ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

1989 ◽  
Vol 165 ◽  
Author(s):  
Steven Dzioba
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Plasma Source ◽  
Optoelectronic Device ◽  
Dielectric Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Applications ◽  
Inp Substrates

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

scholarly journals ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Barbour ◽  
M. L. Lovejoy ◽  
C. I. H. Ashby ◽  
A. J. Howard ◽  
J. S. Custer ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Fold Increase ◽  
Film Stress ◽  
Dielectric Films ◽  
Plasma Synthesis ◽  
Ecr Plasma ◽  
Composition Profiles

ABSTRACTThe growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.

Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

1992 ◽  
Vol 242 ◽  
Author(s):  
R. K. Singh ◽  
D. Gilbert ◽  
R. Tellshow ◽  
R. Koba ◽  
R. Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Diamond Films ◽  
Processing Parameters ◽  
Gas Composition ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Bonding Characteristics

ABSTRACTWe have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

InNxSb1−x Light Emitting Diodes Grown by MBE

1999 ◽  
Vol 607 ◽  
Author(s):  
A. D. Johnson ◽  
R. H. Bennett ◽  
J. Newey ◽  
G J Pryce ◽  
G M Williams ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electron Cyclotron Resonance ◽  
Secondary Ion Mass Spectrometry ◽  
Active Regions ◽  
Plasma Source ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Light Emitting ◽  
Ecr Plasma ◽  
Transmission Electron

We present the first reported MBE growth of light emitting diodes (LED's) with active regions made up of InSb/ InNxSbl−x (O<x<0.02) superlattices, grown onto InSb(100) substrates. Such dilute alloys of nitrogen in other III-V materials have been shown to exhibit very large bandgap bowing parameters due to differences in atomic size and the electro-negativity of nitrogen. Novel growth techniques have been developed to enable epitaxy of high quality InNxSbl−x, using an electron cyclotron resonance (ECR) plasma source. Material characterisation was performed by double crystal x-ray diffraction (DXRD) and transmission electron microscopy (TEM), and nitrogen composition has been determined using DXRD and secondary ion mass spectrometry (SIMS). To determine the effect of nitrogen on bandgap, the structures have been fabricated into LED's with InSb/InNxSbl−x superlattice active regions with period ∼1100A. For a nitrogen content of ∼0.3%, the peak emission of the diodes shifts from ∼6pm to >71µm at room temperature.

Effects of gas adsorbed on solid surface during gas breakdown in electron cyclotron resonance discharge

2021 ◽  
Author(s):  
Sheng Hui Fu ◽  
Zhen- Feng Ding
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Vertical Component ◽  
Plasma Source ◽  
Time Interval ◽  
Short Time Interval ◽  
Gas Flow Rate ◽  
Ecr Plasma ◽  
Long Time

Abstract The microwave breakdown power (Pwb) in an ECR plasma source was not merely determined by pressure (gas flow rate), but found to vary with the time interval between two successive breakdowns. The measured Pwb dropped rapidly from a high value at a short time interval to a low level at a long time interval. The obtained dependence of Pwb on pressure (gas flow rate) exhibited distinct features: the normal monotonicity and abnormal non-monotonicity at the short and long time intervals, respectively. The effective zone in the antenna’s surface bombarded by hot electrons heated in the ECR layer was validated by (1) masking the antenna with a film having a variable radius; (2) calculating the distribution of the vertical component of the microwave electric field with respect to the static magnetic field; (3) imaging glows of transient breakdown discharges with a fast camera. The reduction in Pwb was mainly attributed to the enhanced emission of δ-electrons from the gas-adsorbed antenna under the bombardment of energetic electrons coming from the ECR layer.. The correlation between the dynamic gas coverage and the coefficient emission of δ-electrons was established to understand the abnormal ECR breakdown features.

Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

1990 ◽  
Vol 204 ◽  
Author(s):  
H. Murai ◽  
M. Hayama ◽  
K. Kobayashi ◽  
T. Yamazaki
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Dark Conductivity ◽  
Deposition Condition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Properties ◽  
Hydrogen Incorporation ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

AlN Grown by Metalorganic Molecular Beam Epitaxy

1994 ◽  
Vol 363 ◽  
Author(s):  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. G. Wilson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Nitrogen Sources ◽  
Plasma Source ◽  
Structural Quality ◽  
X Ray ◽  
Ecr Plasma ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Surface Morphologies

AbstractThin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using amine bonded alane precursors, tertiarybutylamine, and nitrogen from a compact electron cyclotron resonance (ECR) plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5 − 1 × 10−4 Torr range. The growth rates, impurity backgrounds and surface morphologies were examined for both nitrogen sources and both the solid and liquid alanes. In general, growth efficiencies were good for both alane precursors, allowing for deposition of the low temperature, ∼ 400°C, AlN buffers needed for subsequent growth of GaN and InGaAlN alloys. Low growth temperatures could not be obtained using tertiarybutylamine, presumably due to poor decomposition efficiency of the source at low temperatures. The structural quality of material grown at high temperatures from the ECR plasma was measured by atomic force microscopy (AFM) and high resolution x-ray diffraction (HRXRD), indicating a surface roughness of ∼ 8 Å and an x-ray width half maximum (FWHM) of 430 arcsec.

