Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

2003 ◽  
Vol 786 ◽  
Author(s):  
H. Castán ◽  
S. Dueñas ◽  
J. Barbolla ◽  
A. Del Prado ◽  
E. San Andrés ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Chemical Vapour ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Mis Capacitors

ABSTRACTA study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiOxNy films deposited on silicon by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) is presented. Interface trap densities measured by deep level transient spectroscopy (DLTS) are higher for silicon oxynitride-based MIS capacitors than for silicon nitride and silicon oxide-silicon nitride-based ones. However, conductance transient analysis demonstrated that Al/SiNx/Si devices exhibit the highest disordered-induced gap states (DIGS) density, whereas the lowest one corresponds to Al/SiNx/SiO2/Si, and silicon oynitride-based MIS capacitors show an intermediate behaviour. In addition, thermal treatments applied to Al/SiOxNy/Si samples reduce DIGS densities to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.

Conductance Transients Study of Slow Traps in Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

1997 ◽  
Vol 500 ◽  
Author(s):  
S. Dueñas ◽  
R. Peláez ◽  
E. Castán ◽  
J. Barbolla ◽  
I. Mártil ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Perfect Agreement ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Interfaces ◽  
Interfacial Defects ◽  
Transient Spectroscopy ◽  
Resonance Plasma

ABSTRACTWe have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200°C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

scholarly journals ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Barbour ◽  
M. L. Lovejoy ◽  
C. I. H. Ashby ◽  
A. J. Howard ◽  
J. S. Custer ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Fold Increase ◽  
Film Stress ◽  
Dielectric Films ◽  
Plasma Synthesis ◽  
Ecr Plasma ◽  
Composition Profiles

ABSTRACTThe growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.

“Recovery” Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

2003 ◽  
Vol 792 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
L. Rigutti ◽  
F. Nava ◽  
P.G. Fuochi ◽  
...  
Keyword(s):  
Deep Level ◽  
Collection Efficiency ◽  
Schottky Diodes ◽  
Chemical Vapour ◽  
Liquid Nitrogen Temperature ◽  
Charge Collection Efficiency ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Lower Temperature ◽  
Different Doses

ABSTRACTThe effects of electron irradiation on the defects associated electronic levels in Schottky diodes on 4H silicon carbide epilayers grown by chemical vapour deposition were investigated by Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) characteristics. These investigations were performed before and after irradiation with 8.6 MeV electrons at different doses. After irradiation four new traps with enthalpies equal to (Ec-0.23 eV), (Ec-0.39 eV), (Ec-0.63 eV) and (Ec-0.75 eV) were detected. Their thermal stability, a key point to determine their structure on the basis of recent theoretical and experimental results, was carefully investigated since it was earlier observed that during DLTS temperature runs up to 500 K a slight but significant recovery of a few irradiation-induced levels occurs. This effect was previously observed in literature for the level (Ec-0.70 eV) after thermal treatment at 500 °C [1], but the present results indicate that it involves more than a single level and is also effective at lower temperature. DLTS analyses were also performed from room temperature to liquid nitrogen temperature and vice versa up to 500 K.The annealing kinetics is reported and a few conclusions on the structure of the defects involved in the recovery are drawn. The correlation with the diode charge collection efficiency is also reported.

On the Influence of Illumination During Ion Damage Defect Anneal of Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Tanabe ◽  
S. Ashok
Keyword(s):  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Minor Role ◽  
Extended Defects ◽  
Rapid Thermal Anneal ◽  
Thermal Generation ◽  
Ion Damage ◽  
Transient Spectroscopy ◽  
A Minor

AbstractAn exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors

2015 ◽  
Vol 242 ◽  
pp. 61-66
Author(s):  
Eddy Simoen ◽  
Valentina Ferro ◽  
Barry O’Sullivan
Keyword(s):  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Silicon Layer ◽  
Si Substrate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Transient Spectroscopy ◽  
P Type ◽  
Mis Capacitors

Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p+ or n+ a-Si:H gate on an intrinsic i-a-Si:H passivation layer deposited on crystalline silicon n-or p-type substrates. It is shown that the type of gate has a pronounced impact on the obtained spectra, whereby both the kind of defects (dangling bonds at the a-Si:H/(100) c-Si interface (Pb0 defects) or in the amorphous silicon layer (D defects) and their relative importance (peak amplitude) may be varied. The highest trap densities have been found for the p+ a-Si:H gate capacitors on an n-type Si substrate. In addition, the spectra may exhibit unexpected negative peaks, suggesting minority carrier capture. These features are tentatively associated with interface states at the p+ or n+ a-Si:H/i-a-Si:H interface. Their absence in Al-gate capacitors is in support of this hypothesis.

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

2010 ◽  
Vol 96 (10) ◽  
pp. 103507 ◽  
Author(s):  
Chun Gong ◽  
Eddy Simoen ◽  
Niels Posthuma ◽  
Emmanuel Van Kerschaver ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deep Level Transient Spectroscopy ◽  
Surface Passivation ◽  
Deep Level ◽  
Interface States ◽  
Spectroscopy Study ◽  
Transient Spectroscopy ◽  
Silicon Interface
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