Boron Enhanced Diffusion Due to High Energy Ion-Implantation and Its Suppression by Using RTA Process

1994 ◽  
Vol 354 ◽  
Author(s):  
Atsuki ONO ◽  
Hitoshi ABIKO ◽  
Isarai SAKAI
Keyword(s):  
Anomalous Diffusion ◽  
High Energy ◽  
Device Fabrication ◽  
Systematic Analysis ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Initial Stage ◽  
Boron Implantation ◽  
Shallow Channel

AbstractSIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of ∼2E13cm-2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700∼800°C annealing, and it takes place in the initial stage (less than 30sec for 800°C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1000-1100°C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

Boron Implantation into Silicon Subject to Hydrogen Plasma

2000 ◽  
Vol 610 ◽  
Author(s):  
Sanjay Rangan ◽  
Mark Horn ◽  
S. Ashok
Keyword(s):  
Defect Density ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Anneal Temperature

AbstractAlleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

A Simple Model for the Transient, Enhanced Diffusion of Ion-Implanted Phosphorus in Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
F. F. Morehead ◽  
R.T. Hodgson
Keyword(s):  
Simple Model ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Large Movement ◽  
Mobile Component ◽  
Phosphorus In Silicon ◽  
P Distribution ◽  
Total P ◽  
Si Wafer

ABSTRACTUnlike As, B as well as P implanted into Si exhibits transient, enhanced diffusion. For example, when P implants are annealed for times of ~1 s at temperatures > 900°C, we observe a large movement of dopant toward the furnace of the Si wafer which is nearly independent of temperature 1050-1200°C. Once the temperature rises above 1200-1250°C the diffusion is similar to that normally observed. We model the experimental results as a transient, enhanced diffusion of a mobile component, about half the total phosphorus implant, distributed deeper in the bulk than the total P distribution. This mobile component may be linked to a large super-saturation of self-interstitials produced by the 50 keV implantation, which are expected to be left deeper in the bulk than the total dopant profile.

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Effect of Recoil Implantation of Oxygen on Boron Enhanced Diffusion in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
D. Fan ◽  
R. J. Jaccodine
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Device Fabrication ◽  
Boron Diffusion ◽  
Spreading Resistance ◽  
Recoil Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented.

The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Wong-Leung ◽  
J. S. Williams ◽  
M. Petravić
Keyword(s):  
Point Defects ◽  
Subsequent Annealing ◽  
High Flux ◽  
Cavity Formation ◽  
Enhanced Diffusion ◽  
Metal Impurities ◽  
Transient Enhanced Diffusion ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Observed Behaviour

ABSTRACTCavities, formed in Si by hydrogen implantation and subsequent annealing, can provide ideal gettering sites for metal impurities. In this study, we have observed large differences in the accumulation of Cu at cavities depending on whether Cu was introduced into Si during cavity formation or into wafers with pre-formed cavities. The observed behaviour is consistent with a high flux of Si interstitials emitted during cavity formation which induce the dissolution of Cu3Si and the enhanced transport of Cu to cavities. In further studies, boron implantation was carried out into wafers containing pre-formed cavities and transient enhanced diffusion (TED) of boron was suppressed duringsubsequent annealing.

Transient Enhanced Diffusion of Arsenic by Self-Implantation —The role of As-I clusters—

2000 ◽  
Vol 610 ◽  
Author(s):  
Ryangsu Kim ◽  
Takenori Aoki ◽  
Yoshikazu Furuta ◽  
Hiroyuki Kobyashi ◽  
Jianxin Xia ◽  
...  
Keyword(s):  
Implantation Dose ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Initial Stage ◽  
Interstitial Atoms ◽  
Conventional Models ◽  
Silicon Implantation

AbstractTransient enhanced diffusion of implanted arsenic in silicon with/without additional self-implantation has been investigated. The experimental results show the suppression of As diffusion with Si self-implantation during initial stage of annealing in contrast to the prediction of conventional models. The results suggest that the arsenic and self-interstitial atoms might form immobile clusters during Si implantation or initial stage of annealing. After the clusters dissolve for further annealing, the transient enhanced diffusion of As increases with silicon implantation dose as expected from the “+1” model. These results clarify that interstitials/ As-I clusters play a major role in transient arsenic diffusion.

Mechanisms for Interstitial-Mediated Transient Enhanced Diffusion of N-type Dopants

2006 ◽  
Vol 912 ◽  
Author(s):  
Scott Anthony Harrison ◽  
Thomas F. Edgar ◽  
Gyeong S. Hwang
Keyword(s):  
Density Functional ◽  
Negative Charge ◽  
High Energy ◽  
Major Barrier ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Scale Down ◽  
P Diffusion ◽  
Heavily Doped ◽  
Silicon Transistor

AbstractAs silicon transistor dimensions scale down, transient enhanced diffusion of n-type dopants has become a major barrier toward achieving required junction depths for transistors. In this paper, we use density functional calculations to identify a pathway by which silicon interstitials can mediate As and P diffusion. We show that As-silicon interstitial and P-silicon interstitial pairs in the neutral and negative charge states diffuse via a mechanism in which the dopant is bond-centered at energy minima and threefold coordinated at the high energy saddle point during dopant migration. For both As-silicon interstitial and P-silicon interstitial pairs, we conclude that the neutral pairs will dominate under intrinsic conditions while the neutral and negatively charged pairs will both contribute under heavily doped extrinsic conditions.

Experimental Investigation of Transient Enhanced Diffusion (TED) of Phosphorus Implants in Silicon in the MeV Range

1997 ◽  
Vol 469 ◽  
Author(s):  
Lahir S. Adam ◽  
Mark E. Law
Keyword(s):  
Experimental Investigation ◽  
High Energy ◽  
Low Energy ◽  
Prior Work ◽  
Enhanced Diffusion ◽  
Energy Regime ◽  
Transient Enhanced Diffusion ◽  
Per Se ◽  
High Energy Regime

ABSTRACTTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Prior work has concentrated on TED resulting from sub 200 KeV implants. However, the results applicable to the low energy regime cannot be extrapolated per se into the high energy regime. Furnace anneals have been performed and through simulations it has been observed that there is a differential diffusivity enhancement between the part of the profile before the profile peak and that beyond the profile peak. Longer saturation times compared to the low energy implants have also been observed.

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