scholarly journals Laser assisted selective chemical metalization of Al2O3 films

2005 ◽  
Vol 3 (4) ◽  
pp. 668-673
Author(s):  
Emil Krumov ◽  
Dimitar Popov ◽  
Nikolay Starbov
Keyword(s):  
Thermal Evaporation ◽  
Chemical Deposition ◽  
Ceramic Surface ◽  
Ceramic System ◽  
X Ray ◽  
Deposited Metal ◽  
Metal Ceramic ◽  
Selective Chemical ◽  
Processing Steps ◽  
Al2o3 Films

AbstractThick aluminum oxide films are prepared on Al plates by anodizing. On the ceramic surface thus obtained a very thin Ag film is deposited via vacuum thermal evaporation. The Ag/Al2O3/Al samples prepared are irradiated by Nd:YAG laser through a suitable metal mask in order to remove the top metal film in the exposed areas. Thus, a negative silver image of the copied mask is obtained. Further, the samples are processed in Ni electroless chemical bath activated by the rest of silver. All processing steps are studied by scanning electron microscopy (SEM). EDS X-ray mapping is applied to study the final distribution of Al and Ni in the processed areas. In addition, the DC conductivity of the fabricated Ni wires obtained is measured. The proposed new method for selective chemical deposition of electroconductive Ni onto laser microstructured Ag/Al2O3/Al samples is simple, versatile and not restricted to the metal/ceramic system studied as well as to the electroless deposited metal.

High Temperature Chemical Interaction Between SSiC Substrates and Ag-Cu Based Liquid Alloys in Vacuo

2006 ◽  
Vol 509 ◽  
pp. 111-116 ◽  
Author(s):  
Jorge López-Cuevas ◽  
Juan Carlos Rendón-Angeles ◽  
J.L. Rodríguez-Galicia ◽  
M. Herrera-Trejo ◽  
J. Méndez-Nonell
Keyword(s):  
Electron Microscopy ◽  
Chemical Interaction ◽  
Silica Film ◽  
Liquid Alloys ◽  
Ceramic Surface ◽  
X Ray Diffraction ◽  
Metal Interface ◽  
X Ray ◽  
Metal Ceramic ◽  
Scanning Electron

The interfaces formed at 850 °C under vacuum between polished or oxidized substrates of pressureless sintered α-SiC (SSiC) and Cusil, Cusil-ABA and Incusil-ABA brazing alloys have been characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. No chemical interaction is observed for Cusil on both SSiC substrates. In contrast, the Ti contained in the Cusil-ABA and Incusil-ABA alloys promotes the occurrence of chemical reactions at the metal/ceramic interface with both SSiC substrates. The formation of TiC and Ti5Si3 is observed for Cusil-ABA and Incusil-ABA on untreated SSiC, following the sequence SiC → TiC → Ti5Si3 at the metal/ceramic interface. The formation of Ti5Si3 and Cu3Ti3O, following the sequence SiC → Ti5Si3 → Cu3Ti3O, is observed for both Ti-containing alloys on pre-oxidized SSiC. During the wetting experiments, Ti5Si3 and Cu3Ti3O detach from the ceramic surface, floating away from the ceramic/metal interface into the liquid alloy, where the latter phase partially dissolves. It is concluded that for both Ti-containing alloys in contact with pre-oxidized SSiC, the Ti remaining after the reaction with the silica film is insufficient to decrease the contact angle to the values observed for untreated SSiC or to produce a strong metal/ceramic joint.

HREM and AEM study of Pt/SiC interface annealed at high temperature

1993 ◽  
Vol 51 ◽  
pp. 832-833
Author(s):  
J.S. Bow ◽  
L.M. Porter ◽  
M.J. Kim ◽  
R.W. Carpenter ◽  
R.F. Davis
Keyword(s):  
High Temperature ◽  
Image Data ◽  
Amorphous Layer ◽  
Atomic Resolution ◽  
Ceramic Surface ◽  
High Temperature Annealing ◽  
Ion Milling ◽  
Ceramic System ◽  
Residual Oxygen ◽  
Metal Ceramic

High temperature applications of SiC semiconductor devices will be essentially limited by the metal/SiC interface interconnect properties. Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. Some work on the Pt/SiC interface has been conducted by AES and other low spatial resolution surface techniques, but there is no detailed direct image data reported. Here, we characterize the microstructure of the Pt/SiC interface after high temperature annealing in UHV at near atomic resolution and reported the first nanospectroscopic energy loss data for the system.As-deposited Pt film is polycrystalline with grain size of 10 ± 3 nm (Fig.l). The thin amorphous layer visible at the interface in Fig.l, gradually disappearing in the thick regions, was attributed to oxygen-induced ion-milling damage. Similar results were observed frequently in other metal/ceramic system. We consider the amorphous layer to be due to residual oxygen on the ceramic surface during synthesis, since trace oxygen was only detected at the as-deposited Pt/6H-SiC interface.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

SEM Characterization of Silicon Layers Grown on Carbon Foil

2009 ◽  
Vol 156-158 ◽  
pp. 473-476 ◽  
Author(s):  
Sergei K. Brantov ◽  
A.V. Eltzov ◽  
Olga V. Feklisova ◽  
Eugene B. Yakimov
Keyword(s):  
Dislocation Density ◽  
Defect Structure ◽  
Growth Direction ◽  
Carbon Foil ◽  
Twin Boundaries ◽  
X Ray ◽  
Electron Backscattering Diffraction ◽  
Silicon Ribbon ◽  
Selective Chemical

Characterization of defect structure in silicon ribbon grown on carbon foil has been carried out. The structure of grown Si layers and a dislocation density in these layers have been studied using selective chemical etching and the Electron Backscattering Diffraction. It is observed that the layers consist of rather large grains, the majority of which is elongated along the growth direction with a similar surface orientation and with a misorientation angle between neighboring grains of 60º. This means that such grains are separated by the (111) twin boundaries. The dislocation density in different grains is found to vary from 102 to 107cm-2. The energy dispersive X-Ray microanalysis has shown that some twin boundaries are enriched with carbon.

