Growing Pseudomorphic Layers Beyond the Critical Thickness Using Free-Standing Compliant Substrates

1993 ◽  
Vol 326 ◽  
Author(s):  
C.L. Chua ◽  
W.Y. Hsu ◽  
F. Ejeckam ◽  
A. Tran ◽  
Y.H. Lo
Keyword(s):  
Critical Thickness ◽  
Free Standing ◽  
Compliant Substrates

scholarly journals In-place bonded semiconductor membranes as compliant substrates for III–V compound devices

Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3748-3756
Author(s):  
Ailton J. Garcia Jr. ◽  
Leonarde N. Rodrigues ◽  
Saimon Filipe Covre da Silva ◽  
Sergio L. Morelhão ◽  
Odilon D. D. Couto Jr. ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Compliant Substrates ◽  
Fundamental Challenge ◽  
Pseudomorphic Growth

Overcoming the critical thickness limit in pseudomorphic growth of lattice mismatched heterostructures is a fundamental challenge in heteroepitaxy.

Compliant Substrates for Reduction of Strain Relief in Mismatched Overlayers

1996 ◽  
Vol 441 ◽  
Author(s):  
Carrie Carter-Coman ◽  
Robert Bicknell-Tassius ◽  
April S. Brown ◽  
Nan Marie Jokerst
Keyword(s):  
Thin Film ◽  
Variable Thickness ◽  
Critical Thickness ◽  
Strain Relief ◽  
Compliant Substrate ◽  
Compliant Substrates ◽  
Experimental Strain

AbstractThin film compliant substrates can be used to extend the critical thickness in mismatched overlayers. A metastability model has been coupled with recent experimental strain relief data to determine the critical thickness of InGaAs epilayers grown on GaAs compliant substrates of variable thickness. The results of this model are also compared to other compliant substrate critical thickness models.

Extended Pseudomorphic Limits Using Compliant Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Lo ◽  
W. J. Schaff ◽  
D. Teng
Keyword(s):  
Dynamic Model ◽  
Equilibrium Model ◽  
Thermal Equilibrium ◽  
Membrane Structure ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Substrate Thickness ◽  
New Approach ◽  
Supported Membrane ◽  
Compliant Substrates

ABSTRACTWe propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.

Overcoming the pseudomorphic critical thickness limit using compliant substrates

1994 ◽  
Vol 64 (26) ◽  
pp. 3640-3642 ◽  
Author(s):  
C. L. Chua ◽  
W. Y. Hsu ◽  
C. H. Lin ◽  
G. Christenson ◽  
Y. H. Lo
Keyword(s):  
Critical Thickness ◽  
Compliant Substrates

Modeling Self-Propagating Exothermic Reactions in Multilayer Systems

1997 ◽  
Vol 481 ◽  
Author(s):  
S. Jayaraman ◽  
A. B. Mann ◽  
O. M. Knio ◽  
D. Van Heerden ◽  
G. Bao ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Temperature Profiles ◽  
Bilayer Thickness ◽  
Free Standing ◽  
Multilayer Systems ◽  
Exothermic Reactions ◽  
Multilayer Foils ◽  
Reaction Characteristics ◽  
Reactive Foils ◽  
Experimental Values

ABSTRACTSelf-propagating reactions in free-standing multilayer foils provide a unique opportunity to study very rapid, diffusion-based transformations in non-equilibrium material systems. To fully understand the coupling between mass and thermal diffusion controlling these reactions and to optimize the commercial use of reactive foils, we have undertaken analytical and numerical modeling. Our analytical model predicts an increase in the reaction velocities with decreasing bilayer thickness down to a critical bilayer thickness and a reversal in this trend below the critical thickness. Predicting reaction characteristics such as the flame thermal width, the reaction zone width and the effect of variations in material properties with temperature has proven analytically intractable. To overcome these limitations, we have also used numerical methods to determine the composition and temperature profiles ahead of the reaction front for different multilayer periods and premixing. The results are compared with experimental values where possible.

scholarly journals Critical Thickness of Free-Standing Nanothin Films Made of Melted Polyethylene Chains via Molecular Dynamics

Polymers ◽  
2021 ◽  
Vol 13 (20) ◽  
pp. 3515
Author(s):  
José Antonio González-Mijangos ◽  
Enrique Lima ◽  
Roberto Guerra-González ◽  
Fernando Iguazú Ramírez-Zavaleta ◽  
José Luis Rivera
Keyword(s):  
Molecular Dynamics ◽  
Film Thickness ◽  
Molecular Dynamics Simulations ◽  
Critical Thickness ◽  
Mechanical Stability ◽  
Radius Of Gyration ◽  
Free Standing ◽  
Thermal Limit ◽  
Density Profiles ◽  
Dynamics Simulations

The mechanical stability of nanothin free-standing films made of melted polyethylene chains was predicted via molecular dynamics simulations in the range of 373.15–673.15 K. The predicted critical thickness, tc, increased with the square of the temperature, T, with additional chains needed as T increased. From T = 373.15 K up to the thermal limit of stability for polyethylene, tc values were in the range of nanothin thicknesses (3.42–5.63 nm), which approximately corresponds to 44–55 chains per 100 nm2. The density at the center of the layer and the interfacial properties studied (density profiles, interfacial thickness, and radius of gyration) showed independence from the film thickness at the same T. The polyethylene layer at its tc showed a lower melting T (<373.15 K) than bulk polyethylene.

Compliant Substrates With an Embedded Twist Boundary

1998 ◽  
Vol 510 ◽  
Author(s):  
Y. H. Lo ◽  
Z. H. Zhu
Keyword(s):  
Thin Layer ◽  
Current Theory ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Twist Boundary ◽  
Free Standing ◽  
New Model ◽  
Compliant Substrates ◽  
Threading Dislocation Density ◽  
Average Size

AbstractIn this article, we propose a new model to explain how heteroepitaxial layers grown on a twist-bonded thin layer may have a significantly reduced number of threading dislocations even if the strain in the epitaxial layers is relaxed. We first point out the deficiency in the existing compliant substrate theory by showing that all the synthesized “compliant substrates” fail to behave as “ideal” free-standing templates assumed by the current theory. Our new model is constructed on the base of stress field interactions between the heteroepitaxial layer and the embedded twist boundary. In the new model, the reduction in threading dislocation density originates from the extension of the dislocation half loops due to the effect of misfit dislocation pinning by the twist boundary. When the average size of the dislocation half loops increases substantially from micrometers to millimeters or even to the size of the wafer, the density of threading dislocations drops significantly. This model does not require any “macroscopic” motion between the bonded thin layer and the handle wafer as the current theory does, which makes it more agreeable with the experimental results

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