Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD

1994 ◽  
Vol 299 ◽  
Author(s):  
Wang-Nang Wang ◽  
Chia Ho ◽  
Jee-Ming Shiue
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Process Optimization ◽  
Hydrogen Plasma ◽  
Wet Etching ◽  
Low Energy ◽  
High Quality ◽  
Plasma Excitation ◽  
Abrupt Junction

AbstractHigh quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.

Plasma Etching of Copper Films Using IR Light Irradiation

1994 ◽  
Vol 337 ◽  
Author(s):  
N. Hosoi ◽  
Y. Ohshita
Keyword(s):  
Low Temperature ◽  
Flow Rate ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Light Irradiation ◽  
Copper Films ◽  
Gas Flow Rate ◽  
Line Patterns ◽  
Ir Light

ABSTRACTCopper films are etched at a low temperature of 60 °C using a Cl2 plasma etching method with IR light irradiation. The etch rate is as high as 1 μm/min. The anisotropic Cu line patterns are obtained independent of the Cl2 gas flow rate and the etching pressure conditions. Moreover, there is no corrosion on the etched sample.

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

2007 ◽  
Vol 556-557 ◽  
pp. 133-136 ◽  
Author(s):  
Huang De Lin ◽  
Galyna Melnychuk ◽  
Jeffery L. Wyatt ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Nitrogen Concentration ◽  
Aluminum Concentration ◽  
Silicon Cluster ◽  
Vapor Species ◽  
Aluminum Doping ◽  
Homoepitaxial Growth ◽  
Order Of Magnitude

Low-temperature epitaxial growth of 4H-SiC with CH3Cl carbon precursor was further developed. In-situ doping with nitrogen and aluminum was investigated. The nitrogen concentration in epitaxial layers grown on the C face was almost two orders of magnitude higher than that in the Si-face epilayers grown in the same growth run at 13000C. The opposite trend was observed for intentional aluminum doping, with more than an order of magnitude higher aluminum concentration incorporated in Si-face epilayers. High values of nitrogen and aluminum doping well in excess of 1020 cm-3 without any obvious epilayer morphology degradation can be achieved on C-face and Siface respectively. Addition of HCl during halo-carbon growth at 13000C resulted in drastic improvement of the surface morphology. Also, a significant increase of the growth rate took place confirming that the improvement in the epilayer morphology during HCl-assisted growth is predominantly related to silicon cluster etching by additional Cl-containing vapor species.

Etching of polymers in microwave/radio-frequency O2–CF4 plasma

1991 ◽  
Vol 69 (3-4) ◽  
pp. 202-206 ◽  
Author(s):  
B. Lamontagne ◽  
O. M. Küttel ◽  
M. R. Wertheimer
Keyword(s):  
Radio Frequency ◽  
Plasma Etching ◽  
Etch Rate ◽  
Marked Effect ◽  
Polymer Structure ◽  
Rf Plasma ◽  
Self Bias ◽  
Microwave Radio ◽  
Commercial Polymers ◽  
Second Peak

We have studied O2–CF4 plasma etching of commercial polymers, particularly KaptonR polyimide, using a reactor in which the plasma can be excited by radio-frequency (rf, 13.56 MHz), microwave power (MW, 2.45 GHz), or mixed frequency (MW/rf) excitation. For the case of rf plasma etching of polyimide, a marked effect of dc self-bias voltage Vb on the etch rate R has been observed; Vb is found to vary systematically with pressure and with CF4 concentration in the etch gas, [CF4]. Beside the well-documented maximum in R at low-[CF4] values, the measurement of ion flux allows us to attribute a second peak in R (near [CF4] = 65%) to ion bombardment. We also report observations regarding the dependence of R on polymer structure.

