Use of Selective Area Defect Creation for Isolation of III-V Multilayer Structures

1992 ◽  
Vol 262 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
T. R. Fullowan ◽  
A. Katz ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Deep Level ◽  
Multilayer Structures ◽  
Hopping Conduction ◽  
Long Wavelength ◽  
Ternary Compounds ◽  
Optical Isolation ◽  
Selective Area ◽  
Defect Creation ◽  
Deep Level Acceptor

ABSTRACTDeep level acceptor and donor centers are created in III-V materials by energetic ion bombardments. The controlled introduction of these centers by selective area implantation can be used to provide electrical and optical isolation of neighbouring devices. We will contrast the implant isolation characteristics of GaAs and AlGaAs with materials such as InP and InGaAs, and also with the ternary compounds InGaP and AllnP, for which there has previously been little information. In all of these materials the as implanted resistivity is controlled by hopping conduction processes, with p « e×p (T 0.25). Post-implant annealing can be used to achieve resistivities of > 108 Ωcm in initially highly doped material provided the implant doses are correctly chosen. These defect engineered regions may be made many microns deep by using overlapping multiple-energy keV implants or a single MeV implant. In the latter case a nearly flat damage profile can be achieved over depths typical of HBT, SEED or long-wavelength laser epitaxial thicknesses. Examples of these devices which rely on controlled introduction of deep level defects for their operation will be given.

Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures

2001 ◽  
Vol 90 (5) ◽  
pp. 2252-2256 ◽  
Author(s):  
E. Thor ◽  
M. Mühlberger ◽  
L. Palmetshofer ◽  
F. Schäffler
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Multilayer Structures ◽  
Transient Spectroscopy

Space charge capacitance study of GaP/Si multilayer structure grown by plasma deposition

2021 ◽  
Author(s):  
Alexander Gudovskikh ◽  
Artem Baranov ◽  
Alexander V. Uvarov ◽  
Dmitrii Kudryashov ◽  
Jean Paul Kleider
Keyword(s):  
Space Charge ◽  
Deep Level ◽  
Plasma Deposition ◽  
Schottky Barriers ◽  
Multilayer Structures ◽  
Internal Electric Field ◽  
Conduction Band Offset ◽  
Transient Spectroscopy ◽  
Charge Capacitance

Abstract Microcrystalline GaP/Si multilayer structures grown on GaP substrates using combination of PE-ALD for GaP and PECVD for Si layers deposition are studied by three main space charge capacitance techniques: C-V profiling, admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS), which have been used on Schottky barriers formed on the GaP/Si multilayer structures. C-V profiling qualitatively demonstrates an electron accumulation in the Si/GaP wells. However, quantitative determination of the concentration and spatial position of its maximum is limited by the strong frequency dependence of the capacitance caused by electron capture/emission processes in/from the Si/GaP wells. These processes lead to signatures in AS and DLTS with activation energies equal to 0.39±0.05 eV and 0.28±0.05 eV, respectively, that are linked to the energy barrier at the GaP/Si interface. It is shown that the value obtained by AS (0.39±0.05 eV) is related to the response from Si/GaP wells located in the quasi-neutral region of the Schottky barrier, and it corresponds to the conduction band offset at the GaP/Si interface, while DLTS rather probes wells located in the space charge region closer to the Schottky interface where the internal electric field yields to a lowering of the effective barrier in the Si/GaP wells. Two additional signatures were detected by DLTS, which are identified as defect levels in GaP. The first one is associated to the SiGa+VP complex, while the second was already detected in single microcrystalline GaP layers grown by PE-ALD.

scholarly journals Сдвиг инфракрасных спектров поглощения и излучения ионов переходных металлов в твердых растворах полупроводниковых соединений

2021 ◽  
Vol 47 (12) ◽  
pp. 46
Author(s):  
С.В. Найденов
Keyword(s):  
Solid Solution ◽  
Theoretical Model ◽  
Solid Solutions ◽  
Transition Metal Ions ◽  
Infrared Range ◽  
Wavelength Shift ◽  
Mid Infrared ◽  
Long Wavelength ◽  
Ternary Compounds ◽  
Semiconductor Compounds

A universal theoretical model explaining the effect of the shift of absorption and emission bands of transition metal ions in solid solutions of semiconductor compounds is proposed. By the example of ternary compounds Zn1-xMgxSe:Cr2+ and Cd1-xMnxTe:Fe2+, an estimate of the typical parameters of the long-wavelength shift of absorption and luminescence in the mid-infrared range with increasing of concentration of solid solution is performed. A generalization of the effect to the case of multicomponent solid solutions is considered.

