The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Wong-Leung ◽  
J. S. Williams ◽  
M. Petravić
Keyword(s):  
Point Defects ◽  
Subsequent Annealing ◽  
High Flux ◽  
Cavity Formation ◽  
Enhanced Diffusion ◽  
Metal Impurities ◽  
Transient Enhanced Diffusion ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Observed Behaviour

ABSTRACTCavities, formed in Si by hydrogen implantation and subsequent annealing, can provide ideal gettering sites for metal impurities. In this study, we have observed large differences in the accumulation of Cu at cavities depending on whether Cu was introduced into Si during cavity formation or into wafers with pre-formed cavities. The observed behaviour is consistent with a high flux of Si interstitials emitted during cavity formation which induce the dissolution of Cu3Si and the enhanced transport of Cu to cavities. In further studies, boron implantation was carried out into wafers containing pre-formed cavities and transient enhanced diffusion (TED) of boron was suppressed duringsubsequent annealing.

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Boron Enhanced Diffusion Due to High Energy Ion-Implantation and Its Suppression by Using RTA Process

1994 ◽  
Vol 354 ◽  
Author(s):  
Atsuki ONO ◽  
Hitoshi ABIKO ◽  
Isarai SAKAI
Keyword(s):  
Anomalous Diffusion ◽  
High Energy ◽  
Device Fabrication ◽  
Systematic Analysis ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Initial Stage ◽  
Boron Implantation ◽  
Shallow Channel

AbstractSIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of ∼2E13cm-2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700∼800°C annealing, and it takes place in the initial stage (less than 30sec for 800°C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1000-1100°C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

Boron Implantation into Silicon Subject to Hydrogen Plasma

2000 ◽  
Vol 610 ◽  
Author(s):  
Sanjay Rangan ◽  
Mark Horn ◽  
S. Ashok
Keyword(s):  
Defect Density ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Anneal Temperature

AbstractAlleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Heat Treatment ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Dependent ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transient Enhanced Diffusion ◽  
And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation

2002 ◽  
Vol 719 ◽  
Author(s):  
Yutaka Tokuda ◽  
Hiroyuki Iwata
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects ◽  
Partial Annealing

AbstractHydrogen implantation has been used to anneal defects produced in p-type silicon by boron implantation. Boron implantation is performed with an energy of 300 keV to a dose of 1×109 cm-2. Deep level transient spectroscopy measurements show the production of four hole traps (Ev + 0.21, 0.35, 0.50, 0.55 eV) by boron implantation. Subsequent hydrogen implantation is performed with energies of 60, 90, 120 and 150 keV to a dose of 2×1010 cm-2. Among four traps produced by boron implantation, the most significant effect of hydrogen implantation is observed on one trap (Ev + 0.50 eV). A 62% decrease in concentration is caused for this trap by hydrogen implantation with energies of 120 and 150 keV. This partial annealing is ascribed to the reaction of boron-implantation-induced defects with point defects produced by hydrogen implantation.

Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Mark E. Law ◽  
Michelle D. Griglione ◽  
Misty Northridge
Keyword(s):  
Binding Energy ◽  
Carbon Atom ◽  
Ab Initio ◽  
Point Defects ◽  
Initial Conditions ◽  
Carbon Diffusion ◽  
Reaction Rates ◽  
Interstitial Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

AbstractCarbon is a native impurity in Si which is known to trap self-interstitials and decrease their diffusivity. Carbon has also been observed to decrease B transient enhanced diffusion (TED) in Si through these interstitial interactions. Recently it has been proposed that vacancies must also be considered when accounting for the reduction of B TED. We have incorporated both the kick-out mechanism and the Frank-Turnbull (F-T) mechanism in simulations of interstitial diffusion and carbon diffusion, as well as experiments involving B diffusion in B doped superlattices (DSLs) with varying C concentration regions. We have used the binding energy between a carbon atom and a self-interstitial as a basis for the reaction rates for both mechanisms, and have found that an single energy of 2.25 eV best reproduces the results from several experiments, assuming equilibrium initial conditions for both mechanisms and ab-initio equilibrium values for all point defects.

The Importance Of Pairing Reactions For The Modeling Of Defect-Dopant Interactions In Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
I. Bork ◽  
A. v. Schwerin ◽  
Siemens AG
Keyword(s):  
Low Temperature ◽  
Significant Role ◽  
Point Defects ◽  
Local Equilibrium ◽  
Diffusion Models ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Temperature Transient ◽  
Transient Enhanced Diffusion ◽  
Good Agreement

ABSTRACTIn this article it is shown that the reactions between dopants and point defects in silicon are slow enough to play a significant role for low temperature transient enhanced diffusion (TED). As a consequence, diffusion models based on the assumption of local equilibrium between dopants and dopant-defect pairs highly overestimate TED at temperatures below 800°C. Without this assumption, i.e. when full dynamic pairing of dopants is included in simulations, good agreement to experimental results is achieved.

Surfaces and Interfaces for Controlled Defect Engineering

2008 ◽  
Vol 1070 ◽  
Author(s):  
Edmund G. Seebauer
Keyword(s):  
Integrated Circuits ◽  
Point Defects ◽  
Chemical State ◽  
Defect Engineering ◽  
Dopant Activation ◽  
Enhanced Diffusion ◽  
Surfaces And Interfaces ◽  
Transient Enhanced Diffusion ◽  
Ultrashallow Junction

ABSTRACTThe behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.

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