Low-Temperature Homoepitaxial Growth of Gan Using Hyperthermal Molecular Beams

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Michel ◽  
E. Chen ◽  
D. Thomson ◽  
O. Nam ◽  
R. F. Davis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Desorption ◽  
Molecular Beams ◽  
Smooth Surfaces ◽  
Carbon Removal ◽  
Surface Carbon ◽  
Homoepitaxial Growth ◽  
Supersonic Molecular Beams

ABSTRACTIn situ cleaning of MOCVD-grown GaN/AlN/6H-SiC substrates using NH3-seeded supersonic molecular beams was investigated. Removal of surface carbon and oxygen contaminants was achieved by heating at 730°C under a hyperthermal NH 3 beam. Oxygen is removed primarily by thermal desorption; however, carbon removal requires an NH3 flux. Atomically smooth surfaces with regular steps are obtained after NH3 beam cleaning. Homoepitaxial growth of smooth, highly textured GaN films was accomplished at 700°C by employing a 0.61-eV NH3 beam and an effusive Ga source.

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

2001 ◽  
Vol 494 (1) ◽  
pp. 28-42 ◽  
Author(s):  
A.J. McGinnis ◽  
D. Thomson ◽  
R.F. Davis ◽  
E. Chen ◽  
A. Michel ◽  
...  
Keyword(s):  
Molecular Beams ◽  
Surface Dynamics ◽  
Homoepitaxial Growth ◽  
Supersonic Molecular Beams

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

Low-temperature thermal reduction of graphene oxide: In situ correlative structural, thermal desorption, and electrical transport measurements

2018 ◽  
Vol 112 (5) ◽  
pp. 053103 ◽  
Author(s):  
Alexey Lipatov ◽  
Maxime J.-F. Guinel ◽  
Dmitry S. Muratov ◽  
Vladislav O. Vanyushin ◽  
Peter M. Wilson ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Low Temperature ◽  
Thermal Desorption ◽  
Electrical Transport ◽  
Thermal Reduction ◽  
Transport Measurements

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

2007 ◽  
Vol 556-557 ◽  
pp. 133-136 ◽  
Author(s):  
Huang De Lin ◽  
Galyna Melnychuk ◽  
Jeffery L. Wyatt ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Nitrogen Concentration ◽  
Aluminum Concentration ◽  
Silicon Cluster ◽  
Vapor Species ◽  
Aluminum Doping ◽  
Homoepitaxial Growth ◽  
Order Of Magnitude

Low-temperature epitaxial growth of 4H-SiC with CH3Cl carbon precursor was further developed. In-situ doping with nitrogen and aluminum was investigated. The nitrogen concentration in epitaxial layers grown on the C face was almost two orders of magnitude higher than that in the Si-face epilayers grown in the same growth run at 13000C. The opposite trend was observed for intentional aluminum doping, with more than an order of magnitude higher aluminum concentration incorporated in Si-face epilayers. High values of nitrogen and aluminum doping well in excess of 1020 cm-3 without any obvious epilayer morphology degradation can be achieved on C-face and Siface respectively. Addition of HCl during halo-carbon growth at 13000C resulted in drastic improvement of the surface morphology. Also, a significant increase of the growth rate took place confirming that the improvement in the epilayer morphology during HCl-assisted growth is predominantly related to silicon cluster etching by additional Cl-containing vapor species.

Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

1997 ◽  
Vol 482 ◽  
Author(s):  
E. Chen ◽  
S. Zhang ◽  
A. Michel ◽  
R. F. Davis ◽  
H. H. Lamb
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Kinetic Energy ◽  
Molecular Beams ◽  
Concomitant Increase ◽  
Limited Growth ◽  
Modest Increase ◽  
Homoepitaxial Growth ◽  
Supersonic Molecular Beams ◽  
Incorporation Efficiency

AbstractHomoepitaxial growth of GaN on MOCVD-grown GaN/AlN/6H-SiC substrates was investigated using NH3-seeded supersonic molecular beams and an effusive Ga source. Ga-limited growth is observed at 730 and 770°C for incident Ga fluxes ≤ 1.2×1015 cm−2 s−1 using a 0.25 eV NH3 beam. A Ga incorporation efficiency of 20–25% is observed under these conditions. Increasing NH3 kinetic energy in the 0.25 to 0.61 eV range results in a modest increase in the GaN growth rate which we ascribe to an enhancement in NH3 reactivity. A concomitant increase in surface roughness is observed with increasing GaN growth rate.

Low temperature silicon epitaxy using supersonic molecular beams

1995 ◽  
Vol 150 ◽  
pp. 984-988 ◽  
Author(s):  
Rajeev Malik, ◽  
Erdogan Gulari ◽  
Shin Hwa Li ◽  
Palla K. Bhattacharya ◽  
Jasprit Singh
Keyword(s):  
Low Temperature ◽  
Molecular Beams ◽  
Silicon Epitaxy ◽  
Supersonic Molecular Beams

Low Temperature Annealing of Rh (111) Surfaces

1996 ◽  
Vol 440 ◽  
Author(s):  
Frank Tsui ◽  
Joanne Wellman ◽  
Junhao Xu ◽  
Ctirad Uher ◽  
Roy Clarke
Keyword(s):  
Low Temperature ◽  
Temperature Stability ◽  
High Energy ◽  
Scanning Tunneling ◽  
Initial Surface ◽  
Tunneling Microscopy ◽  
Homoepitaxial Growth ◽  
Low Temperature Annealing ◽  
Kinetics Of

AbstractWe have studied smoothing kinetics of Rh (111) surfaces during low temperature annealing using in-situ real-time reflection high energy electron diffraction and scanning tunneling microscopy. The initial surface features were produced by low temperature homoepitaxial growth of Rh (111). Two types of surfaces were studied, surfaces with two-dimensional (2D) islands at submonolayer coverages, and those with 3D multilayered features. 2D islands coarsen rapidly at the onset of the anneal. 3D features are more stable initially. Their annealing process exhibits a distinct transition from an initial slow coarsening, characterized by a nearly linear growth of lateral size, to a rapid flattening. The activation energy for the transition is ˜ 0.6 eV. The observed behavior indicates that the smoothing kinetics in the low temperature regime is limited by adatom detachment from the step-edges, and that the fast process for the 3D features is made possible by the formation of a network of “chain-like” structures which provide new pathways for diffusion thus overcoming the slow detachment kinetics. These effects determine the low temperature stability of the non-equilibrium epitaxial morphologies.

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