scholarly journals Effect of Si and SiO2Substrates on the Geometries of As-Grown Carbon Coils

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Semi Park ◽  
Sung-Hoon Kim ◽  
Tae-Gyu Kim
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quartz Substrate ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Surface Morphologies

Carbon coils could be synthesized using C2H2/H2as source gases and SF6as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2thin film deposited Si substrate (SiO2substrate), and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2substrates and the different etched characteristics of Si and SiO2substrates by SF6 + H2flow.

Preparation of Lithium Niobate Thin Film by Thermal Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5227-5232 ◽  
Author(s):  
Y. S. Shin ◽  
M. Yoshida ◽  
Y. Akiyama ◽  
N. Imaishi ◽  
S. C. Jung
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Lithium Niobate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 425-430 ◽  
Author(s):  
W. Zhu ◽  
F.R. Sivazlian ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Wire Mesh ◽  
Reactor Wall ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition.

Large field emission from carbon nanotubes grown on patterned catalyst thin film by thermal chemical vapor deposition

2002 ◽  
Vol 323 (1-4) ◽  
pp. 171-173 ◽  
Author(s):  
Takashi Ikuno ◽  
Tetsuro Yamamoto ◽  
Motoki Kamizono ◽  
Syunji Takahashi ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Field ◽  
Thermal Chemical Vapor Deposition

Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Precursor ◽  
Metalorganic Deposition ◽  
Constituent Elements ◽  
Film Method

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).

Formation of Nanocrystalline Si by Au-Catalyzed CH3SiH3 Pulse Jet CVD

2013 ◽  
Vol 750 ◽  
pp. 244-247
Author(s):  
Toshiaki Abe ◽  
Shouhei Anan ◽  
Fumiya Watanabe ◽  
Ryoji Takahashi ◽  
Yoshifumi Ikoma
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Pulse Jet ◽  
Nanocrystalline Si ◽  
Au Thin Film

Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition has been investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3 pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at 1150 °C resulted in circular patterns with a diameter of ~40 µm on the sample surfaces. In the center of the circular patterns, agglomerations of Au were observed. It was found that the oxide layer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circular patterns. These results indicate that the nanocrystalline Si was grown by the VLS process in which Si atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.

Humidity Sensor Using CVD Deposited SnO2 Thin Film

2013 ◽  
Vol 667 ◽  
pp. 415-420
Author(s):  
A.K.S. Shafura ◽  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
S. Ahmad ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Humidity Sensor ◽  
Chemical Vapor ◽  
Sno2 Thin Film ◽  
Optical And Electrical Properties ◽  
Fesem Image ◽  
Thermal Chemical Vapor Deposition

In this paper we address sensitivity of SnO2 thin film deposited by thermal chemical vapor deposition in terms of its behavior towards humidity variations. The structural, optical and electrical properties of SnO2 thin film deposit at different substrate temperature grown by thermal chemical vapor deposition (CVD) are also reviewed. FESEM image reveal smallest particle size of SnO2 at substrate temperature 500°C. Pl measurement shows red shift of SnO2 at substrate temperature 500°C. All thin film performing slightly linear sensitivities towards relative humidity (RH%).

Effect of Thin Films on Radiative Transport in Chemical Vapor Deposition Systems

1999 ◽  
Author(s):  
Sandip Mazumder ◽  
Alfred Kersch
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wave Theory ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Contributing Factors ◽  
Thermal Chemical Vapor Deposition ◽  
Wafer Substrate

Abstract The thermal behavior of a wafer during a Rapid Thermal Chemical Vapor Deposition (RTCVD) process depends on its spectral radiative properties, along with other factors. One of the major contributing factors is the thin film that is deposited on the wafer substrate. The presence of a thin film (of thickness anywhere above 0.1 nm) can drastically alter the radiative properties of the wafer surface, thereby leading to significantly different wafer temperatures. This article presents a model to simulate thin film effects in RTCVD processes. Radiative transfer is modeled using a Monte-Carlo ray-tracing technique. Radiative properties are calculated using fundamental Electromagnetic Wave Theory. Simulation results match remarkably well with experimental data, demonstrating the importance of thin film effects.

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