Precipitation of hydrogen in crystalline silicon

1988 ◽  
Vol 46 ◽  
pp. 476-477
Author(s):  
F. A. Ponce ◽  
N. M. Johnson
Keyword(s):  
Electrical Activity ◽  
Single Crystals ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Shallow Donor ◽  
Time Intervals ◽  
Shallow Acceptor ◽  
Optical Isolation ◽  
Direct Exposure

The behavior of hydrogen in semiconductors has been a topic of increasing interest in recent years. The interest is in part stimulated by the ability of hydrogen to remove the electrical activity (passivate) of both dopant impurities and deep-level defects at moderate temperatures (<300C). Hydrogen is known to readily diffuse in silicon resulting in the neutralization of shallow-acceptor and shallow-donor dopants, Controlled studies of the role of hydrogen in silicon has been recently reported. This was achieved by exposing silicon single crystals to monoatomic hydrogen or deuterium from a microwave gas discharge. To prevent the radiation damage that results from direct exposure to the plasma, the specimens were mounted on a hot stage that was located down stream from the plasma. Optical isolation was achieved with the use of baffles. The specimen temperature was held constant in the range of 100-400°C for time intervals between 10-120 minutes.

Deep Levels in Multilayer Structures of Si/Si0.8Ge0.2 Grown by Low-Pressure Chemical Vapor Deposition

2003 ◽  
Vol 799 ◽  
Author(s):  
Yutaka Tokuda ◽  
Kenichi Shirai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Deep Levels ◽  
Multilayer Structures ◽  
Pressure Chemical ◽  
Transient Spectroscopy ◽  
A Minor

ABSTRACTDeep levels in multilayer structures of ten periods Si/Si0.8Ge0.2 (16/5 nm) grown by low-pressure chemical vapor deposition have been characterized by deep level transient spectroscopy (DLTS). DLTS measurements reveal one dominant peak (E1) at around 130 K with a minor peak (E2) at around 240 K. The dominant trap E1 (Ec – 0.19 eV) is ascribed to the dislocation-related defect. The increase of the E1 concentration by a factor of 2 to 3 and the change of its energy level to Ec – 0.22 eV are observed with annealing up to 120°C. It is speculated that hydrogen incorporated during growth associates with E1 and the behavior of E1 upon annealing is caused by the release of hydrogen from E1.

Electrical Properties of the Multilayer Structures Based on Ultrathin Diamond-Like Carbon Films

1996 ◽  
Vol 452 ◽  
Author(s):  
V. I. Polyakov ◽  
P. I. Perov ◽  
N. M. Rossukanyi ◽  
A. I. Rukovishnikov ◽  
A. V. Khomich ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Cross Sections ◽  
Deep Level ◽  
Energy Levels ◽  
Differential Resistance ◽  
Carbon Films ◽  
Multilayer Structures ◽  
Transient Spectra ◽  
Trapping Centers

AbstractThe electrical characteristics of multilayer structures based on amorphous ultrathin diamondlike carbon films were investigated including dynamic and quasi-static current-voltage characteristics, capacitance-voltage characteristics, deep level transient spectra. The effect of illumination and temperature on these characteristics was also investigated. For the multilayer structures composed of lower band gap amorphous carbon layers separated with higher band gap ones, there were observed well-defined regions of negative differential resistance and sharp 20-fold changes in capacitance at definite voltages. Activation energies, capture cross sections, and locations of trapping centers were defined. The effects observed are discussed in terms of trap-assisted tunneling and, also, in terms of resonant tunneling between energy levels in superlattices and charge filling of the quantum wells and trapping centers.

scholarly journals Long-Wavelength Germanium Photodetectors by Ion Implantation

1990 ◽  
Vol 216 ◽  
Author(s):  
I.C. Wu ◽  
J.W. Beeman ◽  
P.N. Luke ◽  
W.L. Hansen ◽  
E.E. Haller
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Hopping Conduction ◽  
Fourier Transform Spectrometer ◽  
Donor Concentration ◽  
Long Wavelength ◽  
High Purity Germanium ◽  
Boron Ions ◽  
Dark Currents ◽  
Initial Results

ABSTRACTExtrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended longwavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3K under an operating bias of up to 70mV. Optimum peak responsivity and noise equivalent power(NEP) for these sensitive detectors are 0.9A/W and 5×10−16 W/Hz1/2 at 99μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed.

Ion Implantation and RTA in III-V Materials

1988 ◽  
Vol 126 ◽  
Author(s):  
B. G. Streetman ◽  
A. Dodabalapur
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Multilayer Structures ◽  
Group V ◽  
Protection Scheme ◽  
Selective Area ◽  
Quaternary Compounds ◽  
Short Annealing ◽  
Dopant Redistribution

ABSTRACTWe review the applications of ion implantation in several III-V materials, and rapid thermal annealing techniques to activate the implant and remove the crystalline damage. Ion implantation has become the preferred technique when selective area doping is necessary. It has been used successfully to fabricate n, n+, p, p+, and semi-insulating regions in III-V binary, ternary, and quaternary compounds, and multilayer structures. Ion implantation has also been used to produce layer mixing in multilayer structures, and superlattice disordering. The annealing step necessary to activate the implant and remove the crystalline damage is complicated by several factors such as incongruent evaporation of the group V element, layer mixing, and dopant redistribution. Rapid thermal annealing techniques, which typically employ anneal times between 1 second and 100 seconds, are generally more suitable than conventional furnace annealing. The short annealing times result in much less dopant redistribution, and reduced layer mixing in multilayer structures. Even for short annealing times, it is necessary to employ a protection scheme to suppress the loss of the group V element. Several such methods are discussed, including dielectric encapsulation, proximity techniques, and controlled ambient techniques.

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