Room Temperature Formation of Si‐Nitride Films by Low Energy Nitrogen Ion Implantation into Silicon

1982 ◽  
Vol 129 (2) ◽  
pp. 379-383 ◽  
Author(s):  
R. Hezel ◽  
N. Lieske
2004 ◽  
Vol 03 (04n05) ◽  
pp. 431-437
Author(s):  
V. J. KENNEDY ◽  
S. JOHNSON ◽  
A. MARKWITZ ◽  
M. RUDOLPHI ◽  
H. BAUMANN ◽  
...  

A novel nanofabrication technology to produce dense arrays of silicon nanowhiskers up to 20 nm high has been developed. This rapid and simple technology employs electron beam rapid thermal annealing (EB-RTA) of untreated silicon. Pre-implantation of the silicon substrate with nitrogen at low energy (5 keV) has been shown to suppress the formation of these nanostructures. In this paper we demonstrate identical silicon nanostructure growth suppression when produced following nitrogen ion implantation at 50 keV and 100 keV. Specimens were implanted at room temperature and subsequently annealed at 1000°C for 15 s (temperature gradient 5° Cs -1). Specific results obtained from AFM and NRA analysis are discussed highlighting the possibility of silicon nanowhisker growth control using nitrogen ion implantation.


Wear ◽  
1999 ◽  
Vol 225-229 ◽  
pp. 1148-1158 ◽  
Author(s):  
A.V Byeli ◽  
V.A Kukareko ◽  
I.V Boyarenko ◽  
A.A Kolesnikova

2004 ◽  
Vol 96 (9) ◽  
pp. 4935-4938 ◽  
Author(s):  
I. Mahboob ◽  
T. D. Veal ◽  
C. F. McConville

2018 ◽  
Vol 14 (4) ◽  
pp. 488-498 ◽  
Author(s):  
Mukesh Mishra ◽  
Subbiah Alwarappan ◽  
Dinakar Kanjilal ◽  
Tanuja Mohanty

Sign in / Sign up

Export Citation Format

Share Document