scholarly journals Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon

2003 ◽  
Author(s):  
Boris V. Fine ◽  
Jeroen P. R. Bakker ◽  
Jaap I. Dijkhuis
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Random Potential ◽  
Hydrogenated Amorphous Silicon ◽  
Potential Landscape ◽  
Hydrogenated Amorphous

LONG-RANGE FLUCTUATIONS OF RANDOM POTENTIAL LANDSCAPE AS A MECHANISM OF 1/f NOISE IN HYDROGENATED AMORPHOUS SILICON

2005 ◽  
Vol 05 (03) ◽  
pp. L443-L456
Author(s):  
BORIS V. FINE ◽  
JEROEN P. R. BAKKER ◽  
JAAP I. DIJKHUIS
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Noise Intensity ◽  
Broad Class ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Noise Spectrum ◽  
Current Flows ◽  
Charged Defects ◽  
Hydrogenated Amorphous

We describe a mechanism that links the long-range potential fluctuations induced by charged defects to the low-frequency resistance noise widely known as 1/fnoise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon ( a-Si:H ) under the condition that current flows perpendicular to the plane of the films, and have found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects.

Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

2000 ◽  
Vol 77 (17) ◽  
pp. 2686-2688 ◽  
Author(s):  
Hyeonsik M. Cheong ◽  
Se-Hee Lee ◽  
Brent P. Nelson ◽  
Angelo Mascarenhas ◽  
Satyen K. Deb
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
P.A. Stolk ◽  
A.J.M. Berntsen ◽  
F.W. Saris ◽  
W.F. Van Der Weg
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Long Range ◽  
Structural Relaxation ◽  
Carrier Lifetime ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Treatments ◽  
Hydrogen Passivation ◽  
Hydrogenated Amorphous

This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps after 1 MeV Si+ implantation to doses exceeding 1014/cm2. A comparison with relaxed a-Si suggests that damage generation in a-Si:H merely arises from displacements in the silicon network. Annealing of ion-damaged a-Si:H at 200-500 °C recovers the carrier lifetime to 60-100 ps as a result of hydrogen passivation of electrical defects. However, Raman spectroscopy shows that hydrogen does not significantly enhance long-range network relaxations during annealing. This implies that thermal treatments of ion-implanted a-Si:H can not fully recover the as-deposited state.

Thermopower and Conductivity Activation Energies in Hydrogenated Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
H. M. Dyalsingh ◽  
J. Kakalios
Keyword(s):  
Activation Energy ◽  
Amorphous Silicon ◽  
Long Range ◽  
Short Circuit ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Activation Energies ◽  
Thermoelectric Effects ◽  
Hydrogenated Amorphous ◽  
Fluctuation Model

AbstractThe long range fluctuation model has been widely used to account for the difference in activation energies seen experimentally in dark conductivity and thermopower measurements in hydrogenated amorphous silicon. We report on a test of this model using measurements of the conductivity and thermoelectric effects carried out in both open and short circuit configurations. While the thermopower activation energy is less than that of the dark conductivity, the short circuit Seebeck conductivity is found to be nearly identical to the dark conductivity in both activation energy and magnitude, consistent with the long range fluctuation model.

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