scholarly journals ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Barbour ◽  
M. L. Lovejoy ◽  
C. I. H. Ashby ◽  
A. J. Howard ◽  
J. S. Custer ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Fold Increase ◽  
Film Stress ◽  
Dielectric Films ◽  
Plasma Synthesis ◽  
Ecr Plasma ◽  
Composition Profiles

ABSTRACTThe growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.

Control of Optical Performance from Er-Doped Alumina Synthesized Using An Ecr Plasma

1997 ◽  
Vol 504 ◽  
Author(s):  
J. C. Barbour ◽  
B. G. Potter
Keyword(s):  
Near Infrared ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
Thermal Release ◽  
Simple Linear Equation ◽  
Er Doped

ABSTRACTHydrogen in deposited optical ceramics can modify the optical properties, and therefore the role of the hydrogen needs to be understood to control its effects. Erbium-doped amorphous alumina films were deposited using simultaneous electron beam evaporation of aluminum and erbium while bombarding the sample with 30 eV 02+ ions from an electron cyclotron resonance (ECR) plasma. The hydrogen content was measured, using elastic recoil detection, as a function of isochronal annealing treatments. The data was fit to a simple trap-release model in order to determine an effective activation energy for the thermal release of H from alumina and Er-doped alumina. The intensity of the ion-beam stimulated luminescence from these samples was monitored in the visible and near infrared regions as a function of the thermal treatments. In order to gain a better understanding of the influence of hydrogen, the ionoluminescence (IL) data from samples containing hydrogen were fit with a simple linear equation.

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Boron Nitride Materials for Tribological and High Temperature High Power Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
N. Badi ◽  
A. Tempez ◽  
D. Starkov ◽  
N. Medelcr ◽  
A. Bensaoula ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Optical Damage ◽  
Force Microscopy ◽  
Ecr Plasma

ABSTRACTBoron nitride thin films on sapphire substrates were investigated for their tribological and optoelectronic applications. A gridless end Hall gun source and an electron cyclotron resonance (ECR) source were used for nitrogen species delivery while pure boron was evaporated at a rate of 0.2 Å/s. The surface stability of these thin films was investigated by high temperature annealing. Atomic force microscopy (AFM), friction force microscopy (FFM), and Knoop microhardness measurements were performed on the materials in order to assess their merits as tribological coatings. Finally, BN thin films were subjected to laser transient photoconductivity (TPC) experiments to determine both their optical laser damage threshold as well as their photoconductivity characteristics. For both single-pulse shot and multiple-pulse irradiation regimes, preliminary tests showed the higher the ion beam current used during growth (70–150 mA), the higher the optical damage threshold. The lower damage threshold was typical of BN films grown using an ECR plasma source and was measured to be in the range of ∼50 MW/cm2. Optical damage of films grown at ion beam currents above 100 mA was not observed at laser intensities up to few hundreds MW/cm2. A multiphoton excitation technique was utilized to obtain PC signals from this wide band gap material and preliminary results show that unusual PC voltage amplitudes as high as 0.5 V were observed.

scholarly journals ECR plasma source for heavy ion beam charge neutralization

2003 ◽  
Vol 21 (1) ◽  
pp. 37-40 ◽  
Author(s):  
PHILIP C. EFTHIMION ◽  
ERIK GILSON ◽  
LARRY GRISHAM ◽  
PAVEL KOLCHIN ◽  
RONALD C. DAVIDSON ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Low Pressure ◽  
Heavy Ion ◽  
Electron Cyclotron ◽  
Wave Damping ◽  
Charge Neutralization ◽  
Ecr Plasma ◽  
Ecr Source

Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1–100 times the ion beam density and at a length ∼0.1–2 m would be suitable for achieving a high level of charge neutralization. An Electron Cyclotron Resonance (ECR) source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1–10 gauss. The goal is to operate the source at pressures ∼10−6 Torr at full ionization. The initial operation of the source has been at pressures of 10−4–10−1 Torr. Electron densities in the range of 108 to 1011 cm−3 have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source. This article also describes the wave damping mechanisms. At moderate pressures (> 1 mTorr), the wave damping is collisional, and at low pressures (< 1 mTorr) there is a distinct electron cyclotron resonance.

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

1989 ◽  
Vol 165 ◽  
Author(s):  
Steven Dzioba
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Plasma Source ◽  
Optoelectronic Device ◽  
Dielectric Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Applications ◽  
Inp Substrates

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

Advanced Dielectrics for Passivation of INSB

1992 ◽  
Vol 284 ◽  
Author(s):  
J. C. Barbour ◽  
S. A. Casalnuovo ◽  
S. R. Kurtz
Keyword(s):  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Rutherford Backscattering Spectrometry ◽  
Interface State ◽  
Dielectric Surface ◽  
Composition Analysis ◽  
Elastic Recoil ◽  
Ecr Plasma ◽  
State Densities ◽  
The Difference

ABSTRACTA combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiOx Ny on InSb at temperatures from 30°C to 250°C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (C-V) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si3ON2 on InSb, and sulfided layers capped with S3ON2 all exhibited good C-V properties consistent with interface state densities on the order of 1011/cm2-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si3N4 on InSb and the adhesion of Si3ON2 on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.

Hydrogen in Dielectric Film Formation from an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 236 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

AbstractThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100-600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an asgrown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

2003 ◽  
Vol 786 ◽  
Author(s):  
H. Castán ◽  
S. Dueñas ◽  
J. Barbolla ◽  
A. Del Prado ◽  
E. San Andrés ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Chemical Vapour ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Mis Capacitors

ABSTRACTA study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiOxNy films deposited on silicon by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) is presented. Interface trap densities measured by deep level transient spectroscopy (DLTS) are higher for silicon oxynitride-based MIS capacitors than for silicon nitride and silicon oxide-silicon nitride-based ones. However, conductance transient analysis demonstrated that Al/SiNx/Si devices exhibit the highest disordered-induced gap states (DIGS) density, whereas the lowest one corresponds to Al/SiNx/SiO2/Si, and silicon oynitride-based MIS capacitors show an intermediate behaviour. In addition, thermal treatments applied to Al/SiOxNy/Si samples reduce DIGS densities to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.

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