irradiation at various temperatures. Rutherford Backscattering (RBS) and channeling methods were used to determine the extent of the amorphization as a result of the implantation. The mixing parameter of the In0.20Ga0.80As in the GaAs matrix increased from σ120 Å5/eV at 77K to σ160Å5/eV in the temperature range of 300K–450K, but decreased somewhat at 573K. This behavior of In0.20Ga0.80As marker layers will be compared to AlAs marker layers which show similar temperature dependence. These results are interpreted on the basis of thermal spikes and crystal structure.

Ion beam processing of LiNbO3

1986 ◽  
Vol 1 (1) ◽  
pp. 104-113 ◽  
Author(s):  
B. R. Appleton ◽  
G. M. Beardsley ◽  
G. C. Farlow ◽  
W. H. Christie ◽  
P. R. Ashley
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Scattering ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Alternative Techniques ◽  
Surface Decomposition ◽  
Secondary Ion

Ion implantation and ion beam mixing have been investigated as alternative techniques to hightemperature diffusion for introducing dopants into LiNbO3. Heavy ion bombardment at both 77 and 300 K initiated a near-surface decomposition causing Li to diffuse to the surface where it formed a nonuniform agglomerate. The damage and annealing characteristics of this effect were studied by ion scattering/channeling, secondary ion mass spectrometry, and optical microscopy. The origins of the surface decomposition are discussed along with possible solutions, and selected samples were evaluated for waveguide properties.

Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates

1994 ◽  
Vol 356 ◽  
Author(s):  
Timothy E. Levine ◽  
Michael Nastasi ◽  
T. L. Alford ◽  
Carlos Suchicital ◽  
Stephen Russell ◽  
...  
Keyword(s):  
Free Surface ◽  
Mass Spectroscopy ◽  
Ion Irradiation ◽  
Metal Layer ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Secondary Ion Mass Spectroscopy ◽  
Film Substrate ◽  
Secondary Ion

AbstractThe mixing of titanium overlayers with hydroxyapatite (HA) substrates via ion irradiation has been demonstrated. Analysis via secondary ion mass spectroscopy (SIMS) indicates an interfacial broadening of titanium and calcium of the implanted sample compared to that of the unimplanted sample. Attendant to the observed ion beam mixing of titanium into the HA, the oxygen signal of the titanium overlayer increases as a result of ion irradiation. It is supposed that this change is evident of diffusion through the metal layer and possibly from titania formation at the free surface and perovskite formation at the film/substrate interface. This possibility is consistent with thermodynamic predictions. Additionally, the force required to separate the film from the substrate increased as a result of ion irradiation, validating the continued study of ion beam processing of Ti/HA systems towards the improvement of long term fixation of implant devices.

Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

2012 ◽  
Vol 167 (7) ◽  
pp. 506-511 ◽  
Author(s):  
G. Devaraju ◽  
S. V.S. Nageswara Rao ◽  
N. Srinivasa Rao ◽  
V. Saikiran ◽  
T. K. Chan ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Mixing Effects ◽  
Swift Heavy Ion ◽  
Lattice Matched

Metal cluster complex primary ion beam source for secondary ion mass spectrometry (SIMS)

Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 544-549 ◽  
Author(s):  
Yukio Fujiwara ◽  
Kouji Watanabe ◽  
Hidehiko Nonaka ◽  
Naoaki Saito ◽  
Atsushi Suzuki ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Cluster ◽  
Ion Beam ◽  
Cluster Complex ◽  
Beam Source ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Helium ion microscope – secondary ion mass spectrometry for geological materials

2020 ◽  
Vol 11 ◽  
pp. 1504-1515
Author(s):  
Matthew R Ball ◽  
Richard J M Taylor ◽  
Joshua F Einsle ◽  
Fouzia Khanom ◽  
Christelle Guillermier ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Isotopic Analysis ◽  
Green Economy ◽  
Case Scenario ◽  
Helium Ion ◽  
Ion Mass Spectrometry ◽  
Focussed Ion Beam ◽  
Secondary Ion

The helium ion microscope (HIM) is a focussed ion beam instrument with unprecedented spatial resolution for secondary electron imaging but has traditionally lacked microanalytical capabilities. With the addition of the secondary ion mass spectrometry (SIMS) attachment, the capabilities of the instrument have expanded to microanalysis of isotopes from Li up to hundreds of atomic mass units, effectively opening up the analysis of all natural and geological systems. However, the instrument has thus far been underutilised by the geosciences community, due in no small part to a lack of a thorough understanding of the quantitative capabilities of the instrument. Li represents an ideal element for an exploration of the instrument as a tool for geological samples, due to its importance for economic geology and a green economy, and the difficult nature of observing Li with traditional microanalytical techniques. Also Li represents a “best-case” scenario for isotopic measurements. Here we present details of sample preparation, instrument sensitivity, theoretical, and measured detection limits for both elemental and isotopic analysis as well as practicalities for geological sample analyses of Li alongside a discussion of potential geological use cases of the HIM–SIMS instrument.

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

1993 ◽  
Vol 63 (7) ◽  
pp. 976-978 ◽  
Author(s):  
J. L. Klatt ◽  
R. S. Averback ◽  
D. V. Forbes ◽  
J. J. Coleman
Keyword(s):  
Temperature Dependence ◽  
Ion Beam ◽  
Ion Beam Mixing
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