Low Temperature Oxidation of Silicon After Copper Ion Implantation

1995 ◽  
Vol 398 ◽  
Author(s):  
E.J. Jaquez ◽  
T.L. Alford ◽  
N.D. Theodore ◽  
D. Adams ◽  
Jian Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Copper Ion ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Silicon Oxide Layer ◽  
Moving Interface ◽  
Transmission Electron

ABSTRACTSilicon oxide films ( > 1μm ) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiOx interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Dynamic Behavior of a Silicon Oxide Layer on Silicon Ultrafine Particles

2003 ◽  
Vol 10 (02n03) ◽  
pp. 361-364
Author(s):  
Yuki Kimura ◽  
Hiroshi Ueno ◽  
Hitoshi Suzuki ◽  
Takeshi Sato ◽  
Toshiaki Tanigaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxide Layer ◽  
Ultrafine Particles ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Silicon Oxide Layer ◽  
Transmission Electron ◽  
Natural Oxide ◽  
High Temperature Stage ◽  
Amorphous Silicon Oxide

In order to clarify the high-temperature behavior of a silicon oxide layer on the surface of Si ultrafine particles, the oxide layer has been studied using the atomic-resolution high-temperature stage of a transmission electron microscope. The natural oxide layer grown on Si ultrafine particles by exposure to air was an amorphous silicon oxide layer with a thickness of 1.5 nm. This oxide layer started to dissolve into the Si crystal upon heating at 500°C, and was fully dissolved into the Si crystal at 600°C in vacuum. When the specimen was cooled back to room temperature, the silicon oxide layer reappeared on the Si surface. This phenomenon, which can be detected only at high temperatures, is presented in this paper.

Room temperature ultraviolet emission from ZnO nanocrystallites fabricated by the low temperature oxidation of metallic Zn precursors

2003 ◽  
Vol 127 (1) ◽  
pp. 21-24 ◽  
Author(s):  
Tae-Won Kim ◽  
Tadashi Kawazoe ◽  
Shunsuke Yamazaki ◽  
Jungsik Lim ◽  
Takashi Yatsui ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Low Temperature Oxidation ◽  
Ultraviolet Emission ◽  
Temperature Oxidation

Room Temperature Damage, Annealing and Dislocation Growth in Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
R.G. Elliman ◽  
I.V. Mitchell
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Primary Defect ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Sensitive Function ◽  
Temperature Damage

AbstractThe concentration of residual defects produced by self ion implantation of silicon has been shown to be a sensitive function of implantation temperature at temperatures near room temperature. In this study samples were heated to temperatures of 20°C and 60°C and implanted with 540 keV Si ions to a fluence of 2x1015Si.cm-2 using a constant scanned ion flux of 0.2 μA.cm-2. The resultant primary defect concentrations, measured by Rutherford backscattering spectrometry and channelling (RBS-C), were 2.3±0.1x1022 cm-l and 1.8±0.2x1021 cm-3, respectively, i.e. a reduction by a factor of σ13 for a temperature increase of 40°C. Such differences were not evident in the concentration of secondary defects formed by annealing these samples at 900°C for 15 minutes: the defect concentrations were equal within the experimental uncertainties of the RBS-C and transmission electron microscopy (TEM) measurements. This result appears to lead to the surprising conclusion that the number of displaced atoms that survive high temperature annealing to form extended defects is largely independent of the dynamic annealing processes operating during implantation but depends instead on parameters which scale with the ion fluence.

Effects of N2O Fluence on the PECVD-grown Si-rich SiOx with Buried Si Nanocrystals

2005 ◽  
Vol 862 ◽  
Author(s):  
Chun-Jung Lin ◽  
Hao-Chung Kuo ◽  
Chia-Yang Chen ◽  
Yu-Lun Chueh ◽  
Li-Jen Chou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Annealing Process ◽  
Room Temperature Photoluminescence ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
20 Nm ◽  
Oxidation Effect

