Differences of Damage Production in GaAs and InP after MeV and Low Energy Ion Implantation

1993 ◽  
Vol 300 ◽  
Author(s):  
E. Wendler ◽  
T. Bachmann ◽  
W. Wesch
Keyword(s):  
Ion Implantation ◽  
Energy Loss ◽  
Nuclear Energy ◽  
Room Temperature ◽  
Energy Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Critical Value ◽  
Low Energy ◽  
Optical Measurements ◽  
Defect Annealing

ABSTRACTIon implantation induced damage production in GaAs and InP is investigated using Rutherford backscattering spectrometry in combination with channeling techniques and near-edge optical measurements. 200 keV and 1.6 MeV Ar+ ions are implanted at room temperature in GaAs and InP with ion doses varying between 2 × 1012 cm−2 and 3 × 1015 cm−2. Our results show that InP behaves similar for the two implantation energies and no influence of energy loss in electronic processes is found. In GaAs in the region of maximum nuclear energy deposition almost no difference in the damage production occurs for the two implantation energies. But for 1.6 MeV Ar+ implantation within the first 500 nm the defect concentration is very low in comparison to the nuclear energy deposition, which may be the consequence of ionizationinduced defect annealing and/or of the fact that in this depth region the amount of nuclear energy deposition is less than a critical value being necessary for the production of heavily damaged and amorphous zones.

scholarly journals Low-energy room-temperature optical switching in mixed-dimensionality nanoscale perovskite heterojunctions

2021 ◽  
Vol 7 (18) ◽  
pp. eabf1959
Author(s):  
Ji Hao ◽  
Young-Hoon Kim ◽  
Severin N. Habisreutinger ◽  
Steven P. Harvey ◽  
Elisa M. Miller ◽  
...  
Keyword(s):  
Optical Switching ◽  
Room Temperature ◽  
Optical Memory ◽  
Low Energy ◽  
Optical Measurements ◽  
Ion Migration ◽  
Metal Halide Perovskite ◽  
Conductance Changes ◽  
Optical Domain ◽  
Walled Carbon Nanotubes

Long-lived photon-stimulated conductance changes in solid-state materials can enable optical memory and brain-inspired neuromorphic information processing. It remains challenging to realize optical switching with low-energy consumption, and new mechanisms and design principles giving rise to persistent photoconductivity (PPC) can help overcome an important technological hurdle. Here, we demonstrate versatile heterojunctions between metal-halide perovskite nanocrystals and semiconducting single-walled carbon nanotubes that enable room-temperature, long-lived (thousands of seconds), writable, and erasable PPC. Optical switching and basic neuromorphic functions can be stimulated at low operating voltages with femto- to pico-joule energies per spiking event, and detailed analysis demonstrates that PPC in this nanoscale interface arises from field-assisted control of ion migration within the nanocrystal array. Contactless optical measurements also suggest these systems as potential candidates for photonic synapses that are stimulated and read in the optical domain. The tunability of PPC shown here holds promise for neuromorphic computing and other technologies that use optical memory.

scholarly journals Ion-Irradiation-Induced Densification of Zirconia Sol -Gel Thin Films

1993 ◽  
Vol 316 ◽  
Author(s):  
Timothy E. Levine ◽  
Emmanuel P. Giannelis ◽  
Padma Kodali ◽  
Joseph Tesmer ◽  
Michael Nastasi ◽  
...  
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Sol Gel ◽  
Electronic Energy ◽  
Target Atom ◽  
Recoil Energy ◽  
Ion Energies ◽  
Sol Gel Films

ABSTRACTWe have investigated the densification behavior of sol-gel zirconia films resulting from ion irradiation. Three sets of films were implanted with neon, krypton, or xenon. The ion energies were chosen to yield approximately constant energy loss through the film and the doses were chosen to yield similar nuclear energy deposition. Ion irradiation of the sol-gel films resulted in carbon and hydrogen loss as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Although the densification was hypothesized to result from target atom displacement, the observed densification exhibits a stronger dependence on electronic energy deposition.

