Extended Pseudomorphic Limits Using Compliant Substrates
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ABSTRACTWe propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.
2021 ◽
Vol 213
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pp. 104620
2015 ◽
Vol 156
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pp. 257-265
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2010 ◽
Vol 166-167
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pp. 149-154
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2001 ◽
Vol 44
(8)
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pp. 1619-1625
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