AbstractThe optimized N2O fluence is demonstrated for plasma enhanced chemical vapor deposition (PECVD) of Si-rich substoichiometric silicon oxide (SiOx) films with buried Si nanocrystals. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx films grown by PECVD under a constant SiH4 fluence of 20 sccm with an N2O fluence varying from 105 sccm to 130 sccm. A 22-nm-redshift in the central PL wavelength has been detected after annealing from 15 min to 180 min. The maximum PL irradiance is observed from the SiOx film grown at the optimal N2O fluence of 120 sccm after annealing for 30 minutes. Larger N2O fluence or longer annealing time leads to a PL band that is blue-shifted by 65 nm and 20 nm, respectively. Such a blue shift is attributed to shrinkage in the size of the Si nanocrystals with the participation of oxygen atoms from N2O incorporated within the SiOx matrix. The (220)-oriented Si nanocrystals exhibit radii ranging from 4.4 nm to 5.0 nm as determined by transmission electron microscopy (TEM). The luminescent lifetime lengthens to 52 μs as the nc-Si size increase to > 4 nm. Optimal annealing times for SiOx films prepared at different N2O fluences are also reported. A longer annealing process results in a stronger oxidation effect in SiOx films prepared at higher N2O fluences, yielding a lower PL irradiance at shorter wavelengths. In contrast, larger Si nanocrystals can be precipitated when the N2O fluence becomes lower; however, such a SiOx film usually exhibits weaker PL at longer wavelength due to a lower nc-Si density. These results indicate that a N2O/SiH4 fluence ratio of 6:1 is the optimized PECVD growth condition for the Si-rich SiO2 wherein dense Si nanocrystals are obtained after annealing.

Humidity related magnetite alteration in an experimental setup

2020 ◽  
Vol 224 (1) ◽  
pp. 69-85
Author(s):  
Qi Zhang ◽  
Erwin Appel ◽  
Helge Stanjek ◽  
James M Byrne ◽  
Christoph Berthold ◽  
...  
Keyword(s):  
Room Temperature ◽  
Atmospheric Conditions ◽  
Low Temperature Oxidation ◽  
Surface Layers ◽  
Entire Volume ◽  
Temperature Oxidation ◽  
Lattice Constants ◽  
Dry Conditions ◽  
Low Humidity ◽  
Mössbauer Analysis

SUMMARY Low-temperature oxidation (LTO) of magnetite is an alteration process which occurs under normal atmospheric conditions, causing maghemitization. The use of magnetic properties as palaeoclimate proxies requires improved understanding of how humidity and temperature affect such processes. We exposed natural magnetite, with grain size ranging from <1 to ∼30 μm, to different humidity conditions at room temperature and 70 °C for 1 yr. Changes in room temperature setups were very minor, but in all 70 °C setups alteration was detected by magnetic and mineralogical properties. Lowering of the Verwey transition temperature (Tv) turned out to be the most sensitive indicator of LTO, and also lattice constants correlate well with the shift of Tv. Thermomagnetic curves and XRD-results indicate that LTO affects the entire volume of the particles rather than only surface layers. The sample exposed to high relative humidity (rH) >90  per cent at 70 °C showed the strongest degree of LTO with an increase of the oxidation degree by ∼3 per cent according to Tv, and it was the only setup where partial alteration to hematite was indicated by Mössbauer analysis. The sample with extremely dry conditions (rH of ∼5 per cent) at 70 °C, and the sample that was exposed to cycles of high and low humidity in 2-weeks alternation at 70 °C, both revealed a smaller degree of LTO. The smallest change of the high temperature setups was observed for the sample with intermediate rH of ∼13 per cent. The results suggest a non-linear sensitivity of magnetite alteration to humidity conditions, high humidity strongly favours alteration, but alteration is strongly reduced when extreme humidity alternates with dry conditions, suggesting an importance of seasonality in natural weathering.

