Influence of deposition conditions on long-range electronic disorder inn-type doped hydrogenated amorphous silicon

1999 ◽  
Vol 60 (4) ◽  
pp. 2449-2455 ◽  
Author(s):  
D. Quicker ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

LONG-RANGE FLUCTUATIONS OF RANDOM POTENTIAL LANDSCAPE AS A MECHANISM OF 1/f NOISE IN HYDROGENATED AMORPHOUS SILICON

2005 ◽  
Vol 05 (03) ◽  
pp. L443-L456
Author(s):  
BORIS V. FINE ◽  
JEROEN P. R. BAKKER ◽  
JAAP I. DIJKHUIS
Keyword(s):  
Amorphous Silicon ◽  
Long Range ◽  
Noise Intensity ◽  
Broad Class ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Noise Spectrum ◽  
Current Flows ◽  
Charged Defects ◽  
Hydrogenated Amorphous

We describe a mechanism that links the long-range potential fluctuations induced by charged defects to the low-frequency resistance noise widely known as 1/fnoise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon ( a-Si:H ) under the condition that current flows perpendicular to the plane of the films, and have found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects.

Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Sakuma ◽  
H. Nozaki ◽  
T. Niiyama ◽  
H. Ito
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Other ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

ABSTRACTThe ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.

Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions

2003 ◽  
Vol 762 ◽  
Author(s):  
T. J. Belich ◽  
S. Thompson ◽  
C.R. Perrey ◽  
U. Kortshagen ◽  
C.B. Carter ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Dark Conductivity ◽  
Capacitively Coupled ◽  
Silicon Thin Films ◽  
High Resolution Tem ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

AbstractThin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions (a/nc-Si:H) have been synthesized in an RF capacitively coupled PECVD system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the plasma. High resolution TEM confirms the presence of nanocrystallites as small as 2 nm in these films. Measurements of the optical absorption spectrum using CPM and PDS indicates a broadening of the Urbach slope in the a/nc-Si:H, compared to a-Si:H films, but no appreciable increase in midgap absorption. Despite the deposition conditions for the a/nc-Si:H being very different from those associated with producing optimal quality a-Si:H, the dark conductivity and photoconductivity values, and the sensitivity to light-induced defect creation in the a/nc-Si:H films are comparable to those in a-Si:H.

Influence of Deposition Conditions on the 1/f Noise in Hydrogenated Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
P. W. West ◽  
D. Quicker ◽  
H. M. Dyalsingh ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Infrared Absorption Spectroscopy ◽  
Mobility Edge ◽  
Thermal Equilibration ◽  
The Difference ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

ABSTRACTThe electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 Å/s to 33 Å/s have been studied. Infrared absorption spectroscopy shows an increase in S1-H2 content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

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