In Situ Spectroscopic Ellipsometry for the Real Time Process Control of Plasma Etching of Silicon Nitride

1999 ◽  
Vol 591 ◽  
Author(s):  
I. G. Rosen ◽  
T. Parent ◽  
B. Fidan ◽  
A. Madhukar
Keyword(s):  
Silicon Nitride ◽  
Real Time ◽  
Plasma Etching ◽  
Spectroscopic Ellipsometry ◽  
Etch Rate ◽  
Polarization State ◽  
Non Invasive ◽  
Silicon Nitride Films ◽  
In Situ Sensor

ABSTRACTSpectroscopic ellipsometry (SE) is a commonly used non-destructive, non-invasive in-situ sensor for dry etching. SE measures the change in the polarization state of light reflected from a surface. Sample thickness is obtained by fitting a model to the experimental ellipsometry data. In this paper we describe the design, testing and evaluation of an SE based adaptive real time feedback controller for etch rate regulation in CF4/O2 plasma etching of silicon nitride films. The feedback variable is the current etch rate as determined from the in-situ SE measurements of the film's thickness. The controller compensates for drifts in etch rate which occur during a given etch, and adaptively adjusts for the run-to-run variability inherent to plasma processing. Experimental results are presented and discussed.

Low-Temperature Homoepitaxial Growth of Gan Using Hyperthermal Molecular Beams

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Michel ◽  
E. Chen ◽  
D. Thomson ◽  
O. Nam ◽  
R. F. Davis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Desorption ◽  
Molecular Beams ◽  
Smooth Surfaces ◽  
Carbon Removal ◽  
Surface Carbon ◽  
Homoepitaxial Growth ◽  
Supersonic Molecular Beams

ABSTRACTIn situ cleaning of MOCVD-grown GaN/AlN/6H-SiC substrates using NH3-seeded supersonic molecular beams was investigated. Removal of surface carbon and oxygen contaminants was achieved by heating at 730°C under a hyperthermal NH 3 beam. Oxygen is removed primarily by thermal desorption; however, carbon removal requires an NH3 flux. Atomically smooth surfaces with regular steps are obtained after NH3 beam cleaning. Homoepitaxial growth of smooth, highly textured GaN films was accomplished at 700°C by employing a 0.61-eV NH3 beam and an effusive Ga source.

A Dual-Function Uhv-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures

1993 ◽  
Vol 303 ◽  
Author(s):  
S. Hattangady ◽  
X-L Xu ◽  
M.J. Watkins ◽  
B. Hornung ◽  
V. Misra ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Chemical Vapor ◽  
Dual Function ◽  
Low Temperature Plasma ◽  
Interface Formation ◽  
Temperature Plasma ◽  
Oxide Heterostructures ◽  
Mos Devices

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.

Plasma Etching and Surface Analysis of a-SiC:H Films Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 334 ◽  
Author(s):  
J. H. Thomas ◽  
M. J. Loboda ◽  
J. A. Seifferly
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Plasma Etching ◽  
Integrated Circuit ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Auger Analysis ◽  
Temperature Plasma ◽  
Amorphous Hydrogenated Silicon

AbstractOrganosilicon precursors were used to deposit thin films of highly stable amorphous hydrogenated silicon carbide at low temperatures by plasma enhanced chemical vapor deposition. X-ray photoemission and Auger electron spectroscopy were employed to characterize the surface chemistry of air exposed and plasma etched films. Auger analysis of the as-deposited material shows its composition to be constant throughout its depth. RF plasma etching was performed in CF4/O2 and SF6/O2 gas mixtures. Etch rates in these atmospheres are similar to those reported in the literature. After plasma etching, the surface was converted to a highly fluorinated state. In addition to the expected SiC bond, Si-OF bonds were found after plasma etching. Fluorocarbon residue was not produced in this process. Chlorine etching of this low temperature PECVD film is described and is shown to be compatible with standard integrated circuit manufacture processing as an hermetic-like sealant.

A Dual-Function UHV-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Hattiangady ◽  
X-L Xu ◽  
M.J. Watkins ◽  
B. Hornung ◽  
V. Misra ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Chemical Vapor ◽  
Dual Function ◽  
Low Temperature Plasma ◽  
Interface Formation ◽  
Temperature Plasma ◽  
Oxide Heterostructures ◽  
Mos Devices

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.

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