The Relative Importance of Char and Volatile Nitrogen on Formation of Nitrous Oxides and Nitric Oxides

1999 ◽  
Vol 13 (6) ◽  
pp. 1252-1254 ◽  
Author(s):  
De-Chang Liu ◽  
Zheng-Shun Wu ◽  
Bo-xiong Shen ◽  
Bo Feng ◽  
Zhi-Jie Lin
1999 ◽  
Vol 13 (6) ◽  
pp. 1111-1113 ◽  
Author(s):  
De-Chang Liu ◽  
Bo-Xiong Shen ◽  
Bo Feng ◽  
Zhi-Jie Lin ◽  
Ji-Dong Lu

1994 ◽  
Vol 342 ◽  
Author(s):  
H. Barry Harrison ◽  
Andrew Misiura ◽  
Sima Dimitrijev ◽  
Denis Sweatman ◽  
Z. Yao ◽  
...  

ABSTRACTIn this paper we review various methods of improving the properties of extremely thin dielectrics (<20 nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric (<5 nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.


2001 ◽  
Vol 120 (5) ◽  
pp. A678-A679
Author(s):  
G ANDERSON ◽  
S WILKINS ◽  
T MURPHY ◽  
G CLEGHORN ◽  
D FRAZER

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