Experimental Investigation of Transient Enhanced Diffusion (TED) of Phosphorus Implants in Silicon in the MeV Range

1997 ◽  
Vol 469 ◽  
Author(s):  
Lahir S. Adam ◽  
Mark E. Law
Keyword(s):  
Experimental Investigation ◽  
High Energy ◽  
Low Energy ◽  
Prior Work ◽  
Enhanced Diffusion ◽  
Energy Regime ◽  
Transient Enhanced Diffusion ◽  
Per Se ◽  
High Energy Regime

ABSTRACTTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Prior work has concentrated on TED resulting from sub 200 KeV implants. However, the results applicable to the low energy regime cannot be extrapolated per se into the high energy regime. Furnace anneals have been performed and through simulations it has been observed that there is a differential diffusivity enhancement between the part of the profile before the profile peak and that beyond the profile peak. Longer saturation times compared to the low energy implants have also been observed.

scholarly journals SCATTERING OF SCALAR PERTURBATIONS WITH COSMOLOGICAL CONSTANT IN LOW-ENERGY AND HIGH-ENERGY REGIMES

2010 ◽  
Vol 25 (28) ◽  
pp. 2431-2445 ◽  
Author(s):  
MOLIN LIU ◽  
BENHAI YU ◽  
RUMIN WANG ◽  
LIXIN XU
Keyword(s):  
Cosmological Constant ◽  
High Energy ◽  
Low Energy ◽  
Massless Scalar ◽  
Central Mass ◽  
Absorption Probability ◽  
Limit Value ◽  
Symmetric Spacetimes ◽  
Energy Regime ◽  
High Energy Regime

We study the absorption and scattering of massless scalar waves propagating in spherically symmetric spacetimes with dynamical cosmological constant both in low-energy and high-energy zones. In the former low-energy regime, we solve analytically the Regge–Wheeler wave equation and obtain an analytic absorption probability expression which varies with [Formula: see text], where M is the central mass and Λ is cosmological constant. The low-energy absorption probability, which is in the range of [0, 0.986701], increases monotonically with increase in Λ. In the latter high-energy regime, the scalar particles adopt their geometric optics limit value. The trajectory equation with effective potential emerges and the analytic high-energy greybody factor, which is relevant with the area of classically accessible regime, also increases monotonically with increase in Λ, as long Λ is less than or of the order of 104. In this high-energy case, the null cosmological constant result reduces to the Schwarzschild value [Formula: see text].

scholarly journals CROSSING THE PHANTOM DIVIDE WITH k-ESSENCE IN BRANEWORLDS

2010 ◽  
Vol 25 (29) ◽  
pp. 2469-2481 ◽  
Author(s):  
LUIS P. CHIMENTO ◽  
MÓNICA FORTE ◽  
MARTÍN G. RICHARTE
Keyword(s):  
Equation Of State ◽  
High Energy ◽  
Chaplygin Gas ◽  
Energy Conditions ◽  
De Sitter ◽  
Effective Equation ◽  
Phantom Divide ◽  
Energy Regime ◽  
High Energy Regime ◽  
Stable Stage

We study a flat three-brane in the presence of a linear k field with nonzero cosmological constant Λ4. In this model the crossing of the phantom divide (PD) occurs when the k-essence energy density becomes negative. We show that in the high energy regime the effective equation of state has a resemblance of a modified Chaplygin gas while in the low energy regime it becomes linear. We find a scale factor that begins from a singularity and evolves to a de Sitter stable stage while other solutions have a super-accelerated regime and end with a big rip. We use the energy conditions to show when the effective equation of state of the brane-universe crosses the PD.

scholarly journals Evolution of gravitational waves in the high-energy regime of brane-world cosmology

2005 ◽  
Vol 609 (1-2) ◽  
pp. 133-142 ◽  
Author(s):  
Takashi Hiramatsu ◽  
Kazuya Koyama ◽  
Atsushi Taruya
Keyword(s):  
Gravitational Waves ◽  
High Energy ◽  
Brane World ◽  
Energy Regime ◽  
High Energy Regime

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

1997 ◽  
Vol 469 ◽  
Author(s):  
N. E. B. Cowern ◽  
E. J. H. Collart ◽  
J. Politiek ◽  
P. H. L. Bancken ◽  
J. G. M. Van Berkum ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Crystalline Silicon ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Physical Mechanisms ◽  
Transient Enhanced Diffusion ◽  
Junction Formation ◽  
Silicon Cmos

ABSTRACTLow energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

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