Formation of bulk unipolar diodes in hydrogenated amorphous silicon by ion implantation

2001 ◽  
Vol 22 (11) ◽  
pp. 536-538 ◽  
Author(s):  
E.G. Gerstner ◽  
T.W.D. Cheong ◽  
J.M. Shannon
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
P.A. Stolk ◽  
A.J.M. Berntsen ◽  
F.W. Saris ◽  
W.F. Van Der Weg
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Long Range ◽  
Structural Relaxation ◽  
Carrier Lifetime ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Treatments ◽  
Hydrogen Passivation ◽  
Hydrogenated Amorphous

This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps after 1 MeV Si+ implantation to doses exceeding 1014/cm2. A comparison with relaxed a-Si suggests that damage generation in a-Si:H merely arises from displacements in the silicon network. Annealing of ion-damaged a-Si:H at 200-500 °C recovers the carrier lifetime to 60-100 ps as a result of hydrogen passivation of electrical defects. However, Raman spectroscopy shows that hydrogen does not significantly enhance long-range network relaxations during annealing. This implies that thermal treatments of ion-implanted a-Si:H can not fully recover the as-deposited state.

Nucleation in Amorphous Si:H Alloy

1988 ◽  
Vol 100 ◽  
Author(s):  
Y. C. Koo ◽  
A. R. Perrin ◽  
K. T. Aust ◽  
S. Zukotynski
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Neutron Irradiation ◽  
Amorphous Material ◽  
Hydrogenated Amorphous Silicon ◽  
Neutron Radiation ◽  
Preliminary Results ◽  
Hydrogenated Amorphous ◽  
Microcrystalline Material

ABSTRACTA method of producing microcrystalline material from thin films of hydrogenated amorphous silicon was investigated. Exposure to gamma and neutron radiation, and silicon self ion implantation were used to induce nucleation in the amorphous material. According to the preliminary results, neutron irradiation represents a most promising method for promoting crystallization.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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