A Dual-Function Uhv-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.