Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

2000 ◽  
Vol 77 (17) ◽  
pp. 2686-2688 ◽  
Author(s):  
Hyeonsik M. Cheong ◽  
Se-Hee Lee ◽  
Brent P. Nelson ◽  
Angelo Mascarenhas ◽  
Satyen K. Deb
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

scholarly journals Temperature-Dependent Open-Circuit Voltage Measurements and Light-Soaking in Hydrogenated Amorphous Silcon Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Jianjun Liang ◽  
E. A. Schiff ◽  
S. Guha ◽  
B. Yan ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Illumination Intensity ◽  
Temperature Dependent ◽  
Defect Generation ◽  
Hydrogenated Amorphous

AbstractWe present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.

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