scholarly journals Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

2013 ◽  
Vol 102 (7) ◽  
pp. 073501 ◽  
Author(s):  
Marco Silvestri ◽  
Michael J. Uren ◽  
Martin Kuball
Keyword(s):  
Energy Level ◽  
Cross Section ◽  
Electron Mobility ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Acceptor Center ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Level Acceptor

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

2015 ◽  
Vol 8 (10) ◽  
pp. 104101 ◽  
Author(s):  
Mulagumoottil Jesudas Anand ◽  
Geok Ing Ng ◽  
Subramaniam Arulkumaran ◽  
Binit Syamal ◽  
Xing Zhou
Keyword(s):  
Energy Level ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap Energy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
State Stress
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