scholarly journals Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics

1995 ◽  
Vol 16 (8) ◽  
pp. 345-347 ◽  
Author(s):  
Z.-Q. Yao ◽  
H.B. Harrison ◽  
S. Dimitrijev ◽  
Y.T. Yeow
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
Thermally Grown

Selection and characteristics of peptides that bind thermally grown silicon dioxide films

2005 ◽  
Vol 22 (5-6) ◽  
pp. 201-204 ◽  
Author(s):  
Edward Eteshola ◽  
Leonard J. Brillson ◽  
Stephen Craig Lee
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thermally Grown

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

2016 ◽  
Vol 858 ◽  
pp. 465-468 ◽  
Author(s):  
D.P. Ettisserry ◽  
Neil Goldsman ◽  
Akin Akturk ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Functional Theory ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Nitrogen Incorporation ◽  
Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

1999 ◽  
Vol 146 (5) ◽  
pp. 1879-1883 ◽  
Author(s):  
Takayuki Aoyama ◽  
Hiroko Tashiro ◽  
Kunihiro Suzuki
Keyword(s):  
Silicon Dioxide ◽  
Thermally Grown

Thermally-Grown Silicon-Dioxide Waveguides for Use in UV Light

2000 ◽  
Vol 39 (Part 1, No. 3B) ◽  
pp. 1487-1489 ◽  
Author(s):  
Shogo Ura ◽  
Toru Nakashiba ◽  
Toshiaki Suhara ◽  
Hiroshi Nishihara ◽  
Paul V. Lambeck
Keyword(s):  
Silicon Dioxide ◽  
Uv Light ◽  
Thermally Grown

Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide

2020 ◽  
Vol 127 (3) ◽  
pp. 034302 ◽  
Author(s):  
K. Filintoglou ◽  
F. Pinakidou ◽  
J. Arvanitidis ◽  
D. Christofilos ◽  
E. C. Paloura ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Dioxide ◽  
Size Control ◽  
Thermally Grown

Repair of thin thermally grown silicon dioxide by anodic oxidation

2008 ◽  
Vol 53 (8) ◽  
pp. 3395-3402 ◽  
Author(s):  
Li Chen ◽  
Yinglin Zhou ◽  
Steffi Krause ◽  
Andres G. Munoz ◽  
Julia Kunze ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Anodic Oxidation ◽  
Thermally Grown

Dielectrics on Silicon Thermally Grown or Annealed in a Nitrogen Rich Environment

1994 ◽  
Vol 342 ◽  
Author(s):  
H. Barry Harrison ◽  
Andrew Misiura ◽  
Sima Dimitrijev ◽  
Denis Sweatman ◽  
Z. Yao ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Nitric Oxides ◽  
Nitrous Oxides ◽  
20 Nm ◽  
Thin Dielectrics ◽  
Thermally Grown

ABSTRACTIn this paper we review various methods of improving the properties of extremely thin dielectrics (<20 nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric (<5 nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.

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