Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks

1977 ◽  
Vol 31 (4) ◽  
pp. 301-304 ◽  
Author(s):  
W. T. Tsang ◽  
M. Ilegems
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multilayer Structures ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy

2019 ◽  
Vol 514 ◽  
pp. 124-129
Author(s):  
Yukun Zhao ◽  
Wenxian Yang ◽  
Shulong Lu ◽  
Yuanyuan Wu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
Silicon Substrates ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

2016 ◽  
Vol 119 (22) ◽  
pp. 224305 ◽  
Author(s):  
J. E. Kruse ◽  
L. Lymperakis ◽  
S. Eftychis ◽  
A. Adikimenakis ◽  
G. Doundoulakis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

2017 ◽  
Author(s):  
K. Zhang ◽  
V. Ray ◽  
P. Herrera-Fierro ◽  
J. R. Sink ◽  
F. Toor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy

2002 ◽  
Vol 243 (1) ◽  
pp. 129-133 ◽  
Author(s):  
Koji Kawasaki ◽  
Ikuo Nakamatsu ◽  
Hideki Hirayama ◽  
Kazuo Tsutsui ◽  
Yoshinobu Aoyagi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Ammonia Gas ◽  
Gas Source ◽  
Selective Area ◽  
Area Growth

New Damage-Less Patterning Method of A GaAs Oxide Mask and Its Application to Selective Growth by Mombe

1993 ◽  
Vol 334 ◽  
Author(s):  
Seikoh Yoshida ◽  
Masahiro Sasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Oxide Surface ◽  
Selective Area Growth ◽  
Desorption Temperature ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

AbstractA new damage-less patterning method of the photo-oxidized GaAs mask used for the selective-area growth of GaAs has been developed. We have found a new characteristic of the GaAs oxide: a metal Ga deposition onto the GaAs oxide surface lowers the desorption temperature of the oxide. The patterning method employed is based upon this characteristic. The GaAs oxide where 15 atomic layers (ALs) of Ga is deposited is locally removed at 540°C to form an opening area in the oxide mask. After forming this opening area, GaAs is selectively grown there by metal-organic molecular beam epitaxy (MOMBE).

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