Effect of Recoil Implantation of Oxygen on Boron Enhanced Diffusion in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
D. Fan ◽  
R. J. Jaccodine
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Device Fabrication ◽  
Boron Diffusion ◽  
Spreading Resistance ◽  
Recoil Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

Transmission Electron Microscopy Study of the Microstructure of Np- Etched CdTe Thin Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 558-559
Author(s):  
K.M. Jones ◽  
Y. Yan ◽  
F.S. Hasoon ◽  
M.M. Al-Jassim
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Device Fabrication ◽  
Back Contact ◽  
Transmission Electron ◽  
Cdte Thin Films ◽  
Cdte Surface

Polycrystalline CdTe is a promising candidate for solar cells due to its nearly ideal band-gap, high absorption coefficient, and ease of film fabrication. Small-area CdTe/CdS cells with efficiencies of 16.0% have been demonstrated. The structure of a typical CdTe/CdS solar cell (Figure 1) consists of a glass superstrate, on which a thin layer of SnO2 is deposited (front contact), n-type CdS, p-type CdTe, and a back contact. Prior to applying the back contact to the CdTe, etching of the CdTe surface using a mixture of nitric and phosphoric (NP) acids is normally needed. It is known that the etching depletes a crystalline CdTe surface of Cd and creates a Te-rich layer. Two effects of the Te-rich layer has been proposed, namely, forming a Te-CdTe low-series-resistance contact and improving CdTe device stability by the gettering of Cu. Thus, the NP etching is an important process in the CdTe device fabrication. in this paper, we report on transmission electron microscopy (TEM) study of the microstructure of the surface of NP etched CdTe thin films.

Structural and electrical characterization of carbon nanotube interconnects by combined transmission electron microscopy and scanning spreading resistance microscopy

2011 ◽  
Vol 1349 ◽  
Author(s):  
Thomas Hantschel ◽  
Xiaoxing Ke ◽  
Nicolo’ Chiodarelli ◽  
Andreas Schulze ◽  
Hugo Bender ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuits ◽  
Quantitative Measurement ◽  
Electrical Characterization ◽  
Research Needs ◽  
Spreading Resistance ◽  
Transmission Electron ◽  
Plane View

ABSTRACTThe use of carbon nanotubes (CNT) as interconnects in future integrated circuits (IC) is being considered as a replacement for copper. As this research needs also innovative metrology solutions, we have developed a combined approach for the plane-view analysis of CNT integrated in contact holes where transmission electron microscopy (TEM) enables the quantitative measurement of density and structure of the CNT and where scanning spreading resistance microscopy (SSRM) is used to electrically map the distribution of the CNT. This paper explains the used methodologies in detail and presents results from 300 nm diameter contact holes filled with CNT of 8-12 nm in diameter and a density of about 2 x 1011 cm-2.

Crystalline Particles in Thermally Grown Silicon Dioxide

1982 ◽  
Vol 14 ◽  
Author(s):  
F. A. Ponce ◽  
T. Yamashita
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Silicon Dioxide ◽  
Silicon Layer ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Lattice Images ◽  
Thermally Grown

ABSTRACTSmall crystalline particles in the vicinity of the Si/SiO2 interface have been directly observed by high resolution transmission electron microscopy. These crystallites have typical diameters between 20 and 120 Å. Based on the observed interplanar spacings and angles in lattice images, the structure of these particles has been found to match those of cristobalite. Some orientation relationships also appear to exist between these particles and the silicon layer.

Study on Stabilizing Cubic HfO2 Doped Y2O3 using Transmission Electron Microscopy

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
P. Gu ◽  
W. Walkosz ◽  
G. Yang ◽  
R.F. Klie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dielectric Constant ◽  
Electron Microscope ◽  
Silicon Dioxide ◽  
Gate Insulator ◽  
Cubic Phase ◽  
Promising Candidate ◽  
Transmission Electron ◽  
Common Gate

Traditionally, the most common gate insulator used in transistors is Silicon Dioxide or SiO2; however, as transistors are made smaller and smaller a breaking point has been reached such that SiO2 no longer acts as an insulator. For this reason, in order to continue improving transistor density, a material or a combination of materials must replace or be added to SiO2 as a gate insulator. HfO2seems to be a promising candidate due to its higher dielectric constant compared to Si2 and large band gap. Furthermore, by doping this HfO2 with Yttrium Oxide or Y2O3, the structural transformation from the monoclinic to the cubic phase is possible, consequently maintaining a higher dielectric constant. Several different samples of HfO2 with varying concentrations of Y2O3 were studied using a Transmission Electron Microscope (TEM) in order to analyze the structure alterations at various temperatures.

The Mechanisms of Relaxation in Strained Layer GeSi/Si Superlattices: Diffusion Vs. Dislocation Formation

1987 ◽  
Vol 103 ◽  
Author(s):  
F. K. LeGoues ◽  
S. S. Iyer ◽  
K. N. Tu ◽  
S. L. Delage
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Strained Layer ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Through Diffusion ◽  
Strained Layer Superlattices ◽  
Plane View ◽  
Dislocation Formation

ABSTRACTSixGe1−x strained layer superlattices are known to be metastable in that they can be grown fully commensurate with layer thickness higher than the equilibrium, calculated Tc at which dislocation formation becomes energetically favorable. In this paper, we describe the mechanism of relaxation in such multilayers. Both plane-view and cross-sectional transmission electron microscopy (TEM) were used to examine the formation of dislocation at the different interfaces. RBS was used to follow interdiffusion. We found two competing mechanisms for relaxation: The preferred mode for relaxation is the creation of dislocation networks at each of the interfaces. This process can be stopped or considerably inhibited by the difficulty of forming new dislocations in samples which are perfectly commensurate after growth; Some dislocations appear necessary in order to generate more dislocations during annealing. When this is not the case, the only possible way to attain relaxation is through diffusion. In such a case, stress-enhanced diffusion is observed, with a diffusion coefficient 200 times higher than expected.

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