Etching of polymers in microwave/radio-frequency O2–CF4 plasma

1991 ◽  
Vol 69 (3-4) ◽  
pp. 202-206 ◽  
Author(s):  
B. Lamontagne ◽  
O. M. Küttel ◽  
M. R. Wertheimer
Keyword(s):  
Radio Frequency ◽  
Plasma Etching ◽  
Etch Rate ◽  
Marked Effect ◽  
Polymer Structure ◽  
Rf Plasma ◽  
Self Bias ◽  
Microwave Radio ◽  
Commercial Polymers ◽  
Second Peak

We have studied O2–CF4 plasma etching of commercial polymers, particularly KaptonR polyimide, using a reactor in which the plasma can be excited by radio-frequency (rf, 13.56 MHz), microwave power (MW, 2.45 GHz), or mixed frequency (MW/rf) excitation. For the case of rf plasma etching of polyimide, a marked effect of dc self-bias voltage Vb on the etch rate R has been observed; Vb is found to vary systematically with pressure and with CF4 concentration in the etch gas, [CF4]. Beside the well-documented maximum in R at low-[CF4] values, the measurement of ion flux allows us to attribute a second peak in R (near [CF4] = 65%) to ion bombardment. We also report observations regarding the dependence of R on polymer structure.

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

scholarly journals Uses of radio emission spectroscopy for non-contact and in situ diagnostics of low pressure radio frequency plasma processing

2021 ◽  
Author(s):  
Rajani K. Vijayaraghavan ◽  
Sean Kelly ◽  
David Coates ◽  
Cezar Gaman ◽  
Niall MacGearailt ◽  
...  
Keyword(s):  
Radio Emission ◽  
Radio Frequency ◽  
Emission Spectroscopy ◽  
Near Field ◽  
Plasma Processing ◽  
Diagnostic Technique ◽  
Primary Source ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Rf Plasma

Abstract We demonstrate that a passive non-contact diagnostic technique, radio emission spectroscopy (RES), provides a sensitive monitor of currents in a low pressure radio frequency (RF) plasma. A near field magnetic loop antenna was used to capture RF emissions from the plasma without perturbing it. The analysis was implemented for a capacitively coupled RF plasma with an RF supply at a frequency of 13.56 MHz. Real-time measurements are captured in scenarios relevant to contemporary challenges faced during semiconductor fabrication (e.g. window coating and wall disturbance). Exploration of the technique for key equipment parameters including applied RF power, chamber pressure, RF bias frequencies and chamber wall cleanliness shows sensitive and repeatable function. In particular, the induced RES signal was found to vary sensitively to pressure changes and we were able to detect pressure and power variations as low as ~2.5 %/mtorr and ~3.5 %/watt, respectively, during the plasma processing during a trial generic plasma process. Finally, we explored the ability of RES to monitor the operation of a multiple frequency low-pressure RF plasma system (f1 = 2 MHz, f2 = 162 MHz) and intermixing products which suggests strongly that the plasma sheaths are the primary source of this non-linear diode mixing effect.

scholarly journals Concept Study of Radio Frequency (RF) Plasma Thruster for Space Propulsion

2016 ◽  
Vol 8 (4) ◽  
pp. 15-27
Author(s):  
ANDREESCU Anna-Maria Theodora ◽  
◽  
TEODORESCU Maximilian-Vlad ◽  
POPESCU Jeni Alina ◽  
VILAG Valeriu-Alexandru ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Rf Plasma ◽  
Space Propulsion ◽  
Concept Study ◽  
Plasma Thruster

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

2000 ◽  
Vol 657 ◽  
Author(s):  
Junting Liu ◽  
Nikolay I. Nemchuk ◽  
Dieter G. Ast ◽  
J. Gregory Couillard
Keyword(s):  
Plasma Etching ◽  
Glass Ceramic ◽  
Etch Rate ◽  
Glass Ceramics ◽  
Similar Rate ◽  
Optical Mems ◽  
Glass Substrates ◽  
Rate Limiting Step ◽  
Green Glass ◽  
Etched Surface

ABSTRACTMicro-machined transparent components are of interest for optical MEMS and miniaturized biological systems. The glass ceramic GC6 developed by Corning is optically transparent, has a softening point in excess of 900°C, and a thermal expansion coefficient matched to silicon. These properties make it useful for the construction of devices that combine thin film silicon electronics with MEMS systems.Both the ceramic precursor (green glass) and the glass ceramic etch at a similar rate, about 1/3 to 1/4 of that of SiO2 etched under the same conditions, indicating that chemistry rather than microstructure control the etch rate. The cleaning steps used to clean the glass precursor profoundly influence the degree of surface roughness that develops during subsequent plasma etching. In glass ceramics, the morphology of plasma etched surface is always very smooth and independent of the cleaning steps used. Assuming that the removal of spinel crystals is the rate limiting step in plasma etching glass ceramics can explain this observation.

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

2021 ◽  
Vol 39 (5) ◽  
pp. 053002
Author(s):  
Clint D. Frye ◽  
Scott B. Donald ◽  
Catherine Reinhardt ◽  
Lars F. Voss ◽  
Sara E. Harrison
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Carrier Wafer
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