Effects of Simulated X-Ray Lithography Exposures On Submicron-Channel Mosfets

1993 ◽  
Vol 306 ◽  
Author(s):  
A. J. Lelis ◽  
T. R. Oldham
Keyword(s):  
Channel Length ◽  
X Ray ◽  
Hot Carrier ◽  
Processing Steps

AbstractInvestigations of submicron-channel-length n- and p-channel MOSFETs subjected to channel hot-carrier stressing were performed, comparing the reliability of devices with and without exposure to simulated x-ray lithography processing steps. No significant differences were observed between the sample groups.

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

scholarly journals The effects of fine grinding on the physicochemical properties and thermal behavior of bentonite clay

2002 ◽  
Vol 67 (11) ◽  
pp. 753-760 ◽  
Author(s):  
Leposava Filipovic-Petrovic ◽  
Ljiljana Kostic-Gvozdenovic ◽  
Stanka Eric-Antonic
Keyword(s):  
Mechanical Treatment ◽  
Structural Changes ◽  
Bentonite Clay ◽  
Powdered Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Grinding ◽  
Dta Analysis ◽  
Processing Steps ◽  
Vibration Mill

In this study, the results obtained by the mechanical treatment of bentonite clay Zavidinci, Serbia in a laboratory vibration mill with rings for different periods of time are presented. The successive structural changes of the minerals were studied by X-ray diffraction analysis, DTA analysis, IR spectroscopy and particle size distribution. The reactivity changes were controlled by CEC. The starting material and the material mechanically treated for 30 min were sintered at several temperature and for different time periods examined by X-ray diffraction. Mechanical treatment by fine grinding of bentonite clay produces structural changes of the powdered material and influences its behavior in further processing steps in particular after thermal treatment.

Dependence of hot-carrier immunity on channel length and channel width in MOSFETs with N/sub 2/O-grown gate oxides

1992 ◽  
Vol 13 (12) ◽  
pp. 651-653 ◽  
Author(s):  
G.Q. Lo ◽  
J. Ahn ◽  
D.-L. Kwong ◽  
K.K. Young
Keyword(s):  
Channel Length ◽  
Channel Width ◽  
Gate Oxides ◽  
Hot Carrier

Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si/sub 3/N/sub 4/ MNSFETs

2001 ◽  
Vol 48 (4) ◽  
pp. 679-684 ◽  
Author(s):  
S. Mahapatra ◽  
V.R. Rao ◽  
B. Cheng ◽  
M. Khare ◽  
C.D. Parikh ◽  
...  
Keyword(s):  
Channel Length ◽  
Hot Carrier

Investigation of hot-carrier induced degradation in 0.1μm channel length n-MOSFET's

1993 ◽  
Vol 22 (1-4) ◽  
pp. 293-296 ◽  
Author(s):  
N. Revil ◽  
J.P. Miéville ◽  
S. Cristoloveanu ◽  
M. Dutoit ◽  
P. Mortini
Keyword(s):  
Channel Length ◽  
Hot Carrier

scholarly journals Laser assisted selective chemical metalization of Al2O3 films

2005 ◽  
Vol 3 (4) ◽  
pp. 668-673
Author(s):  
Emil Krumov ◽  
Dimitar Popov ◽  
Nikolay Starbov
Keyword(s):  
Thermal Evaporation ◽  
Chemical Deposition ◽  
Ceramic Surface ◽  
Ceramic System ◽  
X Ray ◽  
Deposited Metal ◽  
Metal Ceramic ◽  
Selective Chemical ◽  
Processing Steps ◽  
Al2o3 Films

AbstractThick aluminum oxide films are prepared on Al plates by anodizing. On the ceramic surface thus obtained a very thin Ag film is deposited via vacuum thermal evaporation. The Ag/Al2O3/Al samples prepared are irradiated by Nd:YAG laser through a suitable metal mask in order to remove the top metal film in the exposed areas. Thus, a negative silver image of the copied mask is obtained. Further, the samples are processed in Ni electroless chemical bath activated by the rest of silver. All processing steps are studied by scanning electron microscopy (SEM). EDS X-ray mapping is applied to study the final distribution of Al and Ni in the processed areas. In addition, the DC conductivity of the fabricated Ni wires obtained is measured. The proposed new method for selective chemical deposition of electroconductive Ni onto laser microstructured Ag/Al2O3/Al samples is simple, versatile and not restricted to the metal/ceramic system studied as well as to the electroless deposited metal.

Dimensional Quantification of Embedded Voids or Objects in Three Dimensions Using X-Ray Tomography

2012 ◽  
Vol 18 (2) ◽  
pp. 390-398 ◽  
Author(s):  
Brian M. Patterson ◽  
Juan P. Escobedo-Diaz ◽  
Darcie Dennis-Koller ◽  
Ellen Cerreta
Keyword(s):  
Digital Imaging ◽  
Three Dimensional ◽  
Three Dimensions ◽  
Post Processing ◽  
X Ray ◽  
Individual Object ◽  
Starting Point ◽  
X Ray Computed ◽  
The Individual ◽  
Processing Steps

AbstractScientific digital imaging in three dimensions such as when using X-ray computed tomography offers a variety of ways to obtain, filter, and quantify data that can produce vastly different results. These opportunities, performed during image acquisition or during the data processing, can include filtering, cropping, and setting thresholds. Quantifying features in these images can be greatly affected by how the above operations are performed. For example, during binarization, setting the threshold too low or too high can change the number of objects as well as their measured diameter. Here, two facets of three-dimensional quantification are explored. The first will focus on investigating the question of how many voxels are needed within an object to have accurate geometric statistics that are due to the properties of the object and not an artifact of too few voxels. These statistics include but are not limited to percent of total volume, volume of the individual object, Feret shape, and surface area. Using simple cylinders as a starting point, various techniques for smoothing, filtering, and other processing steps can be investigated to aid in determining if they are appropriate for a specific desired statistic for a real dataset. The second area of investigation is the influence of post-processing, particularly segmentation, on measuring the damage statistics in high purity Cu. The most important parts of the pathways of processing are highlighted.

Selective Growth of Heteroepitaxial GexSi1−x/Si Lateral Wells Using Pulsed Laser Induced Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
Yih Chang ◽  
J. Kramer ◽  
S. Y. Chou ◽  
T. W. Sigmon ◽  
A. F. Marshall
Keyword(s):  
Surface Defects ◽  
Pulsed Laser ◽  
Semiconductor Processing ◽  
X Ray ◽  
Transmission Electron ◽  
X Ray Imaging ◽  
Different Dimensions ◽  
Significant Line ◽  
First Time ◽  
Processing Steps

ABSTRACTPatterned GexSi1−x/Si wells are fabricated for the first time by pulsed laser induced epitaxy technique, employing two different semiconductor processing steps to grow these structures selectively. Two different dimensions of Gt0.12 Si0.55 /Si wells are sucessfully formed, in which one is 3.5 μm wide and 1700Å deep while another is 6 μm wide and 1300Å deep. Transmission electron microscopy combined with energy-dispersive X-ray imaging reveals that the 2-D Ge redistribution profiles are well defined and no significant line or surface defects observed. The 2-D Ge well redistribution behavior, governed by heat and mass transport during laser processing, are also discussed.

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