Advanced Dielectrics for Passivation of INSB

1992 ◽  
Vol 284 ◽  
Author(s):  
J. C. Barbour ◽  
S. A. Casalnuovo ◽  
S. R. Kurtz
Keyword(s):  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Rutherford Backscattering Spectrometry ◽  
Interface State ◽  
Dielectric Surface ◽  
Composition Analysis ◽  
Elastic Recoil ◽  
Ecr Plasma ◽  
State Densities ◽  
The Difference

ABSTRACTA combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiOx Ny on InSb at temperatures from 30°C to 250°C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (C-V) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si3ON2 on InSb, and sulfided layers capped with S3ON2 all exhibited good C-V properties consistent with interface state densities on the order of 1011/cm2-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si3N4 on InSb and the adhesion of Si3ON2 on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.

The ECR-Plasma Deposition of Silicon Nitride on a Tunnel Oxide

1991 ◽  
Vol 223 ◽  
Author(s):  
J. C. Barbour ◽  
H. J Stein ◽  
C. A. Outten
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
Gate Dielectric ◽  
Plasma Deposition ◽  
Interface State ◽  
Thermally Grown Oxide ◽  
State Density ◽  
Nitride Film ◽  
Elastic Recoil ◽  
Ecr Plasma

ABSTRACTGate dielectric-quality silicon nitride films were deposited on a tunnel oxide from an SiH4/N2 gas mixture using an electron cyclotron resonance (ECR) plasma. Electrical characteristics depend not only upon the quality of the nitride film but also upon the state of the interfacial oxide. Quasi-static and 1 MHz capacitance-voltage measurements show that a nitride film deposited at 200°C on 2 nm thick thermally-grown oxide (tunnel oxide) on an unbiased Si substrate have an interface state density of l.5×1011/cm2-eV. Time-of-flight elastic recoil detection (TOF-ERD) was used to examine the level of mixing between the tunnel oxide and the deposited silicon nitride as a function of bias voltage. TOF-ERD showed that for an applied bias of −350 V (ion energy ≈ 380 eV), the deposition of a 10 nm thick film was completely mixed to form an oxynitride whereas the tunnel oxide remained intact for an unbiased sample. (Interdiffusion resulting from energetic-beam heating was ruled-out as a possibility for the mixing.)

High Quality Growth of SiO2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors

2001 ◽  
Vol 685 ◽  
Author(s):  
Riyaz Rashid ◽  
A. J. Flewitt ◽  
D. Grambole ◽  
U. Kreiβig ◽  
J. Robertson ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Breakdown Strength ◽  
Plasma Reactor ◽  
Interface State ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Ion Energies ◽  
Phase Combination ◽  
State Densities

AbstractSilicon dioxide (SiO2) films have been deposited at 80°C in an Electron Cyclotron Resonance (ECR) plasma reactor from a gas phase combination of He, O2 and SiH4. The ECR configuration provides a highly ionised plasma (∼1016 m−3) with low ion energies (∼10eV) that gives efficient dehydrogenation of the growing material whilst minimizing defect creation. The physical characterisation of the material gives a refractive index of 1.46, an etch rate in buffered HF below 3 nm/s and a hydrogen content of less than 2 at.%. Electrical tests reveal a resistivity in excess of 1014Ωcm, an average breakdown strength of 5 MV/cm, and fixed charge and interface state densities of 1011 cm−2 and 1012 eV−1cm−2 respectively. This has been achieved using a O2:SiH4 flow ratio ≍ 2:1.

scholarly journals ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Barbour ◽  
M. L. Lovejoy ◽  
C. I. H. Ashby ◽  
A. J. Howard ◽  
J. S. Custer ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Fold Increase ◽  
Film Stress ◽  
Dielectric Films ◽  
Plasma Synthesis ◽  
Ecr Plasma ◽  
Composition Profiles

ABSTRACTThe growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.

Control of Optical Performance from Er-Doped Alumina Synthesized Using An Ecr Plasma

1997 ◽  
Vol 504 ◽  
Author(s):  
J. C. Barbour ◽  
B. G. Potter
Keyword(s):  
Near Infrared ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
Thermal Release ◽  
Simple Linear Equation ◽  
Er Doped

ABSTRACTHydrogen in deposited optical ceramics can modify the optical properties, and therefore the role of the hydrogen needs to be understood to control its effects. Erbium-doped amorphous alumina films were deposited using simultaneous electron beam evaporation of aluminum and erbium while bombarding the sample with 30 eV 02+ ions from an electron cyclotron resonance (ECR) plasma. The hydrogen content was measured, using elastic recoil detection, as a function of isochronal annealing treatments. The data was fit to a simple trap-release model in order to determine an effective activation energy for the thermal release of H from alumina and Er-doped alumina. The intensity of the ion-beam stimulated luminescence from these samples was monitored in the visible and near infrared regions as a function of the thermal treatments. In order to gain a better understanding of the influence of hydrogen, the ionoluminescence (IL) data from samples containing hydrogen were fit with a simple linear equation.