Measurement of Plasticity Gradients with Scanning Probe Microscopy

1993 ◽  
Vol 318 ◽  
Author(s):  
James D. Kiely ◽  
Dawn A. Bonnell
Keyword(s):  
Fracture Surface ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Ceramic System ◽  
Force Microscopy ◽  
Metal Fracture ◽  
Atomic Force ◽  
Metal Ceramic

ABSTRACTScanning Tunneling and Atomic Force Microscopy were used to characterize the topography of fractured Au /sapphire interfaces. Variance analysis which quantifies surface morphology was developed and applied to the characterization of the metal fracture surface of the metal/ceramic system. Fracture surface features related to plasticity were quantified and correlated to the fracture energy and energy release rate.

Prebrazing of Ceramics by Plasma Spraying for Metal-Ceramic Joining

1998 ◽  
Author(s):  
A. Kara-Slimane ◽  
D. Treheux
Keyword(s):  
Plasma Spraying ◽  
Ceramic Surface ◽  
Interface Analysis ◽  
Residual Oxygen ◽  
Metal Ceramic ◽  
Brazed Joint

Abstract Traditionnal brazing ailoys does not wet ceramic and therefore are unusable for metal ceramic bonding. To overcome this problem, we have pre-metallized different ceramics (AI2O3, AIN, SiAION) by plasma spraying of copper on ceramics. The good wettability of AgCu or AgCuTi alloy on so-coated ceramics is explained by effect of residual oxygen at interface which favours the thermodynamic adhesion during brazing. The interface analysis showed that silver or titanium segregation occurs at ceramic surface and that, conversely, sprayed copper diffuses in the brazed joint

High Conductivity FIB Deposited Metal

1995 ◽  
Vol 396 ◽  
Author(s):  
P.G. Blauner ◽  
A. Wagner
Keyword(s):  
Focused Ion Beam ◽  
High Efficiency ◽  
Ion Beam ◽  
Deposition Process ◽  
Gold Deposition ◽  
X Ray ◽  
Annealing Step ◽  
Deposited Metal ◽  
Major Application ◽  
Deposition Processes

AbstractThe ion beam induced metal deposition processes now employed by commercial focused ion beam (FIB) tools all demonstrate less than optimal characteristics for use in circuit repair, a major application of these tools. In particular, the processes have low efficiencies, the metals produced have poor conductivity, and some form of clean up is generally required to remove excess material surrounding the repair site. The gold deposition process developed for x-ray mask repair, in contrast, exhibits efficiencies 10-50 times higher with significantly less material deposited in unwanted areas. Unfortunately, the conductivity of the gold is even poorer than that of materials now used for FIB circuit repair.In this paper, an annealing step which improves the conductivity of FIB deposited Au is described. Results are presented demonstrating resistivities of 5-15 μΩ-cm while maintaining the high efficiency of the gold deposition process. The suitability of the process for use in FIB circuit repair is discussed.

scholarly journals Sub-100-nm Pattern Formation through Selective Chemical Transformation of Self-Assembled Monolayers by Soft X-ray Irradiation

Langmuir ◽  
2004 ◽  
Vol 20 (16) ◽  
pp. 6964-6964 ◽  
Author(s):  
Young-Hye La ◽  
Yu Jin Jung ◽  
Hyun Ju Kim ◽  
Tai-Hee Kang ◽  
Kyuwook Ihm ◽  
...  
Keyword(s):  
Pattern Formation ◽  
Chemical Transformation ◽  
Self Assembled Monolayers ◽  
X Ray ◽  
Assembled Monolayers ◽  
Selective Chemical ◽  
Self Assembled

scholarly journals Влияние режима получения образцов и термообработки на локальную структуру халькогенидного полупроводника Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=-

2022 ◽  
Vol 56 (3) ◽  
pp. 291
Author(s):  
С.Н. Гарибова ◽  
А.И. Исаев ◽  
С.И. Мехтиева ◽  
С.У. Атаева ◽  
Р.И. Алекперов
Keyword(s):  
Heat Treatment ◽  
Thermal Processing ◽  
Thermal Evaporation ◽  
Amorphous State ◽  
Hexagonal Structure ◽  
Structural Elements ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Matrix ◽  
Close Range

Specifics of "amorphous state - crystal" phase transitions in dependence on the samples obtaining method and thermal processing, as well as changes in the structure and close range order in the arrangement of the atoms of Ge20Sb20.5Te51 chalcogenide semiconductors have been studied by the x-ray diffraction and Raman spectroscopy. It has been shown that Ge20Sb20.5Te51 films obtained by thermal evaporation on an unheated substrate are amorphous; after heat treatment at 220 and 400 °C, transform into a crystalline phase with a cubic and hexagonal structure. The chemical bonds and the main structural elements that form the matrix of the investigated objects, as well as the changes that occur in them during heat treatment, have been determined.

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