Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon

1998 ◽  
Vol 72 (1) ◽  
pp. 103-105 ◽  
Author(s):  
R. Rapaport ◽  
Y. Lubianiker ◽  
I. Balberg ◽  
L. Fonseca
Keyword(s):  
Amorphous Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Hydrogenated Amorphous Silicon ◽  
Minority Carrier Lifetime ◽  
Hydrogenated Amorphous

Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
L.F. Fonseca ◽  
S.Z. Weisz ◽  
R. Rapaport ◽  
I. Balberg
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Thermal Quenching ◽  
Minority Carrier Lifetime ◽  
Dangling Bond ◽  
Recent Letter ◽  
Recombination Centers ◽  
Spectroscopic Tool ◽  
Hydrogenated Amorphous ◽  
Effect Of Light

AbstractIn a recent letter we have reported the first observation of the phenomenon of minority carrier-lifetime sensitization in hydrogenated amorphous silicon (a-Si:H). We find now that combining the study of this phenomenon with the study of the well-known phenomenon of majority carrier lifetime sensitization, in this material, can provide direct information on its density of states (DOS) distribution. This finding is important in view of the limitations associated with other methods designed for the same purpose. We have carried out then an experimental study of the effect of light soaking on the phototransport in a-Si:H. We found that the increase of the dangling bond concentration with light soaking affects the sensitization and thermal quenching of the majority carriers lifetime. Using computer simulations, we further show that the details of the observations associated with the sensitization effect yield semiquantitative information on the concentration and character of the recombination centers in a-Si:H.

Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
P.A. Stolk ◽  
A.J.M. Berntsen ◽  
F.W. Saris ◽  
W.F. Van Der Weg
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Long Range ◽  
Structural Relaxation ◽  
Carrier Lifetime ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Treatments ◽  
Hydrogen Passivation ◽  
Hydrogenated Amorphous

This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps after 1 MeV Si+ implantation to doses exceeding 1014/cm2. A comparison with relaxed a-Si suggests that damage generation in a-Si:H merely arises from displacements in the silicon network. Annealing of ion-damaged a-Si:H at 200-500 °C recovers the carrier lifetime to 60-100 ps as a result of hydrogen passivation of electrical defects. However, Raman spectroscopy shows that hydrogen does not significantly enhance long-range network relaxations during annealing. This implies that thermal treatments of ion-implanted a-Si:H can not fully recover the as-deposited state.

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