Ultrahigh vacuum/chemical vapor deposition epitaxy of silicon and germanium–silicon heterostructures

1994 ◽  
Vol 12 (4) ◽  
pp. 979-985 ◽  
Author(s):  
D. W. Greve ◽  
R. Misra ◽  
R. Strong ◽  
T. E. Schlesinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Silicon And Germanium ◽  
Germanium Silicon ◽  
Silicon Heterostructures

Deposition of Monolayer-Scale Germanium/Silicon Heterostructures by Rapid Thermal Chemical Vapor Deposition

1994 ◽  
Vol 342 ◽  
Author(s):  
A. St. Amour ◽  
J.C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Cvd Growth ◽  
First Time ◽  
Germanium Silicon ◽  
Silicon Heterostructures

ABSTRACTDeposition of monolayer scale Ge/Si heterostructures by Rapid Thermal Chemical Vapor Deposition has been achieved for the first time. All previous work in this area was by Molecular Beam Epitaxy. We have observed the change in Ge growth rate at 500°C as the Si substrate was covered by the first monolayer of Ge. Auger Electron Spectroscopy and Raman scattering experiments determined that the CVD growth mode for Ge on Si (100) at 550°C is Stranski-Krastanov, with the transition to islanding occurring after three monolayers.

scholarly journals Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

APL Materials ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 046105 ◽  
Author(s):  
Xiaoyu Ji ◽  
Hiu Yan Cheng ◽  
Alex J. Grede ◽  
Alex Molina ◽  
Disha Talreja ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Conformal Coating ◽  
Pressure Chemical ◽  
Silicon And Germanium

Properties of Si1 − x − y Ge x  C  y Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 146 (12) ◽  
pp. 4611-4618 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
S. K. Ray ◽  
B. Anantharam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Films

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

1995 ◽  
Vol 38 (12) ◽  
pp. 2029-2033
Author(s):  
Hsiao-Yi Lin ◽  
Tan Fu Lei ◽  
Horng-Chih Lin ◽  
Chun-Yen Chang ◽  
Ruey-Ching Twu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Polycrystalline Films

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

1995 ◽  
Vol 67 (8) ◽  
pp. 1092-1094 ◽  
Author(s):  
W. C. Tsai ◽  
C. Y. Chang ◽  
T. G. Jung ◽  
T. S. Liou ◽  
G. W. Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor

Ultrahigh Vacuum Chemical Vapor Deposition (UHVCVD)

2012 ◽  
pp. 2789-2789
Author(s):  
Suhas S. Joshi ◽  
Lesa A. Tran ◽  
Lon J. Wilson ◽  
Suhas S. Joshi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor
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