Dielectrics on Silicon Thermally Grown or Annealed in a Nitrogen Rich Environment
Keyword(s):
20 Nm
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ABSTRACTIn this paper we review various methods of improving the properties of extremely thin dielectrics (<20 nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric (<5 nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.