Optical Properties of Low Dielectric Constant Polyimides and Effects of Orientation

1993 ◽  
Vol 323 ◽  
Author(s):  
David C. Rich ◽  
Peggy Cebe ◽  
Anne K. St. Clair
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Fluorine Content ◽  
Polymer Chains ◽  
Low Dielectric Constant ◽  
Refractive Indices ◽  
Electronic Polarizability ◽  
Low Dielectric ◽  
Preferential Alignment

AbstractControl of the refractive index in low dielectric constant polyimides through modification of chemistry and structure was investigated. The optical refractive indices of several low dielectric constant polyimides were measured, and the effects of orientation on optical anisotropy were determined. Refractive index in these polyimides was found to decrease with increasing fluorine content due primarily to the low electronic polarizability of the fluorine-carbon bonds. In zone drawn polyimides, refractive index was found to increase substantially in the direction of the draw, but decrease substantially normal to the draw direction. This was explained in terms of the preferential alignment of the polymer chains.

Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources

2020 ◽  
Vol 993 ◽  
pp. 927-932
Author(s):  
Zhi Wei He ◽  
Hong Xiao Lin ◽  
Chun Yan Li ◽  
Ashok M. Mahajan ◽  
Swati A. Gupta ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Precursor Solution ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Mis Devices ◽  
Iv Curves ◽  
Silicon Sources

Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1,3,5-tris(triethoxymethyl) on SiO2 films was investigated. The synthesized solutions were used as silicon sources to prepare silica-like backbone films. The investigation showed that all precursors can able to produce the flat and uniform films. An FTIR spectrum confirmed the formation of SiO2 in film matrix. The results indicated that the internal microstructure of each film is different. The incorporation of less polar bonds such as F and C was carried out using various Si sources, while the introduction of these sources confirmed through FTIR spectra. Optical properties of the films were carried out by using ellipsometric porosometry (EP) measurement. The leakage current density for the films prepared by using TEOS, MTES and 135TTEB was observed to be 2.8 × 10-7 A/cm2, 2.9 × 10-8 A / cm2, and 4.1 × 10-6 A / cm2, respectively, at 1 MV/cm electric field strength by the IV curves obtained by semiconductor characterization after fabricating MIS devices. The calculated dielectric constants from RI of the deposited SiO2 films were 2.0, 1.9 and 2.5 respectively. When the microstructure of the precursor solution changed, the introduction of atomic morphology or terminal inerted group ratio changed the internal bridging mode of SiO2, and thereby significantly reduced the dielectric constant and improved insulation.

Electrical and Optical Properties of Low Dielectric Constant Planarization Polymer for High-Aperture-Ratio a-Si:H TFT-LCDs

1997 ◽  
Vol 471 ◽  
Author(s):  
Je-Hsiung Lan ◽  
Tsung-Kuan Chou ◽  
Chun-Sung Chiang ◽  
Jerzy Kanicki
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Aperture Ratio ◽  
Light Region ◽  
Average Optical Transmittance

ABSTRACTWe have evaluated the electrical and the optical properties of a planarization polymer (benzocyclobutene; BCB) having a dielectric constant of 2.65 for the application to high aperture-ratio a-Si:H TFT-LCDs. An average optical transmittance of 96 % was found for the BCB film having a thickness of 3 μm in the visible-light region (400–700 nm) of the absorption spectrum. Experimental results showed that the back-channel etched a-Si:H TFT electrical performance was not significantly affected by the BCB passivation. In addition, the three-dimensional analysis of the coupling capacitances between ITO pixel electrode and metal bus lines have indicated that the low dielectric constant of planarization polymer is necessary for the application of this material to the high-aperture-ratio a-Si:H TFT-LCDs. Finally, we have established that for a given tolerance margin, a certain value of polymer thickness is needed to suppress the feed-through voltage and the vertical cross-talk between pixel electrode and metal bus lines.

PECVD of Low Dielectric Constant Fluorine-Doped SiO2 Using TICS/O2/TFAA with In-Situ Annealing

1999 ◽  
Vol 565 ◽  
Author(s):  
I. Idris ◽  
O. Sugrura
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Infrared Spectrum ◽  
Silicon Dioxide ◽  
Water Absorption ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Peak Intensity ◽  
Doped Silicon

AbstractA fluorine-doped silicon dioxide (SiO2:F) film with dielectric constant as low as 3.0 was deposited by introducing trifluoroacetic anhydride ((CF3CO) 2O TFAA) into our hydrogen-free SiO2 PECVD system using tetraisocyanatesilane (Si(NCO)4 TICS) and O2. The film was deposited at 100°C and 0.5 Torr. It was annealed by in-situ, 0.2 Torr O2 plasma treatment at 400°C for 1 hour, as well as post-metallization annealing in N2 ambient at 400°C for 1 hour. The refractive index and the ratio of infrared absorbance of Si-F/Si-O-Si peak intensity were 1.37 and 11.7%, respectively. No peak related to water absorption was clearly observed in its infrared spectrum even after contact-holes opened and dipped into boiling water for 2 hours.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Sign in / Sign up

Export Citation Format

Share Document