Low Temperature Oxidation of Silicon After Copper Ion Implantation

1995 ◽  
Vol 398 ◽  
Author(s):  
E.J. Jaquez ◽  
T.L. Alford ◽  
N.D. Theodore ◽  
D. Adams ◽  
Jian Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Copper Ion ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Silicon Oxide Layer ◽  
Moving Interface ◽  
Transmission Electron

ABSTRACTSilicon oxide films ( > 1μm ) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiOx interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Photoemission Study of the Si, Ge Epitaxial Growth Process Using Surfactants

1992 ◽  
Vol 259 ◽  
Author(s):  
Xiaoyu Yang ◽  
Renyu Cao ◽  
Jeff Terry ◽  
Piero Pianetia
Keyword(s):  
Free Energy ◽  
Growth Process ◽  
Room Temperature ◽  
Energy Deposition ◽  
Low Energy ◽  
Heteroepitaxial Growth ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Photoemission Study

ABSTRACTHeteroepitaxial growth of Ge on Si(100) and Si on Ge(100) surfaces with Sb as a surfactant has been investigated by in situ high resolution photoemission and low energy electron diffraction (LEED). Our results show that an ordered monolayer of Sb atoms saturate the surface dangling bonds and consequently lower the surface free energy. Deposition of Ge or Si on the Sb/Si(100) or Sb/Ge(100) surfaces either at room temperature, followed by mild annealing or deposition at elevated temperature, result in an epitaxial layer of Ge or Si on the substrate, respectively. We provide clear experimental evidence that the deposited Ge or Si atoms changes position with the surface Sb atoms in this process. Ge or Si atoms occupy the epitaxial sites previously occupied by the Sb atoms. The Sb atoms in turn segregate to the surface and form a new ordered layer. The Bi-assisted growth process is also discussed.

Defect annealing in ion implanted silicon carbide

1997 ◽  
Vol 12 (7) ◽  
pp. 1727-1733 ◽  
Author(s):  
L. Calcagno ◽  
M. G. Grimaldi ◽  
P. Musumeci
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Optical Measurements ◽  
Temperature Range ◽  
Damage Degree ◽  
Defect Annealing ◽  
Initial Damage ◽  
Lattice Damage ◽  
Amorphous States ◽  
Ion Implanted

The recovery of lattice damage in ion implanted 6H-SiC single crystals by thermal annealing has been investigated in the temperature range 200–1000 °C by Rutherford backscattering spectrometry-channeling and by optical measurements in the UV-visible wavelength. The damage was produced by implantation at room temperature of 60 keV N+ at fluences between 1014 and 5 × 1015 ions/cm2. At low fluences a partially damaged layer with defects distributed over a depth comparable to the projected ion range was obtained. At higher fluences a continuous amorphous layer was formed. The defect annealing behavior depended on the initial damage morphology: an almost total defect recovery occurred in partially damaged layers with kinetics depending on the initial damage degree. If the defect concentration is smaller than 20 at.% the annealing rate is independent of temperature. Amorphous layers were stable in the investigated temperature range and no epitaxial regrowth occurred. After annealing, a strong change in the optical properties of the amorphous phase was observed indicating a recovery of the electronic properties of the material, suggesting the existence of several amorphous states and the relaxation of the amorphous that evolves toward thermodynamic states characterized by lower free energy values.

SUPPRESSION OF SILICON NANOSTRUCTURE GROWTH BY MEDIUM ENERGY NITROGEN ION IMPLANTATION

2004 ◽  
Vol 03 (04n05) ◽  
pp. 431-437
Author(s):  
V. J. KENNEDY ◽  
S. JOHNSON ◽  
A. MARKWITZ ◽  
M. RUDOLPHI ◽  
H. BAUMANN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Growth Control ◽  
Low Energy ◽  
Medium Energy ◽  
Nitrogen Ion Implantation ◽  
Silicon Nanostructure ◽  
Nitrogen Ion ◽  
Simple Technology ◽  
20 Nm

A novel nanofabrication technology to produce dense arrays of silicon nanowhiskers up to 20 nm high has been developed. This rapid and simple technology employs electron beam rapid thermal annealing (EB-RTA) of untreated silicon. Pre-implantation of the silicon substrate with nitrogen at low energy (5 keV) has been shown to suppress the formation of these nanostructures. In this paper we demonstrate identical silicon nanostructure growth suppression when produced following nitrogen ion implantation at 50 keV and 100 keV. Specimens were implanted at room temperature and subsequently annealed at 1000°C for 15 s (temperature gradient 5° Cs -1). Specific results obtained from AFM and NRA analysis are discussed highlighting the possibility of silicon nanowhisker growth control using nitrogen ion implantation.

Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

2005 ◽  
Vol 86 (16) ◽  
pp. 163111 ◽  
Author(s):  
M. Shalchian ◽  
J. Grisolia ◽  
G. Ben Assayag ◽  
H. Coffin ◽  
S. M. Atarodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Silicon Nanoparticles ◽  
Quantum Effect ◽  
Low Energy ◽  
Nanometer Scale
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