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Plasma Immersion Ion Implantation for Impurity Gettering in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
H. Wong ◽  
X. Y. Qian ◽  
D. Carl ◽  
N. W. Cheung ◽  
M. A. Lieberman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Rutherford Backscattering Spectrometry ◽  
Silicon Wafers ◽  
Ecr Plasma ◽  
Annealing Step ◽  
Plasma Immersion Ion Implantation ◽  
Metallic Impurities ◽  
Saturation Dose

AbstractWe have utilized plasma immersion ion implantation (PIII) to demonstrate effective gettering of metallic impurities in silicon wafers. Metallic impurities such as Ni, Cu or Au were intentionally diffused into Si as marker impurities. The Ar or Ne atoms were ionized in an electron cyclotron resonance (ECR) plasma chamber. The ions were accelerated by a negative voltage applied to the wafer and implanted into the wafer. The as-implanted saturation dose can be as high as 5×1016cm−2. After an annealing step at 1000°C for 1 hour in a N2 ambient, the retained doses and the amount of gettered impurities were measured with Rutherford backscattering spectrometry (RBS). With a retained Ar dose in 1015cm−2 range after annealing, the gettered Ni, Cu and Au were 3.0×1014cm−2, 3.0×1014cm−2 and 4.4×1013cm−2 respectively.

Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

2003 ◽  
Vol 764 ◽  
Author(s):  
F. Ren ◽  
B. Luo ◽  
J. Kim ◽  
R. Mehandru ◽  
B. P. Gila ◽  
...  
Keyword(s):  
Surface State ◽  
Communication Systems ◽  
Surface Passivation ◽  
Surface States ◽  
Interface State ◽  
High Energy ◽  
State Density ◽  
Oxide Semiconductor ◽  
High Electron ◽  
State Densities

Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm-2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm-2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Interface State Densities for SiNx: H on Cleaved GaAs and InP(110)

1999 ◽  
Vol 573 ◽  
Author(s):  
D. Landheer ◽  
J. E. Hulse ◽  
K. Rajesh
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
High Vacuum ◽  
Chemical Vapour ◽  
Low Frequency ◽  
Processing System ◽  
Interface State ◽  
Ultra High Vacuum ◽  
Interface Control ◽  
State Densities

ABSTRACTSilicon nitride was deposited in-situ by electron-cyclotron resonance plasma chemical-vapour deposition (ECR-CVD) on (110) surfaces formed by cleaving GaAs and InP(100) substrates in an ultra-high vacuum processing system. Capacitors formed by depositing Al gates on the facet surfaces were analyzed by the high-low frequency capacitance-voltage (CV) technique. The minimum interface-state densities obtained for the cleaved GaAs (110) surfaces were 1–2 × 1012 eV−1cm−2. For cleaved InP facets the measured minimum interface state densities were a factor of two higher; however, they exhibited a smaller hysteresis in the CV characteristics and a smaller modulation in the surface potential. The interface state densities did not change significantly for the GaAs(110) facets if a Si interface control layer 0.8–2 nm thick was deposited prior to silicon nitride deposition; however, a larger effect was observed for the hysteresis and flatband voltage shift of the CV characteristics. The effect of annealing on the interfaces with Si was investigated and the performance compared with published results for GaAs(100) surfaces prepared by molecular-beam epitaxy.

Hydrogen in Dielectric Film Formation from an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 236 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

AbstractThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100-600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an asgrown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Fabrication of novel self-aligned metal insulator semiconductor field effect transistors (MISFETs) on InP by a S interface engineering technique

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1035-1038 ◽  
Author(s):  
Chetlur S. Sundararaman ◽  
John F. Currie
Keyword(s):  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Interface State ◽  
Fabrication Process ◽  
Interface Engineering ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
State Densities ◽  
First Time

In this paper we demonstrate for the first time that self-aligned metal insulator semiconductor field effect transistors (MISFETs) can be realized on InP by incorporating an effective surface passivation technique in the fabrication process. A chemical sulfur treatment is used to passivate the InP – indirect plasma silicon nitride interface that results in interface state densities (Dit) in the low 1011/cm2 eV. It is observed that while passivated self-aligned MISFETs subjected to post-passivation high-temperature process cycles up to 700 °C exhibit acceptable transistor characteristics, unpassivated MISFETs using the same process do not show any transistor action. The passivation procedure has been successfully used to demonstrate for the first time a self-aligned InP–InGaAs–InP heterojunction insulated gate FET. We conclude from this work that interface engineering techniques like the one used in this study would be essential to realize and (or) improve the performance of self-aligned FET structures based on InP. The fabrication process described here can be directly applied to similar interface engineering techniques.

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