scholarly journals Ion-Irradiation-Induced Densification of Zirconia Sol -Gel Thin Films

1993 ◽  
Vol 316 ◽  
Author(s):  
Timothy E. Levine ◽  
Emmanuel P. Giannelis ◽  
Padma Kodali ◽  
Joseph Tesmer ◽  
Michael Nastasi ◽  
...  
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Sol Gel ◽  
Electronic Energy ◽  
Target Atom ◽  
Recoil Energy ◽  
Ion Energies ◽  
Sol Gel Films

ABSTRACTWe have investigated the densification behavior of sol-gel zirconia films resulting from ion irradiation. Three sets of films were implanted with neon, krypton, or xenon. The ion energies were chosen to yield approximately constant energy loss through the film and the doses were chosen to yield similar nuclear energy deposition. Ion irradiation of the sol-gel films resulted in carbon and hydrogen loss as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Although the densification was hypothesized to result from target atom displacement, the observed densification exhibits a stronger dependence on electronic energy deposition.

Tribomechanical Properties of Ion-Beam-Densified Sol-Gel Zirconia Thin Films on Cubic Zirconia

1993 ◽  
Vol 308 ◽  
Author(s):  
Timothy E. Levine ◽  
Peter Revesz ◽  
James W. Mayer ◽  
Emmanuel P. Giannelis
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Sol Gel ◽  
Recoil Energy ◽  
Subsequent Decrease ◽  
Friction Measurements ◽  
Sol Gel Films ◽  
Carbon Losses ◽  
Tribomechanical Properties

ABSTRACTWe have investigated the tribomechanical properties of ion-beam-densified sol-gel zirconia overlayers on bulk zirconia. Ion irradiation of the sol-gel films leads to hydrogen, oxygen, and carbon losses as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Ellipsometry measurements show that the film thickness decreases with increasing dose. The microhardness exhibits an increase and subsequent decrease with dose. Friction measurements along with profilometry measurements indicate that severe abrasive wear of the film takes place in the first 1000 cycles after which point the substrate is in direct contact with the pin.

scholarly journals Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Amekura ◽  
M. Toulemonde ◽  
K. Narumi ◽  
R. Li ◽  
A. Chiba ◽  
...  
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Ion Irradiation ◽  
High Energy ◽  
Electronic Energy ◽  
Synergy Effect ◽  
Ion Tracks ◽  
Track Formation ◽  
Low Energies ◽  
High Energy Ions

AbstractDamaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of Se below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.

scholarly journals Investigating the Influence of Ion Species on the Irradiation-Induced Mechanical Properties of Borosilicate Glass

2021 ◽  
Vol 11 (8) ◽  
pp. 3473
Author(s):  
Yedong Guan ◽  
Peng Lv ◽  
Zuojiang Wang ◽  
Yuzhe Jiang ◽  
Zhao Sun ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Nuclear Energy ◽  
Energy Deposition ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Irradiation Effects ◽  
Maximum Decrease ◽  
The Mean ◽  
Ion Species

Investigating the irradiation effects on borosilicate glass is of great significance for understanding the long-term evolutions of this substance in radioactive environments. In the present study, the hardness and modulus of conventional and ion-irradiated borosilicate glass were investigated through nanoindentation measurements. The obtained results show that the maximum decrease of the mean hardness after He and Ar ion irradiation was 8.4% and 17.0%, respectively, when the fluence reached 1.1 × 1015. It was found that the hardness reduction had a significant ionic correlation. Meanwhile, it was observed that the mean modulus increased by less than 5.0%, while there was no meaningful ionic correlation. The variation in hardness and modulus were primarily the consequence of nuclear energy deposition. The hardness recovery was observed under Ar-irradiated and He-irradiated Ar pre-damaged samples. It was concluded that the hardness recovery mainly originates from electronic energy deposition induced by ion irradiation.

Differences of Damage Production in GaAs and InP after MeV and Low Energy Ion Implantation

1993 ◽  
Vol 300 ◽  
Author(s):  
E. Wendler ◽  
T. Bachmann ◽  
W. Wesch
Keyword(s):  
Ion Implantation ◽  
Energy Loss ◽  
Nuclear Energy ◽  
Room Temperature ◽  
Energy Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Critical Value ◽  
Low Energy ◽  
Optical Measurements ◽  
Defect Annealing

ABSTRACTIon implantation induced damage production in GaAs and InP is investigated using Rutherford backscattering spectrometry in combination with channeling techniques and near-edge optical measurements. 200 keV and 1.6 MeV Ar+ ions are implanted at room temperature in GaAs and InP with ion doses varying between 2 × 1012 cm−2 and 3 × 1015 cm−2. Our results show that InP behaves similar for the two implantation energies and no influence of energy loss in electronic processes is found. In GaAs in the region of maximum nuclear energy deposition almost no difference in the damage production occurs for the two implantation energies. But for 1.6 MeV Ar+ implantation within the first 500 nm the defect concentration is very low in comparison to the nuclear energy deposition, which may be the consequence of ionizationinduced defect annealing and/or of the fact that in this depth region the amount of nuclear energy deposition is less than a critical value being necessary for the production of heavily damaged and amorphous zones.

