Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
P.A. Stolk ◽  
A.J.M. Berntsen ◽  
F.W. Saris ◽  
W.F. Van Der Weg
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Long Range ◽  
Structural Relaxation ◽  
Carrier Lifetime ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Treatments ◽  
Hydrogen Passivation ◽  
Hydrogenated Amorphous

This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps after 1 MeV Si+ implantation to doses exceeding 1014/cm2. A comparison with relaxed a-Si suggests that damage generation in a-Si:H merely arises from displacements in the silicon network. Annealing of ion-damaged a-Si:H at 200-500 °C recovers the carrier lifetime to 60-100 ps as a result of hydrogen passivation of electrical defects. However, Raman spectroscopy shows that hydrogen does not significantly enhance long-range network relaxations during annealing. This implies that thermal treatments of ion-implanted a-Si:H can not fully recover the as-deposited state.

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

LONG-RANGE FLUCTUATIONS OF RANDOM POTENTIAL LANDSCAPE AS A MECHANISM OF 1/f NOISE IN HYDROGENATED AMORPHOUS SILICON

2005 ◽  
Vol 05 (03) ◽  
pp. L443-L456
Author(s):  
BORIS V. FINE ◽  
JEROEN P. R. BAKKER ◽  
JAAP I. DIJKHUIS
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Noise Intensity ◽  
Broad Class ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Noise Spectrum ◽  
Current Flows ◽  
Charged Defects ◽  
Hydrogenated Amorphous

We describe a mechanism that links the long-range potential fluctuations induced by charged defects to the low-frequency resistance noise widely known as 1/fnoise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon ( a-Si:H ) under the condition that current flows perpendicular to the plane of the films, and have found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects.

Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

2000 ◽  
Vol 77 (17) ◽  
pp. 2686-2688 ◽  
Author(s):  
Hyeonsik M. Cheong ◽  
Se-Hee Lee ◽  
Brent P. Nelson ◽  
Angelo Mascarenhas ◽  
Satyen K. Deb
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
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