Open Resonator Technique for Measurement of Thin Dielectric Film Properties on Optically Dense Substrates

2000 ◽  
Vol 631 ◽  
Author(s):  
Sergey Dudorov ◽  
Dmitri Lioubtchenko ◽  
Juha Mallat ◽  
Jussi Tuovinen ◽  
Antti V. Räisänen
Keyword(s):  
Dielectric Film ◽  
Open Resonator ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Film Properties ◽  
Thin Dielectric Film ◽  
Direct Measurements ◽  
Device Applications ◽  
Thin Dielectric Films ◽  
Good Agreement

ABSTRACTThin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.

ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures

1996 ◽  
Vol 1 ◽  
Author(s):  
Bedwyr Humphreys ◽  
Matthew Govett
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Group V ◽  
Group Iii ◽  
Ecr Plasma ◽  
Selective Etch ◽  
Process Chemistry ◽  
Gas Flow Ratio

A room temperature (RT) plasma etch process has been developed to non-selectively etch GaN/InGaN/AlGaN structures, grown on sapphire substrates, using an electron cyclotron resonance (ECR) plasma source with RIE enhancement. The process chemistry chosen was Cl2/CH4 based in order to facilitate the formation of volatile etch by-products, typically to form group III halides and group V hydrides, although indium is more likely to form an organo-metallic compound as opposed to a chloride. A characteristic of this process is the very smooth sidewall features obtained and the controllability of the etch profile via ECR power, table bias and/or gas flow ratio. Typical results obtained using a RT process were etch rate above 100 nm/min., selectivity to resist mask above 30:1 and smooth anisotropic profile at low ion-energies (below 100 eV). The process etch rate showed a characteristic increase with increasing table bias (above 130 nm/min.) with only small changes in the relative etch rate of each compound (i.e. selectivity maintained at roughly 1:1), however, this etch does rely upon competing etching and deposition mechanisms and thus too large a variation in one parameter without a corresponding compensation with another leads to a rough surface and a more selective etch. The process has also been demonstrated using a metal mask (e.g. Ni) and present work is progressing onto other gas combinations and the use of high temperature electrodes.

The Role of Ions for the Deposition of Hydrocarbon Films, investigated by In-Situ Ellipsometry

1995 ◽  
Vol 388 ◽  
Author(s):  
A. Von Keudell
Keyword(s):  
Growth Rate ◽  
Film Surface ◽  
Ion Bombardment ◽  
Floating Potential ◽  
Film Properties ◽  
Ecr Plasma ◽  
Hydrocarbon Films ◽  
Self Bias

AbstractThe growth mechanisms for the deposition of hydrocarbon films (C:H-films) from a methane electron cyclotron resonance (ECR) plasma are investigated by means of in-situ ellipsometry. Ion bombardment during plasma-enhanced chemical vapor deposition of hydrocarbon films mainly governs the properties of the films and the total growth rate. the role of ions for the growth rate and the film properties is discussed in this paper. Films were deposited with varying RF-bias, resulting in a DC self-bias ranging from floating potential up to 100 V. the ion-induced modification of the film properties was investigated by a new technique using a double layer consisting of a polymer-like film with low optical absorption and a hard carbon film with high absorption on top. the interface between these layers was analysed after deposition by a layer-by-layer etching in an oxygen plasma at floating potential. From these data it is possible to determine with high accuracy the range of the ion-induced modification of the optical properties in the underlying polymer-like film. the thickness of this modified layer ranges from 6 Å at 30 V self-bias to 40 Å at 100 V self-bias, which is consistent with the range of hydrogen ions in polymerlike films as calculated by the computer code TRIM.SP.Based on the presented results, the growth of C:H-films and the resulting film properties can be modelled by the growth at activated sites at the film surface. these activated sites are represented by dangling bonds, induced by the ion bombardment. they also show up in the ellipsometric results during the deposition of C:H-films by a change of the optical response of the film surface.

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