Patterning of LiNbO3 by means of ion irradiation using the electronic energy deposition and wet etching

2009 ◽  
Vol 86 (4-6) ◽  
pp. 910-912 ◽  
Author(s):  
Th. Gischkat ◽  
H. Hartung ◽  
F. Schrempel ◽  
E.B. Kley ◽  
A. Tünnermann ◽  
...  
Keyword(s):  
Energy Deposition ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Wet Etching

Shape deformation of colloidal titania nanoparticles by means of ion irradiation

2008 ◽  
Vol 1087 ◽  
Author(s):  
Juan-Carlos Cheang-Wong ◽  
Ana-Lilia Díaz-Fonseca
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Sol Gel ◽  
Sample Surface ◽  
Electronic Energy ◽  
Titania Nanoparticles ◽  
Direction Parallel ◽  
Titanium Butoxide ◽  
Before And After ◽  
Spherical Silica Particles

AbstractSpherical submicrometer-sized titanium dioxide (TiO2 or titania) particles were prepared by the sol-gel method from hydrolysis and condensation of titanium butoxide Ti(OC4H9)4 using ammonia as a catalyst in ethanol/acetonitrile and annealing in air at 100°C. Subsequently, they were deposited onto silicon substrates, in order to form a monolayer of TiO2 particles. Then these samples were irradiated at room temperature with Si2+ ions at 4, 6 and 8 MeV, with fluences in the 2×1014-2×1015 Si/cm2 range, under an angle of 45° with respect to the sample surface. The titania particles were characterized by scanning electron microscopy to determine their size and shape before and after the ion irradiation. After the Si irradiation the spherical silica particles turned into ellipsoidal particles, as a result of the increase of the particle dimension perpendicular to the ion beam and the decrease in the direction parallel to the ion beam. This deformation effect increases monotonically with the ion fluence, and depends on the electronic energy loss of the impinging ion.

scholarly journals Enhancement of Ammonia Sensitivity in Swift Heavy Ion Irradiated NanocrystallineSnO2Thin Films

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Sanju Rani ◽  
Somnath C. Roy ◽  
N. K. Puri ◽  
M. C. Bhatnagar ◽  
D. Kanjilal
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Energy Levels ◽  
Sol Gel ◽  
Heavy Ion ◽  
High Energy ◽  
Electronic Energy ◽  
Response Characteristics ◽  
Swift Heavy Ion

Swift heavy ion irradiation is an effective technique to induce changes in the microstructure and electronic energy levels of materials leading to significant modification of properties. Here we report enhancement of ammonia (NH3) sensitivity ofSnO2thin films subjected to high-energyNi+ion irradiation. Sol-gel-derivedSnO2thin films (100 nm thickness) were exposed to 75 MeVNi+ion irradiation, and the gas response characteristics of irradiated films were studied as a function of ion fluence. The irradiated films showedp-type conductivity with a much higher response toNH3compared to other gases such as ethanol. The observed enhancement ofNH3sensitivity is discussed in context of ion beam generated electronic states in theSnO2thin films.

Computer Simulation of Channeling Effects in Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
Matthias Posselt
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Crystalline Silicon ◽  
Electronic Energy ◽  
Maximum Penetration Depth ◽  
Two Factors ◽  
Radiation Induced ◽  
Maximum Penetration ◽  
Amorphous Surface ◽  
Higher Doses

ABSTRACTOur binary collision code Crystal-TRIM is applied to simulate 1 MeV P+ implantation into single-crystalline silicon at ion incidence into the [100] axial channel direction and doses between 2 × 1013 cm−2 and 6.7 × 1014 cm−2. The maximum penetration depth of the ions is determined by the electronic stopping of the well-channeled particles. The shape of the range distributions depends on (i) the thin amorphous surface layer on silicon, (ii) the radiation-induced production of vacancies and interstitials, and (iii) the static atomic disorder due to electronic energy deposition. The comparison of experimental data with results of computer simulations shows that at low doses at least the influence of the first two factors has to be considered. At higher doses the radiation damage due to nuclear energy deposition dominates the other effects.

Sol-gel synthesis of textured lanthanum titanate thin films

2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Optical Measurements ◽  
Layered Perovskite ◽  
Orientation Factor ◽  
Anisotropic Structures ◽  
Sol Gel Films ◽  
Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

Sign in / Sign up

Export Citation Format

Share Document