A Simple Model for the Transient, Enhanced Diffusion of Ion-Implanted Phosphorus in Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
F. F. Morehead ◽  
R.T. Hodgson
Keyword(s):  
Simple Model ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Large Movement ◽  
Mobile Component ◽  
Phosphorus In Silicon ◽  
P Distribution ◽  
Total P ◽  
Si Wafer

ABSTRACTUnlike As, B as well as P implanted into Si exhibits transient, enhanced diffusion. For example, when P implants are annealed for times of ~1 s at temperatures > 900°C, we observe a large movement of dopant toward the furnace of the Si wafer which is nearly independent of temperature 1050-1200°C. Once the temperature rises above 1200-1250°C the diffusion is similar to that normally observed. We model the experimental results as a transient, enhanced diffusion of a mobile component, about half the total phosphorus implant, distributed deeper in the bulk than the total P distribution. This mobile component may be linked to a large super-saturation of self-interstitials produced by the 50 keV implantation, which are expected to be left deeper in the bulk than the total dopant profile.

Boron Enhanced Diffusion Due to High Energy Ion-Implantation and Its Suppression by Using RTA Process

1994 ◽  
Vol 354 ◽  
Author(s):  
Atsuki ONO ◽  
Hitoshi ABIKO ◽  
Isarai SAKAI
Keyword(s):  
Anomalous Diffusion ◽  
High Energy ◽  
Device Fabrication ◽  
Systematic Analysis ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Initial Stage ◽  
Boron Implantation ◽  
Shallow Channel

AbstractSIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of ∼2E13cm-2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700∼800°C annealing, and it takes place in the initial stage (less than 30sec for 800°C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1000-1100°C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Transient enhanced diffusion of phosphorus in silicon

1986 ◽  
Vol 49 (25) ◽  
pp. 1711-1713 ◽  
Author(s):  
N. E. B. Cowern ◽  
D. J. Godfrey ◽  
D. E. Sykes
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Phosphorus In Silicon

scholarly journals Spatial distribution patterns of soil total phosphorus influenced by climatic factors in China’s forest ecosystems

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jie Zhu ◽  
Anchi Wu ◽  
Guoyi Zhou
Keyword(s):  
Spatial Distribution ◽  
Forest Ecosystems ◽  
Climatic Factors ◽  
Critical Role ◽  
Effect Of Temperature ◽  
P Concentration ◽  
Single Effect ◽  
The Impact ◽  
P Distribution ◽  
Total P

AbstractPhosphorus (P) is an important element in terrestrial ecosystems and plays a critical role in soil quality and ecosystem productivity. Soil total P distributions have undergone large spatial changes as a result of centuries of climate change. It is necessary to study the characteristics of the horizontal and vertical distributions of soil total P and its influencing factors. In particular, the influence of climatic factors on the spatial distribution of soil total P in China’s forest ecosystems remain relatively unknown. Here, we conducted an intensive field investigation in different forest ecosystems in China to assess the effect of climatic factors on soil total P concentration and distribution. The results showed that soil total P concentration significantly decreased with increasing soil depth. The spatial distribution of soil total P increased with increasing latitude and elevation gradient but decreased with increasing longitude gradient. Random forest models and linear regression analyses showed that the explanation rate of bioclimatic factors and their relationship with soil total P concentration gradually decreased with increasing soil depths. Variance partitioning analysis demonstrated that the most important factor affecting soil total P distribution was the combined effect of temperature and precipitation factor, and the single effect of temperature factors had a higher explanation rate compare with the single effect of precipitation factors. This work provides a new farmework for the geographic distribution pattern of soil total P and the impact of climate variability on P distribution in forest ecosystems.

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

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