Misfit Dislocation Nucleation Sites and Metastability Enhancement of Selective Si1−xGex/Si Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 238 ◽  
Author(s):  
C. W. Liu ◽  
J. C. Sturm ◽  
P. V. Schwartz ◽  
E. A. Fitzgerald
Keyword(s):  
Chemical Vapor Deposition ◽  
Dislocation Density ◽  
Misfit Dislocation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Quantitative Model ◽  
Dislocation Nucleation ◽  
Selective Growth ◽  
Thermal Chemical Vapor Deposition ◽  
Nucleation Sites

ABSTRACTA quantitative model of the effect of the selective growth on dislocation density has been developed and compared to experiments. It is concluded that the dominant dislocation nucleation source in the selective areas occurs at the specific heterogeneous sites at edges of the selective areas. This edge nucleation can be controlled by adjusting the orientation of the sidewalls.

Position-selective growth of carbon nanotubes on Ni catalysts/Mo underlayers by thermal chemical vapor deposition

2006 ◽  
Vol 21 (11) ◽  
pp. 2888-2893 ◽  
Author(s):  
Hiroki Okuyama ◽  
Nobuyuki Iwata ◽  
Hiroshi Yamamoto
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Optimum Conditions ◽  
Ni Catalysts ◽  
Minimum Width ◽  
Thermal Chemical Vapor Deposition ◽  
Vertically Aligned

Position-selective growth of carbon nanotubes (CNTs) and vertically aligned CNTs (VACNTs) on patterned metal were prepared using thermal chemical vapor deposition (TCVD) and direct current (DC) plasma-enhanced chemical vapor deposition. We propose a new position-controlling method of CNTs by controlling not only the position of Ni as a catalyst, but also the morphology of Mo as an underlayer for the catalysts. Selective growth of CNTs was achieved at the edges of the patterned metal using TCVD. The minimum width of selectively grown CNTs, approximately 2.6 μm, was approximately one-eightieth that of the patterned metal, 200 μm. The VACNTs were synthesized using the PECVD method, but the VACNTs grew throughout the patterned metal. A position-controlled method of CNT growth was demonstrated in optimum conditions of the TCVD.

Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

1995 ◽  
Vol 403 ◽  
Author(s):  
V. Z-Q Li ◽  
M. R. Mirabedini ◽  
R. T. Kuehn ◽  
D. Gladden ◽  
D. Batchelor ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Grain Structure ◽  
Germanium Content ◽  
Thermal Chemical Vapor Deposition ◽  
Nucleation Sites

AbstractIn this work, polycrystalline SiGe has been viewed as an alternative gate material to polysilicon in single wafer processing for the deep submicrometer VLSI applications. We studied deposition of the silicon-germanium (SiGe) films with different germanium concentrations (up to 85%) on SiO2 in a rapid thermal chemical vapor deposition reactor using GeH4 and SiH4/H2 gas mixture with the temperature ranging from 550°C to 625°C. Since the SiGe RTCVD process is selective toward oxide and does not form nucleation sites on the oxide easily, an in-situ polysilicon flash technique is used to provide the necessary nucleation sites for the deposition of SiGe films with high germanium content. It was observed that with the in-situ polysilicon flash as a pre-nucleation seed, the SiGe deposited on SiO2 forms a continuous polycrystalline layer. Polycrystalline SiGe films of about 2000Å in thickness have a columnar grain structure with a grain size of approximately 1000Å. Compositional analyses from Auger Electron Spectroscopy (AES) and Rutherford backscattering (RBS) show that the high germanium incorporation in the SiGe films has a weak dependence on the deposition temperature. It is also noted that the germanium content across the film thickness is fairly constant which is a critical factor for the application of SiGe films as the gate material. Lastly, we found that the surface morphology of SiGe films become smoother at lower deposition temperature.

Two selective growth modes for graphene on a Cu substrate using thermal chemical vapor deposition

Carbon ◽  
2014 ◽  
Vol 68 ◽  
pp. 87-94 ◽  
Author(s):  
Wooseok Song ◽  
Cheolho Jeon ◽  
Soo Youn Kim ◽  
Yooseok Kim ◽  
Sung Hwan Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Cu Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Growth Modes

Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition

2004 ◽  
Vol 43 (2) ◽  
pp. 860-863 ◽  
Author(s):  
Takashi Ikuno ◽  
Mitsuhiro Katayama ◽  
Norihiro Yamauchi ◽  
Winadda Wongwiriyapan ◽  
Shin-ichi Honda ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Selective Growth ◽  
Thermal Chemical Vapor Deposition
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