Electrical and Optical Properties of Low Dielectric Constant Planarization Polymer for High-Aperture-Ratio a-Si:H TFT-LCDs

1997 ◽  
Vol 471 ◽  
Author(s):  
Je-Hsiung Lan ◽  
Tsung-Kuan Chou ◽  
Chun-Sung Chiang ◽  
Jerzy Kanicki
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Aperture Ratio ◽  
Light Region ◽  
Average Optical Transmittance

ABSTRACTWe have evaluated the electrical and the optical properties of a planarization polymer (benzocyclobutene; BCB) having a dielectric constant of 2.65 for the application to high aperture-ratio a-Si:H TFT-LCDs. An average optical transmittance of 96 % was found for the BCB film having a thickness of 3 μm in the visible-light region (400–700 nm) of the absorption spectrum. Experimental results showed that the back-channel etched a-Si:H TFT electrical performance was not significantly affected by the BCB passivation. In addition, the three-dimensional analysis of the coupling capacitances between ITO pixel electrode and metal bus lines have indicated that the low dielectric constant of planarization polymer is necessary for the application of this material to the high-aperture-ratio a-Si:H TFT-LCDs. Finally, we have established that for a given tolerance margin, a certain value of polymer thickness is needed to suppress the feed-through voltage and the vertical cross-talk between pixel electrode and metal bus lines.

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

Polynorbornene for Low K Interconnection

1997 ◽  
Vol 476 ◽  
Author(s):  
N. R. Grove ◽  
P. A. Kohl ◽  
S. A. Bidstrup-Allen ◽  
R. A. Shick ◽  
B. L. Goodall ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Moisture Absorption ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
High Glass Transition Temperature ◽  
Low Dielectric ◽  
Microelectronics Industry

AbstractWithin the microelectronics industry, there is an ongoing trend toward miniaturization coupled with higher performance. The scaling of transitors toward smaller dimensions, higher speeds, and lower power has resulted in an urgent need for low dielectric constant interlevel insulators. Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SLA Roadmap. Thus, there exists a need in the microelectronics industry for a thermally stable, noncorrosive low dielectric constant polymer with good solvent resistance, high glass transition temperature, good mechanical performance and good adhesive properties, particularly to copper. In addition, the desired dielectric material should be capable of being processed in environmentally friendly solvents, and the final thermal and electrical performance should not be affected by manufacturing or post environmental conditions. High glass transition temperature polynorbornenes are being developed which provide many of these desired features. This polymer family is produced via a new transition metal catalyzed polymerization. Attributes which make polynorbornene particularly attractive in microelectronics include: (i) excellent thermal performance, (ii) adhesion to conductors without the use of adhesion promoters or barrier layers, (iii) very low moisture absorption (< 0.1 wt %), and (iv) low dielectric constant (2.2 – 2.6). Side groups which have been added to the polynorbornene backbone improve adhesion, dielectric properties and mechanical properties.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Optical Properties of Low Dielectric Constant Polyimides and Effects of Orientation

1993 ◽  
Vol 323 ◽  
Author(s):  
David C. Rich ◽  
Peggy Cebe ◽  
Anne K. St. Clair
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Fluorine Content ◽  
Polymer Chains ◽  
Low Dielectric Constant ◽  
Refractive Indices ◽  
Electronic Polarizability ◽  
Low Dielectric ◽  
Preferential Alignment

AbstractControl of the refractive index in low dielectric constant polyimides through modification of chemistry and structure was investigated. The optical refractive indices of several low dielectric constant polyimides were measured, and the effects of orientation on optical anisotropy were determined. Refractive index in these polyimides was found to decrease with increasing fluorine content due primarily to the low electronic polarizability of the fluorine-carbon bonds. In zone drawn polyimides, refractive index was found to increase substantially in the direction of the draw, but decrease substantially normal to the draw direction. This was explained in terms of the preferential alignment of the polymer chains.

Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources

2020 ◽  
Vol 993 ◽  
pp. 927-932
Author(s):  
Zhi Wei He ◽  
Hong Xiao Lin ◽  
Chun Yan Li ◽  
Ashok M. Mahajan ◽  
Swati A. Gupta ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Precursor Solution ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Mis Devices ◽  
Iv Curves ◽  
Silicon Sources

Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1,3,5-tris(triethoxymethyl) on SiO2 films was investigated. The synthesized solutions were used as silicon sources to prepare silica-like backbone films. The investigation showed that all precursors can able to produce the flat and uniform films. An FTIR spectrum confirmed the formation of SiO2 in film matrix. The results indicated that the internal microstructure of each film is different. The incorporation of less polar bonds such as F and C was carried out using various Si sources, while the introduction of these sources confirmed through FTIR spectra. Optical properties of the films were carried out by using ellipsometric porosometry (EP) measurement. The leakage current density for the films prepared by using TEOS, MTES and 135TTEB was observed to be 2.8 × 10-7 A/cm2, 2.9 × 10-8 A / cm2, and 4.1 × 10-6 A / cm2, respectively, at 1 MV/cm electric field strength by the IV curves obtained by semiconductor characterization after fabricating MIS devices. The calculated dielectric constants from RI of the deposited SiO2 films were 2.0, 1.9 and 2.5 respectively. When the microstructure of the precursor solution changed, the introduction of atomic morphology or terminal inerted group ratio changed the internal bridging mode of SiO2, and thereby significantly reduced the dielectric constant and improved insulation.

Low Dielectric Constant Fluorinated Polyimides for Interlayer Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
John Pellerin ◽  
Robert Fox ◽  
Huei-Min Ho
Keyword(s):  
Dielectric Constant ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Metal Structures ◽  
Single Level ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Fluorinated Polyimides ◽  
Low K

AbstractThis paper presents the results of development, characterization and integration screening of low dielectric constant (low k) fluorinated polyimides for interlayer dielectric applications. Evolution of these materials has progressed with the intent of improving fundamental thin film properties, such as thermal stress behavior, modulus, CTE, and dielectric constant. Further refinements to fluorinated polyimides have been to improve their process compatibility and integration characteristics, primarily in the area of deep sub-micron gap filling. The avenues taken to attain these objectives will be illustrated.Subsequent integration of low k fluorinated polyimides has been achieved for a completed single-level metal BEOL test vehicle to highlight the impacts of the film's adhesion, mechanical and thermomechanical properties. In addition, the completed fluorinated polyimide single-level metal structures have been used to characterize electrical performance in contrast to single-level metal structures with TEOS dielectric. Intralevel capacitance and leakage current have been measured with dual comb and serpentine structures. Modeling has been applied to verify dielectric constant in submicron geometries from the capacitance measurements.

Parylene AF-4: A Low εR Material Candidate For ULSI Multilevel Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
A.S. Harrus ◽  
M.A. Plano ◽  
D. Kumar ◽  
J. Kelly
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Vapor Deposition ◽  
Mechanical Stability ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Good Adhesion ◽  
Low Dielectric ◽  
Device Integration ◽  
Electrical Data

AbstractParylene VIPTM AF-4 dielectric is a potential low εR candidate for ULSI manufacture. The search for new IMD materials with low dielectric constant (k ≤ 2.5) to enable sub 0.18 micron technologies is focusing on new polymers, deposited by either spinning or CVD methods. Two classes of requirements have to be satisfied for a material to be successful, i.e., used in volume device manufacturing. First, a set of physical characteristics have to be met, among the most important are thermal stability above 400 °C, mechanical stability, and good adhesion to a variety of substrates. Then, a second set of more stringent requirements have to be met related to device integration. For example, electrical performance in a device and dry etching for via formation. We report results on the evaluation of Parylene AF-4, deposited by vapor-deposition polymerization of tetrafluoro-p-xylylene. We present data on deposition characteristics, film composition and purity, thermal stability as well as preliminary electrical data.

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