Control of Optical Performance from Er-Doped Alumina Synthesized Using An Ecr Plasma

1997 ◽  
Vol 504 ◽  
Author(s):  
J. C. Barbour ◽  
B. G. Potter
Keyword(s):  
Near Infrared ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
Thermal Release ◽  
Simple Linear Equation ◽  
Er Doped

ABSTRACTHydrogen in deposited optical ceramics can modify the optical properties, and therefore the role of the hydrogen needs to be understood to control its effects. Erbium-doped amorphous alumina films were deposited using simultaneous electron beam evaporation of aluminum and erbium while bombarding the sample with 30 eV 02+ ions from an electron cyclotron resonance (ECR) plasma. The hydrogen content was measured, using elastic recoil detection, as a function of isochronal annealing treatments. The data was fit to a simple trap-release model in order to determine an effective activation energy for the thermal release of H from alumina and Er-doped alumina. The intensity of the ion-beam stimulated luminescence from these samples was monitored in the visible and near infrared regions as a function of the thermal treatments. In order to gain a better understanding of the influence of hydrogen, the ionoluminescence (IL) data from samples containing hydrogen were fit with a simple linear equation.

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Hydrogen in Dielectric Film Formation from an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 236 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

AbstractThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100-600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an asgrown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

scholarly journals Time-Of-Flight ERDA for Depth Profiling of Light Elements

2020 ◽  
Vol 4 (4) ◽  
pp. 40
Author(s):  
Keisuke Yasuda
Keyword(s):  
Ion Beam ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Semiconductor Detectors ◽  
Light Elements ◽  
Elastic Recoil ◽  
Measurement Sensitivity ◽  
Elastic Recoil Detection ◽  
Detection Analysis

The time-of-flight elastic recoil detection analysis (TOF-ERDA) method is one of the ion beam analysis methods that is capable of analyzing light elements in a sample with excellent depth resolution. In this method, simultaneous measurements of recoil ion energy and time of flight are performed, and ion mass is evaluated. The energy of recoil ions is calculated from TOF, which gives better energy resolution than conventional Silicon semiconductor detectors (SSDs). TOF-ERDA is expected to be particularly applicable for the analysis of light elements in thin films. In this review, the principle of TOF-ERDA measurement and details of the measurement equipment along with the performance of the instrumentation, including depth resolution and measurement sensitivity, are described. Examples of TOF-ERDA analysis are presented with a focus on the results obtained from the measurement system developed by the author.

scholarly journals ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Barbour ◽  
M. L. Lovejoy ◽  
C. I. H. Ashby ◽  
A. J. Howard ◽  
J. S. Custer ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Fold Increase ◽  
Film Stress ◽  
Dielectric Films ◽  
Plasma Synthesis ◽  
Ecr Plasma ◽  
Composition Profiles

ABSTRACTThe growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Boron Nitride Materials for Tribological and High Temperature High Power Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
N. Badi ◽  
A. Tempez ◽  
D. Starkov ◽  
N. Medelcr ◽  
A. Bensaoula ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Optical Damage ◽  
Force Microscopy ◽  
Ecr Plasma

ABSTRACTBoron nitride thin films on sapphire substrates were investigated for their tribological and optoelectronic applications. A gridless end Hall gun source and an electron cyclotron resonance (ECR) source were used for nitrogen species delivery while pure boron was evaporated at a rate of 0.2 Å/s. The surface stability of these thin films was investigated by high temperature annealing. Atomic force microscopy (AFM), friction force microscopy (FFM), and Knoop microhardness measurements were performed on the materials in order to assess their merits as tribological coatings. Finally, BN thin films were subjected to laser transient photoconductivity (TPC) experiments to determine both their optical laser damage threshold as well as their photoconductivity characteristics. For both single-pulse shot and multiple-pulse irradiation regimes, preliminary tests showed the higher the ion beam current used during growth (70–150 mA), the higher the optical damage threshold. The lower damage threshold was typical of BN films grown using an ECR plasma source and was measured to be in the range of ∼50 MW/cm2. Optical damage of films grown at ion beam currents above 100 mA was not observed at laser intensities up to few hundreds MW/cm2. A multiphoton excitation technique was utilized to obtain PC signals from this wide band gap material and preliminary results show that unusual PC voltage amplitudes as high as 0.5 V were observed.

scholarly journals ECR plasma source for heavy ion beam charge neutralization

2003 ◽  
Vol 21 (1) ◽  
pp. 37-40 ◽  
Author(s):  
PHILIP C. EFTHIMION ◽  
ERIK GILSON ◽  
LARRY GRISHAM ◽  
PAVEL KOLCHIN ◽  
RONALD C. DAVIDSON ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Low Pressure ◽  
Heavy Ion ◽  
Electron Cyclotron ◽  
Wave Damping ◽  
Charge Neutralization ◽  
Ecr Plasma ◽  
Ecr Source

Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1–100 times the ion beam density and at a length ∼0.1–2 m would be suitable for achieving a high level of charge neutralization. An Electron Cyclotron Resonance (ECR) source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1–10 gauss. The goal is to operate the source at pressures ∼10−6 Torr at full ionization. The initial operation of the source has been at pressures of 10−4–10−1 Torr. Electron densities in the range of 108 to 1011 cm−3 have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source. This article also describes the wave damping mechanisms. At moderate pressures (> 1 mTorr), the wave damping is collisional, and at low pressures (< 1 mTorr) there is a distinct electron cyclotron resonance.

Characterization of Microcrystalline Si Films by MeV Ion Scattering Techniques

2000 ◽  
Vol 638 ◽  
Author(s):  
W. Bohne ◽  
J. Röhrich ◽  
B. Selle ◽  
M. Birkholz ◽  
F. Fenske ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Impurity Content ◽  
Heavy Ion ◽  
Ion Scattering ◽  
Elastic Recoil ◽  
Interference Structure ◽  
Detection Analysis ◽  
Apparent Similarity ◽  
Si Films

AbstractRutherford Backscattering Spectroscopy (RBS) and channeling studies with 1.4 MeV−4He ions as well as Heavy-Ion Elastic Recoil Detection Analysis (HI-ERDA) with 230 MeV 129Xe ions have been applied to characterize structural properties and the impurity content of thin Si films. The analytical potential of these ion-beam techniques is demonstrated for two types of samples: (1) μc-Si films prepared by dc magnetron sputtering in a pure Ar plasma and (2) homoepitaxial Si films deposited by low-temperature electron-cyclotron resonance PECVD at the transition from oriented to disordered growth. For μc-Si the atomic area density N.d obtained by RBS was compared with the optical thickness n.d (n=refractive index) derived from the interference structure of IR reflection spectra. It is shown that the ratio R=n.d/N.d of these quantities can serve as a figure of merit for the degree of crystalline order. An apparent similarity was found in the case of the epitaxially grown films between the Si disorder profiles evaluated from the RBS channeling spectra and the hydrogen and oxygen profiles determined by HI-ERDA. This suggests that hydrogen and oxygen are preferentially incorporated in the disordered parts of the films.

H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

1998 ◽  
Vol 513 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots
Keyword(s):  
Ion Beam ◽  
Elastic Recoil ◽  
Signal To Noise ◽  
Chemical Cleaning ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Atomic Force ◽  
Beam Analysis ◽  
Wet Chemical ◽  
First Time

ABSTRACTSi(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.

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