Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD

1994 ◽  
Vol 299 ◽  
Author(s):  
Wang-Nang Wang ◽  
Chia Ho ◽  
Jee-Ming Shiue
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Process Optimization ◽  
Hydrogen Plasma ◽  
Wet Etching ◽  
Low Energy ◽  
High Quality ◽  
Plasma Excitation ◽  
Abrupt Junction

AbstractHigh quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

Low-Temperature Fabrication (≤150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment

2020 ◽  
Vol 2 (10) ◽  
pp. 3320-3326
Author(s):  
Taewon Seo ◽  
Hyuk Park ◽  
Gilsu Jeon ◽  
Juyoung Yun ◽  
Seongmin Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Hydrogen Plasma ◽  
Oxide Thin Film ◽  
High Quality

A low temperature in-situ crystalline TiNi shape memory thin film deposited by magnetron sputtering

2015 ◽  
Vol 284 ◽  
pp. 90-93 ◽  
Author(s):  
Hikmet Cicek ◽  
Ihsan Efeoglu ◽  
Yaşar Totik ◽  
Kadri Vefa Ezirmik ◽  
Ersin Arslan
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Shape Memory

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
H. Temkin ◽  
L. R. Harriott ◽  
J. Weiner ◽  
R. A. Hamm ◽  
M. B. Panish
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Low Energy ◽  
High Quality ◽  
Lithography Process ◽  
Luminescence Efficiency ◽  
Surface Steps ◽  
Inp Substrates ◽  
Vacuum Lithography

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

Possibility of Low Temperature Growth of YBCO Thin Film by Low Energy Ion Assisted Deposition

1993 ◽  
pp. 1001-1004
Author(s):  
Masao Noma ◽  
Masami Nakasone ◽  
Soichi Ogawa ◽  
Tsutom Yotsuya ◽  
Yoshihiko Suzuki
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Energy ◽  
Ybco Thin Film ◽  
Temperature Growth ◽  
Low Temperature Growth

High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor

2002 ◽  
Vol 41 (Part 1, No. 6A) ◽  
pp. 3646-3650 ◽  
Author(s):  
Seiichiro Higashi ◽  
Daisuke Abe ◽  
Yasushi Hiroshima ◽  
Kazuyuki Miyashita ◽  
Takahiro Kawamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Interface Formation ◽  
High Quality ◽  
Si Thin Film

Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

1997 ◽  
Vol 296 (1-2) ◽  
pp. 133-136 ◽  
Author(s):  
L. Pichon ◽  
F. Raoult ◽  
K. Mourgues ◽  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Flat Panel
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