scholarly journals In-place bonded semiconductor membranes as compliant substrates for III–V compound devices

Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3748-3756
Author(s):  
Ailton J. Garcia Jr. ◽  
Leonarde N. Rodrigues ◽  
Saimon Filipe Covre da Silva ◽  
Sergio L. Morelhão ◽  
Odilon D. D. Couto Jr. ◽  
...  

Overcoming the critical thickness limit in pseudomorphic growth of lattice mismatched heterostructures is a fundamental challenge in heteroepitaxy.

1996 ◽  
Vol 423 ◽  
Author(s):  
Chinkyo Kim ◽  
I. K. Robinson ◽  
Jaemin Myoung ◽  
Kyuhwan Shim ◽  
Kyekyoon Kim ◽  
...  

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.


1983 ◽  
Vol 25 ◽  
Author(s):  
A. T. Fiory ◽  
L. C. Feldman ◽  
J. C. Bean ◽  
I. K. Robinson

ABSTRACTStructure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.


1996 ◽  
Vol 441 ◽  
Author(s):  
Carrie Carter-Coman ◽  
Robert Bicknell-Tassius ◽  
April S. Brown ◽  
Nan Marie Jokerst

AbstractThin film compliant substrates can be used to extend the critical thickness in mismatched overlayers. A metastability model has been coupled with recent experimental strain relief data to determine the critical thickness of InGaAs epilayers grown on GaAs compliant substrates of variable thickness. The results of this model are also compared to other compliant substrate critical thickness models.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chen-Yuan Hsieh ◽  
Pei-Cheng Jiang ◽  
Wei-Hsiang Chen ◽  
Jyh-Shen Tsay

AbstractBy way of introducing heterogeneous interfaces, the stabilization of crystallographic phases is critical to a viable strategy for developing materials with novel characteristics, such as occurrence of new structure phase, anomalous enhancement in magnetic moment, enhancement of efficiency as nanoportals. Because of the different lattice structures at the interface, heterogeneous interfaces serve as a platform for controlling pseudomorphic growth, nanostructure evolution and formation of strained clusters. However, our knowledge related to the strain accumulation phenomenon in ultrathin Fe layers on face-centered cubic (fcc) substrates remains limited. For Fe deposited on Ir(111), here we found the existence of strain accumulation at the interface and demonstrate a strain driven phase transition in which fcc-Fe is transformed to a bcc phase. By substituting the bulk modulus and the shear modulus and the experimental results of lattice parameters in cubic geometry, we obtain the strain energy density for different Fe thicknesses. A limited distortion mechanism is proposed for correlating the increasing interfacial strain energy, the surface energy, and a critical thickness. The calculation shows that the strained layers undergo a phase transition to the bulk structure above the critical thickness. The results are well consistent with experimental measurements. The strain driven phase transition and mechanism presented herein provide a fundamental understanding of strain accumulation at the bcc/fcc interface.


1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Lo ◽  
W. J. Schaff ◽  
D. Teng

ABSTRACTWe propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.


1994 ◽  
Vol 64 (26) ◽  
pp. 3640-3642 ◽  
Author(s):  
C. L. Chua ◽  
W. Y. Hsu ◽  
C. H. Lin ◽  
G. Christenson ◽  
Y. H. Lo

1990 ◽  
Vol 202 ◽  
Author(s):  
C. Snyder ◽  
J. Pamulapati ◽  
B. Orr ◽  
P. K. Bhattacharya ◽  
J. Singh

ABSTRACTIn this paper we examine the role of strain and growth kinetics on the growth modes in pseudomorphic growth. Regimes below critical thickness and above critical thickness are examined. Based on atomistic modelling and in-situ RHEED and STM studies we show that a competition between surface chemical energy and strain energy is shown to lead to 3-dimensional blend mode for high strain pseudomorphy. Consequences for dislocation generation are discussed.


1988 ◽  
Vol 64 (6) ◽  
pp. 3043-3050 ◽  
Author(s):  
R. H. M. van de Leur ◽  
A. J. G. Schellingerhout ◽  
F. Tuinstra ◽  
J. E. Mooij

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