scholarly journals Long-Wavelength Germanium Photodetectors by Ion Implantation

1990 ◽  
Vol 216 ◽  
Author(s):  
I.C. Wu ◽  
J.W. Beeman ◽  
P.N. Luke ◽  
W.L. Hansen ◽  
E.E. Haller
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Hopping Conduction ◽  
Fourier Transform Spectrometer ◽  
Donor Concentration ◽  
Long Wavelength ◽  
High Purity Germanium ◽  
Boron Ions ◽  
Dark Currents ◽  
Initial Results

ABSTRACTExtrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended longwavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3K under an operating bias of up to 70mV. Optimum peak responsivity and noise equivalent power(NEP) for these sensitive detectors are 0.9A/W and 5×10−16 W/Hz1/2 at 99μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed.

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Stabilisation of Hg1-xCdxTe:Hg1-yCdyTex ≠ y) Heterointerfaces and Applications in Infra Red Devices

1990 ◽  
Vol 216 ◽  
Author(s):  
Paul A. Clifton ◽  
Paul D. Brown
Keyword(s):  
Barrier Layer ◽  
Epitaxial Layers ◽  
Long Wavelength ◽  
Long Term Stability ◽  
Novel Approach ◽  
Infra Red ◽  
Passivation Layers ◽  
Cdte Buffer ◽  
Initial Results

ABSTRACTThe interface between Hg1-xCdxTe(0 ≦ x ≦ 1) and Hg1-yCdyTe(0 ≦ y ≦ 1) epitaxial layers of different composition (x ≠ y) is unstable with regard to the intermixing of the Hg and Cd cations within the Group II sublattice. This phenomenon may give rise to long-term stability problems in HgTe-(Hg,Cd)Te superlattices and composition grading between (Hg,Cd)Te absorber layers and CdTe buffer or passivation layers in epitaxial infra red detectors. In this paper, a novel approach to the inhibition of interdiffusion in these systems is discussed. This involves the growth of an intervening ZnTe barrier layer at the heterointerface between two (Hg,Cd)Te layers. Initial results are presented which indicate the effectiveness of this technique in reducing interdiffusion in an experimental heterostructure grown by MOVPE. Some possible applications in a variety of HgTe-based long wavelength devices are discussed.

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

1974 ◽  
Vol 15 (8) ◽  
pp. 1403-1408 ◽  
Author(s):  
M.S. Skolnick ◽  
L. Eaves ◽  
R.A. Stradling ◽  
J.C. Portal ◽  
S. Askenazy
Keyword(s):  
High Purity ◽  
Far Infrared

Imaging Fourier transform spectrometer with photoconductive detector arrays: an application to the AKARI far-infrared instrument

2008 ◽  
Author(s):  
Mitsunobu Kawada ◽  
Hidenori Takahashi ◽  
Noriko Murakami ◽  
Yoko Okada ◽  
Akiko Yasuda ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Far Infrared ◽  
Fourier Transform Spectrometer ◽  
Detector Arrays ◽  
Photoconductive Detector

Radiation damage in large-volume n- and p-type high-purity germanium detectors irradiated by 1.5 GeV protons

1995 ◽  
Vol 42 (4) ◽  
pp. 653-658 ◽  
Author(s):  
M. Koenen ◽  
J. Bruckner ◽  
M. Korfer ◽  
I. Taylor ◽  
H. Wanke
Keyword(s):  
Radiation Damage ◽  
Large Volume ◽  
High Purity ◽  
Germanium Detectors ◽  
High Purity Germanium ◽  
P Type
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