PECVD of Low Dielectric Constant Fluorine-Doped SiO2 Using TICS/O2/TFAA with In-Situ Annealing

1999 ◽  
Vol 565 ◽  
Author(s):  
I. Idris ◽  
O. Sugrura
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Infrared Spectrum ◽  
Silicon Dioxide ◽  
Water Absorption ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Peak Intensity ◽  
Doped Silicon

AbstractA fluorine-doped silicon dioxide (SiO2:F) film with dielectric constant as low as 3.0 was deposited by introducing trifluoroacetic anhydride ((CF3CO) 2O TFAA) into our hydrogen-free SiO2 PECVD system using tetraisocyanatesilane (Si(NCO)4 TICS) and O2. The film was deposited at 100°C and 0.5 Torr. It was annealed by in-situ, 0.2 Torr O2 plasma treatment at 400°C for 1 hour, as well as post-metallization annealing in N2 ambient at 400°C for 1 hour. The refractive index and the ratio of infrared absorbance of Si-F/Si-O-Si peak intensity were 1.37 and 11.7%, respectively. No peak related to water absorption was clearly observed in its infrared spectrum even after contact-holes opened and dipped into boiling water for 2 hours.

Stress Development in Low Dielectric Constant Silica Films During Drying and Heating Process

1999 ◽  
Vol 594 ◽  
Author(s):  
Mengcheng Lu ◽  
C. Jeffrey Brinker
Keyword(s):  
Dielectric Constant ◽  
Tensile Stress ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Heating Process ◽  
Residual Tensile Stress ◽  
Silica Films ◽  
Stress Development ◽  
Low Dielectric

AbstractLow dielectric constant silica films are made using a surfactant templated sol-gel process (K∼2.5) or an ambient temperature and pressure aerogel process (K∼1.5). This paper will present the in-situ measurement and analysis of stress development during the making of these films, from the onset of drying till the end of heating. The drying stress is measured by a cantilever beam technique; the thermal stress is measured by monitoring the wafer curvature using a laser deflection method. During the course of drying, the surfactant templated films experience a low drying stress due to the influence of the surfactant on surface tension and extent of siloxane condensation. The aerogel films first develop a biaxial tensile stress due to solidification and initial drying. At the final stage of drying where the drying stress vanishes, dilation of the film recreates the porosity of the wet gel state, reducing the residual stress to zero. For the surfactant templated films, very small residual tensile stress remains after the heat treatment is finished (∼30MPa). Aerogel film has almost no measurable stress developed in the calcination process. In situ spectroscopic ellipsometry analysis during drying and heating, and TGA/DTA are all used to help understand the stress development.

Low Dielectric Constant Polyimide Hybrid Films Prepared by in Situ Blow-Balloon Method

2019 ◽  
Vol 1 (8) ◽  
pp. 2189-2196 ◽  
Author(s):  
Zhao Chen ◽  
Dandan Zhu ◽  
Faqin Tong ◽  
Xuemin Lu ◽  
Qinghua Lu
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Hybrid Films ◽  
Low Dielectric

Synthesis of a Novel Low Dielectric Constant Fluorine Containing Epoxy

2012 ◽  
Vol 262 ◽  
pp. 448-453 ◽  
Author(s):  
Jian Yong Lv ◽  
Yan Meng ◽  
Li Fan He ◽  
Teng Qiu ◽  
Xiao Yu Li ◽  
...  
Keyword(s):  
Weight Loss ◽  
Dielectric Constant ◽  
Bisphenol A ◽  
Water Absorption ◽  
Diglycidyl Ether ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Degradation Temperature

A novel fluorine containing epoxy 4-fluoro-4′,4″-diepoxypropoxy triphenyl methane (FDE) was designed and synthesized. The synthesized epoxy was cured by methyl nadic anhydride (MNA) and diglycidyl ether of bisphenol A (DGEBA) was chosen for comparison. Both glass transfer temperature (Tg) and 5% weight loss degradation temperature (Td5%) of cured FDE are over 60°C higher than that of DGEBA. Dielectric constants of the cured FDE at 106 Hz and 107 Hz are 3.09 and 2.91, comparing to 3.50 and 3.24 of the cured DGEBA, respectively. Furthermore, water absorption of the cured FDE is lower than that of DGBEA.

Optical Properties of Low Dielectric Constant Polyimides and Effects of Orientation

1993 ◽  
Vol 323 ◽  
Author(s):  
David C. Rich ◽  
Peggy Cebe ◽  
Anne K. St. Clair
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Fluorine Content ◽  
Polymer Chains ◽  
Low Dielectric Constant ◽  
Refractive Indices ◽  
Electronic Polarizability ◽  
Low Dielectric ◽  
Preferential Alignment

AbstractControl of the refractive index in low dielectric constant polyimides through modification of chemistry and structure was investigated. The optical refractive indices of several low dielectric constant polyimides were measured, and the effects of orientation on optical anisotropy were determined. Refractive index in these polyimides was found to decrease with increasing fluorine content due primarily to the low electronic polarizability of the fluorine-carbon bonds. In zone drawn polyimides, refractive index was found to increase substantially in the direction of the draw, but decrease substantially normal to the draw direction. This was explained in terms of the preferential alignment of the polymer chains.

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack

2008 ◽  
Vol 600-603 ◽  
pp. 987-990 ◽  
Author(s):  
A. Kumta ◽  
E. Rusli ◽  
J.H. Xia
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Silicon Dioxide ◽  
Breakdown Voltage ◽  
Field Enhancement ◽  
Low Dielectric Constant ◽  
Field Plate ◽  
Low Dielectric ◽  
High K ◽  
Sputter Deposited

Silicon dioxide (SiO2), one of the commonly used dielectrics for field plate terminated 4H-SiC devices suffers from high electric field and premature breakdown due to its low dielectric constant (k). This problem can be addressed by using high-k dielectrics such as AlN that will reduce the field and improve the breakdown voltage (VB). Sputter deposited amorphous AlN films with a thickness (tAl) ranging from 0.05 μm to 1.3 μm have been deposited on 4H-SiC n-type samples with a 10 μm thick epilayer doped with nitrogen to a concentration of 1.7–3.5×1015/cm3 . The VB of the diodes was found to improve to as much as 1500 V at tAl = 0.8 μm, which is more than 2 times the VB of unterminated structures which have a premature breakdown between 600-700 V due to field enhancement at the diode periphery.

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