Differences of Damage Production in GaAs and InP after MeV and Low Energy Ion Implantation

1993 ◽  
Vol 300 ◽  
Author(s):  
E. Wendler ◽  
T. Bachmann ◽  
W. Wesch
Keyword(s):  
Ion Implantation ◽  
Energy Loss ◽  
Nuclear Energy ◽  
Room Temperature ◽  
Energy Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Critical Value ◽  
Low Energy ◽  
Optical Measurements ◽  
Defect Annealing

ABSTRACTIon implantation induced damage production in GaAs and InP is investigated using Rutherford backscattering spectrometry in combination with channeling techniques and near-edge optical measurements. 200 keV and 1.6 MeV Ar+ ions are implanted at room temperature in GaAs and InP with ion doses varying between 2 × 1012 cm−2 and 3 × 1015 cm−2. Our results show that InP behaves similar for the two implantation energies and no influence of energy loss in electronic processes is found. In GaAs in the region of maximum nuclear energy deposition almost no difference in the damage production occurs for the two implantation energies. But for 1.6 MeV Ar+ implantation within the first 500 nm the defect concentration is very low in comparison to the nuclear energy deposition, which may be the consequence of ionizationinduced defect annealing and/or of the fact that in this depth region the amount of nuclear energy deposition is less than a critical value being necessary for the production of heavily damaged and amorphous zones.

Processing of rare earth doped GaN with ion beams

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Lorenz ◽  
U. Wahl ◽  
E. Alves ◽  
T. Wojtowicz ◽  
P. Ruterana ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Defects ◽  
Site Location ◽  
Transmission Electron ◽  
Infra Red ◽  
Optical Activation ◽  
Rare Earth Doped

ABSTRACTGaN epilayers grown by MOCVD were implanted with different fluences of thulium at room temperature and at 500 °C in order to find the optimum implantation conditions. Rutherford backscattering spectrometry in the channeling mode was used to monitor the damage evolution in the Ga-sublattice and to establish the lattice site location of the thulium ions. The nature of structural defects was studied with transmission electron microscopy and the optical properties of the samples with room temperature cathodoluminescence. The introduced damage could be significantly reduced by implantation at high temperature for fluences up to 5×1015 Tm/cm2. Annealing was necessary for optical activation of the implanted samples, in all cases. After annealing, sharp rare earth related emissions were observed in the blue and in the near infra-red spectral region.

scholarly journals Embedment of ZnO nanoparticles in SiO2 by ion implantation and low-temperature oxidation

2007 ◽  
Vol 90 (8) ◽  
pp. 083102 ◽  
Author(s):  
H. Amekura ◽  
N. Umeda ◽  
H. Boldyryeva ◽  
N. Kishimoto ◽  
Ch. Buchal ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Zno Nanoparticles ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Effect of Iodine and Strontium Ion Implantation on the Microstructure of Cubic Zirconia

2000 ◽  
Vol 647 ◽  
Author(s):  
Sha Zhu ◽  
Lumin Wang ◽  
Shixin Wang ◽  
Rodney C. Ewing
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Orientation Relation ◽  
Cross Sectional ◽  
Peak Displacement ◽  
Defect Clusters ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
The Matrix ◽  
Strontium Ion

Abstract200 keV iodine and 400 keV strontium ions have been implanted into YSZ in order to study the effects of fission product incorporation in YSZ as an inert fuel matrix. The ion implantation was conducted at room temperature. The ion fluences reached 1×1021 ions/m2 which gives peak displacement damage levels of ~ 290 dpa for I ion implantation and ~ 200 dpa for Sr ion implantation. The peak concentration reaches ~26 at. % for implanted I ions and ~11.6 at.% for Sr ions. Cross-sectional transmission electron microscopy (TEM) was completed to investigate the microstructure changes caused by the implantation. No evidence of amorphization was detected in both samples although a high density of defect clusters was observed by TEM. Cross-sectional TEM revealed formation of iodine containing voids in I- implanted samples and crystalline precipitates of a few tens of nanometers in Sr-implanted samples after annealing of the implanted sample at 1000°C for 0.5 to 2 hours. The void size increased with increasing annealing time. The nano-crystalline precipitates in Sr-implanted YSZ are isometric SrZrO3 (a≅0.41 nm). The orientation relation between the matrix and precipitates, as determined by selected area diffraction pattern, was: [011]YSZ// [111]SrZrO3 and [200]YSZ// [110]SrZrO3.

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